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Preparation and application of bismuth vanadate/Vo-FeNiOOH composite photo-anode

A technology of compounding light and bismuth vanadate, applied in the field of photoelectrochemistry, can solve the problems of severe recombination of electrons and holes, loose coupling between semiconductor and electrocatalyst, thick electrocatalyst, etc., and achieve simple method, fast water oxidation kinetics, Effect of improving PEC performance

Inactive Publication Date: 2021-07-20
NORTHWEST NORMAL UNIVERSITY
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Problems solved by technology

Although many researchers now propose a series of schemes to suppress the recombination of electrons and holes, especially coupled electrocatalysts, electrocatalysts are coupled to semiconductors by electrodeposition, and the electrocatalysts made in this way are relatively thick, and the semiconductor and electrocatalyst The coupling between the catalysts is not tight, so that the recombination of electrons and holes is still very serious

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  • Preparation and application of bismuth vanadate/Vo-FeNiOOH composite photo-anode
  • Preparation and application of bismuth vanadate/Vo-FeNiOOH composite photo-anode
  • Preparation and application of bismuth vanadate/Vo-FeNiOOH composite photo-anode

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[0031]The method for preparing a bismuth vanadate / Vo-FeNiOOH composite photoanode of the present invention will be further described below through specific implementation methods.

[0032] (1) Preparation of BiVO 4 electrode

[0033] Preparation of BiVO on FTO substrates by a combination of electrodeposition and annealing 4 film. Weigh 3.32 g KI dissolved in 50 mL ultrapure water and stir to dissolve, then add HNO 3 Its pH was adjusted to 1.7. Subsequently, 0.97 g Bi(NO 3 ) 3 ·5H 2 O, stirred vigorously for 20 min to form a reddish-orange transparent solution. Weigh 0.4972 g of p-benzoquinone and dissolve it ultrasonically in 20 mL of ethanol to obtain the ethanol solution of p-benzoquinone. Add the ethanol solution of p-benzoquinone to the above-mentioned red-orange transparent solution, mix and stir for 30 min, and then use a three-electrode system for electrodeposition , with FTO as the working electrode, Ag / AgCl electrode as the reference electrode, and Pt sheet as...

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Abstract

The invention discloses a preparation method of a bismuth vanadate / Vo-FeNiOOH composite photo-anode, which comprises the following steps of: firstly, a BiVO4 electrode is prepared on FTO glass by adopting a method of combining electro-deposition and annealing treatment; then FeSO4. 7H2O and Ni (NO3) 2.6 H2O are used as electrolyte solutions, a photoelectric deposition method is adopted, a cocatalyst FeNiOOH is grown on the surface of BiVO4, and a BiVO4 / FeNiOOH photo-anode is prepared; and finally, sodium borohydride is used as a reducing agent, the BiVO4 / FeNiOOH photo-anode is soaked in a NaBH4 solution, oxygen vacancies are introduced into the surface of the BiVO4 / FeNiOOH photo-anode, and the BiVO4 / Vo-FeNiOOH composite photo-anode is obtained. According to the invention, an oxygen vacancy (Vo) is successfully manufactured in situ on a cocatalyst film FeNiOOH on the surface of BiVO4 by adopting a simple, convenient and economical NaBH4 reduction method, so that the service life of a BiVO4 carrier is prolonged, the transfer of interface charges and the recombination of surface charges are effectively inhibited, and the PEC performance is improved. Meanwhile, oxygen vacancies are introduced, so that more active sites are increased, and rapid water oxidation kinetics can be realized when the catalyst is used for photoelectrochemical decomposition of water.

Description

technical field [0001] The invention belongs to the field of photoelectrochemical technology, in particular to a BiVO 4 / Vo-FeNiOOH composite photoanode preparation and application. Background technique [0002] In recent years, energy and environmental crises have seriously restricted the rapid development of the global economy and people's pursuit of a better life. Photoelectrochemical (PEC) water splitting is a promising strategy for converting solar energy into clean energy, in which the apparent separation of photogenerated charges plays an important role. Bismuth vanadate (BiVO 4 ) have been considered as ideal photoanode materials due to their suitable bandgap, good band edge position, nontoxicity and good stability. However, the intrinsically short hole diffusion length and low carrier mobility lead to high charge recombination, which limits its performance. [0003] To overcome the aforementioned problems, various strategies have been employed, such as morpholog...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/091C25B1/04C25B1/55
CPCC25B1/04Y02P20/133Y02E60/36
Inventor 卢小泉张蓉芳何耀荣刘娟阮晴贾元琪焦小梅王妮白蕾韩振刚
Owner NORTHWEST NORMAL UNIVERSITY
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