Solar spectrum selective transmission coating and preparation method thereof
A solar spectrum and selective technology, applied in the field of spectrum coating, can solve the problems of affecting the performance of components, reducing the conversion efficiency of solar cells, etc., and achieve compact surface morphology, good thermal and chemical stability, and easy preparation process. Effect
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Embodiment 1
[0028] With GLASS / TiAlN / Ag / TiAlN / SiO 2 Selectively permeable coatings as an example. The preparation steps are as follows:
[0029] Step 1: Prepare the glass substrate; choose a borosilicate glass substrate with a thickness of 2mm.
[0030] Step 2: Prepare the dielectric layer TiAlN; use the ceramic target TiAlN (purity is 99.99%) radio frequency magnetron sputtering method, pre-evacuate the vacuum chamber to 2.0×10 -4 Pa, pass through Ar and N with a purity of 99.999% 2 As the sputtering gas, the flow rate was set to 20sccm and 3sccm respectively, and the sputtering pressure was adjusted to 6×10 -1Pa. Turn on the power supply of the TiAlN target, sputtering power is 400W, and the duration is 53min to prepare a 40nm TiAlN film;
[0031] Step 3: Prepare an ultra-thin metal Ag film; use a metal Ag target (purity of 99.99%) radio frequency magnetron sputtering method to pre-evacuate the vacuum chamber to 2.0×10 -4 Pa, and Ar with a purity of 99.999% was introduced as a sput...
Embodiment 2
[0036] GLASS / AlN / Al / AlN / Al / AlN / SiO 2 Selectively permeable coatings as an example. The preparation steps are as follows:
[0037] Step 1: Prepare the glass substrate; choose an ultra-clear glass substrate with a thickness of 2mm.
[0038] Step 2: Prepare the dielectric layer AlN; use the metal Al target (99.99% purity) radio frequency magnetron sputtering method to pre-evacuate the vacuum chamber to 2.0×10 -4 pa, pass through Ar and N with a purity of 99.999% 2 As the sputtering gas, the flow rate was set to 20sccm and 8sccm respectively, and the sputtering pressure was adjusted to 6×10 -1 Pa. Turn on the Al target, the sputtering power of the Al target is 300W, and the duration is 30min, to prepare a 35nm AlN film;
[0039] Step 3: Prepare an ultra-thin metal Al film; use a metal Al target (purity of 99.99%) radio frequency magnetron sputtering method to pre-evacuate the vacuum chamber to 2.0×10 -4 Pa, and Ar with a purity of 99.999% was introduced as a sputtering gas w...
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