Crystal growth assembly, crystal growth apparatus and method

A technology of crystal growth and assembly, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of poor crystal quality and inconcentrated airflow, and achieve the effect of simple structure, uniform heating, and slow down carbonization

Active Publication Date: 2022-04-12
FUJIAN NORSTEL MATERIAL TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of silicon carbide crystal production, problems such as clockwise and counterclockwise flow directions of the growth atmosphere, or inconcentrated airflow often occur, resulting in poor quality of the produced crystals.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystal growth assembly, crystal growth apparatus and method
  • Crystal growth assembly, crystal growth apparatus and method
  • Crystal growth assembly, crystal growth apparatus and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0116] Embodiment 1. Using the thermal field structure of the raw material cylinder to grow a 4-inch N-doped 4H-SiC crystal, the crystal is a single crystal form 4H, and there are no macroscopic defects such as miscellaneous crystals and dense micropipes on the crystal surface, and the thickness of the crystal is measured in four directions , thickness difference -2 , BPD-2 , showing that using thermal field structure for crystal growth can effectively solve the problem of uneven crystal growth thickness without affecting the crystal defect density. The thickness difference is reduced from the original 3mm-10mm to <1mm, and the production capacity is increased by 50%-100%. .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of semiconductors, in particular to a crystal growth component, a crystal growth device and a method. The crystal growth assembly includes a blade adjustment ring, and the blade adjustment ring includes an outer ring body and a plurality of blade parts; the outer ring body is used to arrange along the height direction of the crucible; the blade parts extend along the height direction of the crucible, and the plurality of blade parts are arranged at regular intervals On the inner wall of the outer ring body, and the ends of the plurality of blades away from the outer ring body are enclosed to form a central channel. It can guide and adjust the production atmosphere, so as to ensure the stable and efficient growth of crystals.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a crystal growth component, a crystal growth device and a method. Background technique [0002] Semiconductor devices made of silicon carbide single crystal materials can meet today's demand for high-power and strong radiation devices, and growing high-quality SiC crystals is the basis for realizing the excellent performance of these SiC-based devices. [0003] SiC crystals can only be obtained by synthetic methods. At present, the method of silicon carbide single crystal often adopts the physical vapor transport method. However, problems such as clockwise and counterclockwise flow directions of the growth atmosphere, or inconcentrated airflow often occur during the production of silicon carbide crystals, resulting in poor quality of the produced crystals. Contents of the invention [0004] The objectives of the present invention include, for example, to provide a crys...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B29/36C30B23/00
Inventor 陈泽斌张洁廖弘基陈华荣
Owner FUJIAN NORSTEL MATERIAL TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap