A kind of manufacturing method of target material back plate with concave surface

Abstract

The invention discloses a manufacturing method of a target material back plate with a concave surface, comprising: annealing a flat blank: annealing the flat blank in a vacuum environment or an inert gas environment, the annealing temperature is 380°C to 860°C, and the annealing time is 0.4h to 4.1h, form an annealed flat blank; forging forming: under the same conditions as the annealing temperature in the above step, use a forging die with protrusions to forge the annealed flat blank for several times until the annealed flat blank has the same thickness as the forging die. After the concave surface that fits, stop forging to form a concave billet; annealing the concave billet: anneal the concave billet in a vacuum environment or an inert gas environment, the annealing temperature is not higher than the annealing temperature in the annealing step of the flat billet, and the annealing time is not less than The annealing time in the annealing step of the flat blank forms a target backing plate with a concave surface. The method for manufacturing a target backplane with a concave surface can manufacture a target backplane with good performance in a relatively simple and economical process.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and in particular, to a method for manufacturing a target backplane with a concave surface. Background technique [0002] Various types of sputtering thin film materials have been widely used in semiconductor integrated circuits (VLSI), optical discs, flat-panel displays, and surface coatings of workpieces. Since the 1990s, the development of sputtering targets and sputtering technology has The simultaneous development has greatly satisfied the needs of the development of various new electronic components. [0003] Sputtering is one of the main technologies for preparing thin film materials. The sputtering technology uses ions generated by an ion source to form a high-speed energy ion beam through accelerated aggregation in a vacuum. The ion beam bombards the surface of the target material. Due to the principle of momentum conversion , the atoms on the target are sputtered from the target...

AI Technical Summary

Problems solved by technology

[0005] In terms of conductivity, the better the conductivity, the better the sputtering stability, and the less abnormal circuit phenomena such as short circuit. Once the target short circuit occurs, it will instantly generate huge heat. The general aluminum alloy target has a low melting point. Under the action of short-circuit heat, local melting is easy to occur, forming melting holes and deformation

For the existing backplane, the conductivity of the oxygen-free copper material is generally around 51ms / m-55ms / m, and the conductivity of the aluminum alloy material is generally around 20ms / m. material damage

[0006] In addition, in terms of manufacturing technology, when manufacturing concave backplanes, machining is generally used to dig out material from solid blanks to form grooves. The removed material can account for 70% of the mass of the blank, and the material utilization rate is low.

For the expensive backplane material, this method is a serious waste, the cost is too high, and the processing time is long, and the tool loss is large

In other manufacturing processes, such as casting, the process conditions are complex, and it is difficult to manufacture a backplane with higher conductivity at a lower cost

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