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Quantum dot, modification method thereof and quantum dot light-emitting diode

A quantum dot luminescence and quantum dot technology, applied in the field of quantum dots, can solve the problems of low luminous efficiency of QLED, inability to be used in large-scale commercial applications, and reduced luminous efficiency of quantum dots, so as to reduce non-radiative transitions, reduce defect capabilities, and defect The effect of low energy level

Active Publication Date: 2021-07-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, at present, QLED still has problems such as low luminous efficiency and short lifespan, and it cannot be used in large-scale commercial applications for the time being.
Due to the small size of quantum dots, their specific surface area is very large, and there will be a lot of dangling bonds on the surface, and the dangling bonds exposed to the outside world can easily cause defects and defect energy levels, resulting in the loss of non-radiative transitions and lead to quantum Reduced spot luminous efficiency
Moreover, the dangling bond will also connect the organic ligands (such as organic carboxylic acid, organic phosphine, organic amines, etc.) The steric hindrance causes the quantum dots to be arranged at a larger interval after film formation, and the distance between quantum dots is wider, resulting in low charge transmission efficiency

Method used

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  • Quantum dot, modification method thereof and quantum dot light-emitting diode
  • Quantum dot, modification method thereof and quantum dot light-emitting diode
  • Quantum dot, modification method thereof and quantum dot light-emitting diode

Examples

Experimental program
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Effect test

Embodiment 1

[0058] This embodiment provides a kind of green core-shell type CdSe / ZnS quantum dots, comprising steps:

[0059] ①Dissolve the green core-shell CdSe / ZnS quantum dots in n-octane solvent to obtain a quantum dot solution with a concentration of 20mg / mL;

[0060] ②In an argon atmosphere, dissolve tetrakis(dimethylamino)titanium (TDMAT) into the quantum dot solution so that the concentration of tetrakis(dimethylamino)titanium (TDMAT) in the mixed solution is 2mg / mL, Stir for 30 minutes;

[0061] ③ After the reaction, precipitate and wash with ethyl acetate, ethanol, and acetone to prepare green core-shell CdSe / ZnS quantum dots.

Embodiment 2

[0063] This embodiment provides a kind of green core-shell type CdSe / ZnS quantum dots, comprising steps:

[0064] ①Dissolve the green core-shell CdSe / ZnS quantum dots in n-octane solvent to obtain a quantum dot solution with a concentration of 15mg / mL;

[0065] ②In an argon atmosphere, dissolve tetrakis(dimethylamino)titanium (TDMAT) into the quantum dot solution so that the concentration of tetrakis(dimethylamino)titanium (TDMAT) in the mixed solution is 2mg / mL, Stir for 30 minutes;

[0066] ③ After the reaction, precipitate and wash with ethyl acetate, ethanol, and acetone to prepare green core-shell CdSe / ZnS quantum dots.

Embodiment 3

[0068] The present embodiment provides a blue core-shell type CdSe / ZnS quantum dots, comprising steps:

[0069] ①Dissolve the green core-shell CdSe / ZnS quantum dots in n-octane solvent to obtain a quantum dot solution with a concentration of 30 mg / mL;

[0070] ②In an argon atmosphere, dissolve tetrakis(dimethylamino)titanium (TDMAT) into the quantum dot solution so that the concentration of tetrakis(dimethylamino)titanium (TDMAT) in the mixed solution is 3mg / mL, Stir for 30 minutes;

[0071] ③ After the reaction, precipitate and wash with ethyl acetate, ethanol, and acetone to obtain blue core-shell CdSe / ZnS quantum dots.

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Abstract

The invention belongs to the technical field of quantum dots, and particularly relates to a quantum dot, and the surface of the quantum dot is combined with a titanium-containing organic ligand. The surface of the quantum dot is combined with the titanium-containing organic ligand, so that the defect mode of the surface of the quantum dot and the defect capability of the quantum dot can be reduced, non-radiative transition can be reduced, the transmission efficiency of carriers in a quantum dot film layer can be improved, holes and electrons can permeate into the inner layer of a light-emitting layer more easily, and the light-emitting efficiency is further improved.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, and in particular relates to a quantum dot, a modification method thereof and a quantum dot light-emitting diode. Background technique [0002] Quantum dots refer to semiconductor nanomaterials in which excitons are bound in three-dimensional directions, and the particle size is generally 1-100nm. Due to the existence of the "quantum confinement" effect, as the size of quantum dots further decreases, the continuous energy band structure becomes a discontinuous discrete energy level structure, which can emit significant fluorescence after being excited. Quantum dots with different energy band widths can be obtained by adjusting the size of quantum dots. Quantum dots with different energy band widths will emit photons of different energies under excitation conditions of a certain wavelength, that is, light of different colors. Therefore, by adjusting the size and chemical composition of quan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88H01L51/50
CPCC09K11/025C09K11/883H10K50/115
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION