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Tellurium semiconductor film, preparation method, preparation equipment and application thereof

A semiconductor and thin film technology, applied in the field of semiconductor thin films, can solve the problems of poor uniformity of Te thin films, long time-consuming vacuuming, high vacuum degree requirements, etc., and achieve the effect of regular shape, less time-consuming and high repeatability

Pending Publication Date: 2021-08-10
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the thermal evaporation method and the magnetron sputtering method have large equipment volume, complicated operation, and high vacuum requirements (pumping up to 10 - 3 Pa, the molecular pump needs to be started, and the vacuuming takes a long time), and the uniformity of the obtained Te film is poor

Method used

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  • Tellurium semiconductor film, preparation method, preparation equipment and application thereof
  • Tellurium semiconductor film, preparation method, preparation equipment and application thereof
  • Tellurium semiconductor film, preparation method, preparation equipment and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0073] Get 0.5g tellurium powder (99.999%, purchased from Aladdin), put it in a quartz crucible, and the quartz crucible is placed in the middle area of ​​the heating zone on the left side of the tube furnace (such as figure 1 and as figure 2 As shown), the glass substrate is placed on the slope of the graphite block (the slope is 75°), and then the graphite block is placed in the non-direct heating area of ​​the quartz tube (VTD tube) 6cm away from the heating area (the placement position will affect the temperature of the substrate Thus affecting the film quality).

[0074] Evaporation process: adjust the air pressure to 0.023torr, 0.23torr, and 2.3torr respectively, the evaporation temperature to 460°C, the heating rate to 20°C / min, the evaporation time to 8min, and natural cooling.

[0075] Surface Morphology Test of Te Films Prepared under Different Air Pressures

[0076] The surface morphology of the prepared tellurium semiconductor thin film is tested for light trans...

Embodiment 2

[0095] The difference from Example 1 is: the overall adjustment of the evaporation process in Example 1 is:

[0096] The air pressure is set to 0.23torr, the evaporation temperature is set to 460°C, the heating rate is 20°C / min, the evaporation time is adjusted to 4min, 6min, and 8min respectively, and natural cooling is performed.

[0097] Surface morphology test of Te films prepared at different times

[0098] The surface morphology of the prepared tellurium semiconductor film was tested for light transmission and opacity. The test results are as follows: Figure 6(a) , 6(b) , 6(c) shown.

[0099] Among them, 6(a) is the test result of the tellurium semiconductor thin film obtained after 0.23torr, 460°C evaporation for 4 minutes, the left picture is the test result of opacity, and the right picture is the test result of light transmission;

[0100] 6(b) is the test result of the tellurium semiconductor thin film obtained after 0.23torr, 460°C evaporation for 6 minutes, th...

Embodiment 3

[0114] Application in Infrared Detector

[0115] Structure (photoconductive structure): glass / Te film / Ag (silver paste electrodes are brushed on the Te film, and the Te film in this embodiment is the film corresponding to evaporation of 0.23torr in Example 1)

[0116] Measure its IT curve under the LED light source with wavelength of 530nm, 1450nm, and 1550nm (that is, the light response curve, light every 10s, and the test equipment is Agilent), as shown in Figure 9(a), Figure 9(b) and Figure 9 (c) as shown:

[0117] Depend on Figure 9(a) ~ Figure 9(c) It can be seen that the preliminary Te infrared detector device has good photoresponse at 530nm, 1450nm, and 1550nm.

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Abstract

The invention discloses a preparation method of a tellurium semiconductor film, the obtained tellurium semiconductor film, a related preparation instrument and application. The preparation method comprises the step of performing vapor transport deposition on a Te source to obtain the tellurium semiconductor film. The invention provides a preparation method of a tellurium semiconductor film. Compared with a thermal evaporation method and a magnetron sputtering method, a vapor transport deposition method has the advantages of simplicity and convenience in operation, simple equipment, low growth cost, real-time observation (flip design based on VTD equipment) and the like.

Description

technical field [0001] The application relates to a tellurium semiconductor thin film and its preparation method, equipment and application, belonging to the technical field of semiconductor thin films. Background technique [0002] The melting point of tellurium is 450°C, which can be grown at low temperature; the band gap is 0.33eV, and the absorption band edge is 3.75μm, which can be applied to infrared detection. The methods for growing tellurium thin films reported in the literature include thermal evaporation and magnetron sputtering. [0003] However, the thermal evaporation method and the magnetron sputtering method have large equipment volume, complicated operation, and high vacuum requirements (pumping up to 10 - 3 Pa, the molecular pump needs to be started, and the vacuuming takes a long time), and the uniformity of the obtained Te film is poor. Contents of the invention [0004] According to one aspect of the present application, in order to provide fast pre...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L29/18
CPCH01L21/02521H01L21/0262H01L21/02631H01L29/18
Inventor 唐江郑佳佳陈超付刘冲刘宇轩刘沛林刘婧陈龙高亮
Owner HUAZHONG UNIV OF SCI & TECH
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