Rare earth doped nano indium tin oxide infrared stealth coating

A nano-indium tin oxide and rare earth doping technology, which is applied in coatings, camouflage paints, radiation-absorbing paints, etc., can solve problems such as high density, difficult broadband absorption, and high infrared emissivity, and achieve improved corrosion resistance. The effect of simple process and low infrared emissivity

Active Publication Date: 2019-01-04
NANCHANG HANGKONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention aims at the shortcomings of existing infrared stealth materials such as high density, high infrared emissivity, and difficulty in broadband absorption. The invention discloses a preparation of a nano-indium tin oxide infrared stealth coating

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) Measure 10 mL InCl from the prepared solution 3 Solution (0.1mol / L), 0.9 mLSnCl 4 (0.1mol / L) solution and 0.8 mL ErCl 3 The solution (0.01mol / L) is placed in a three-necked flask, and then an appropriate amount of surface-active polyethylene glycol is added, mixed and stirred evenly.

[0022] (2) In a constant temperature water bath at a temperature of 50°C, add water slowly and uniformly while stirring to adjust the pH value to 8, forming a white precipitate.

[0023] (3) Continue stirring and aging for 1 hour to make the hydroxide precipitate completely. Before suction filtration and washing, the product is ultrasonically dispersed, then suction filtration, and washed with absolute ethanol until there is no chloride ion.

[0024] (4) Drying at 100°C for 2 hours, then calcining the hydroxide in a muffle furnace at 700°C for 1 hour, cooling and grinding naturally, to obtain rare earth doped nano indium tin oxide powder.

[0025] (5) Weigh 3 g of rare earth doped nano indium ...

Embodiment 2

[0032] (1) Measure 10 mL InCl from the prepared solution 3 Solution (0.1mol / L), 1 mL SnCl 4 Solution (0.1mol / L) and 0.8 mL ErCl 3 The solution (0.01mol / L) is placed in a three-necked flask, and then an appropriate amount of surface-active polyethylene glycol is added, and mixed and stirred evenly.

[0033] (2) In a constant temperature water bath at a temperature of 50°C, add water slowly and uniformly while stirring to adjust the pH value to 9, forming a white precipitate.

[0034] (3) Continue stirring and aging for 1 hour to make the hydroxide precipitate completely. Before suction filtration and washing, the product is ultrasonically dispersed, then suction filtration, and washed with absolute ethanol until there is no chloride ion.

[0035] (4) Drying at 100°C for 2 hours, then calcining the hydroxide in a muffle furnace at 750°C for 1 hour, cooling and grinding naturally, to obtain nano-indium tin oxide powder.

[0036] (5) Weigh 4 g of rare earth doped nano indium tin oxide into...

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Abstract

The invention relates to a rare earth doped nano indium tin oxide infrared stealth coating. SnCl4, InCl3 and ErCl3 are adopted at a molar ratio of 0.4-1.2:10:0.08-0.12, and rare earth doped nano indium tin oxide powder is prepared by a liquid phase chemical coprecipitation method. The rare earth doped nano indium tin oxide powder is modified by silane coupling agent KH570, and the amount of KH570is 4%-8% of the mass of the rare earth doped nano indium tin oxide powder; the modified rare earth doped indium tin oxide powder is dispersed in absolute ethanol at a ratio of 1 g/ml, mixed with polyurethane, and sprayed on an aluminum substrate to obtain the infrared stealth coating, and the mass ratio of the indium tin oxide to the polyurethane is 1-2:3. The preparation process is simple, and the infrared stealth coating has low density, low infrared reflectivity, high transparency and good physical, mechanical and chemical properties.

Description

Technical field [0001] The invention relates to a rare earth-doped nano indium tin oxide infrared stealth coating which relates to the shielding and absorption of infrared electromagnetic waves, and specifically belongs to the technical field of infrared stealth materials. Background technique [0002] With the development of science and technology, modern military technology has reached the level of "as long as the target is discovered, it can be destroyed." In order to improve the survivability and penetration capability of weapons and equipment, the simplest and most effective means is to use stealth technology. Stealth technologies developed based on different detection technologies mainly include visible light and near-infrared stealth, thermal infrared stealth, radar wave stealth, laser stealth, and artificial smoke stealth. In view of the current problems of infrared stealth: there are few high-efficiency, wide-band infrared absorbing materials, and it is difficult for in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D175/04C09D5/30C09D5/32
CPCC08K2201/011C09D5/30C09D5/32C09D175/04C08K9/06C08K3/22
Inventor 刘崇波张祥刘辉林马兴瑾张磊
Owner NANCHANG HANGKONG UNIVERSITY
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