Silicon carbide dynamic detection equipment

A technology of dynamic detection and detection equipment, applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problem of sample detection quantity limitation, achieve the effects of saving manpower, increasing testing speed, and improving testing efficiency

Active Publication Date: 2021-08-13
陕西开尔文测控技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although this equipment can change the original transistor tester from a low-efficiency detection of one sample to a continuous sample detection process, it still needs to rely on electrical components such as relays for the sample replacement process. When the number of electrical components is limited , the number of samples tested is also limited

Method used

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  • Silicon carbide dynamic detection equipment
  • Silicon carbide dynamic detection equipment
  • Silicon carbide dynamic detection equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A silicon carbide dynamic detection device, including a detection device body 1, the detection device body 1 is used to generate different currents, voltages, pulse signals, etc., for testing the electrical performance of a silicon carbide device 101, for example, the detection device body 1 can use The KEW6400 power device dynamic and static test all-in-one machine of our company (Shaanxi Kelvin Measurement and Control Technology Co., Ltd.) can also use the bronze sword pulse signal generator IGBT to test the SiC test power device PSG-06. The silicon carbide testing equipment in the prior art generally has wiring ports. By connecting different interface ports of the silicon carbide device 101 to different wiring ports of the testing equipment, the pulse signals generated by the testing equipment are transmitted to the testing silicon carbide device 101, and then tested The device is reflecting the test results according to the test situation. The present invention deve...

Embodiment 2

[0047] A silicon carbide dynamic detection device, the structure of which is basically the same as that of Embodiment 1, the difference is that this embodiment does not have a crash pad structure, and the sample transfer device 5 does not use mechanical claws, but adopts the following structure:

[0048] see Figure 2-6 , the sample transfer device 5 of the present embodiment includes an eccentric wheel 51, a non-eccentric transfer wheel 52, a conveyor belt 53, a sample holder 54, a sample unlocking member 55 and a rotating motor; the rotation shafts of the eccentric wheel 51 and the transfer wheel 52 are connected in The inner wall of the housing 3, or the rotation shafts of the eccentric wheel 51 and the transmission wheel 52 are connected to the column 31 provided in the housing 3, the sample storage box 4 and the sample collection box 6 are installed in the housing 3, and the controller is installed on the inner wall of the housing 3; The sample transfer device 5 is instal...

Embodiment 3

[0054] A kind of silicon carbide dynamic detection equipment, and the structure of embodiment 2 is basically the same, the difference is that see Figure 7-8 , in this embodiment, the sample holder 54 includes an insulating clamping arm 541 disposed on the conveyor belt 53, and each clamping arm 541 is provided with an inclined edge 5411 on a surface away from the silicon carbide device 101, and the inclined edge 5411 is semiconical in shape Or less than the shape of a semi-circular frustum, its side near the conveyor belt 53 is a plane, and does not contact the conveyor belt 53. Since the present invention is provided with the eccentric wheel 51, during its rotation and during the movement of the inclined edge 5411, the inclined edge 5411 is subjected to The slanted edge 5411 is blocked by the slanting rod 551 and moves away from the silicon carbide device 101. The more the moving distance, the greater the blocking force. The inclined edge 5411 is blocked by the slanting rod 5...

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Abstract

The invention belongs to the technical field of semiconductor detection equipment, and particularly relates to silicon carbide dynamic detection equipment which comprises a detection equipment main body and a sample introduction device, the sample introduction device comprises a vertical frame and a shell, a wire connected with a silicon carbide device port and a wiring port of the detection equipment main body is laid on the vertical frame, and the shell is connected with the silicon carbide device port. One end of the wire, which is used for being inserted into the port, adopts a conductive metal column; a penetrating port is formed in the top of the shell; and a sample storage box, a sample conveying device, a sample collection box and a controller are arranged in the shell, the sample conveying device is located between the conductive metal column and the sample storage box, and the sample conveying device is used for conveying a silicon carbide device to a proper position. The silicon carbide dynamic detection equipment develops a sample introduction device which is matched with silicon carbide detection equipment and can be used for continuous detection, all silicon carbide devices to be detected can be continuously tested, and compared with the traditional process of testing the devices one by one, the speed is greatly improved, and the manpower is saved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor testing equipment, and in particular relates to a silicon carbide dynamic testing equipment. Background technique [0002] Semiconductor devices such as IGBT, silicon carbide, etc. are used in many devices. The most common silicon carbide semiconductor device is a transistor. Silicon carbide transistors have high blocking voltage, reduced conduction voltage, short turn-off time and high temperature resistance. It has a very large advantage in the application of power electronic devices. In silicon carbide, SiC BJT has more unique advantages, such as close turn-off time to SiC MOSFET, and does not require complicated gate oxide process. Although SiC BJT has unique advantages, as a flow-controlled device, it needs a continuous base current supply when the device is working, which requires the stable performance of all functions of the device. [0003] In the existing technology, in order to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R1/04G01R1/02B65G47/84B65G17/12B65G17/32B65G59/02B65G65/32B65G23/22B65G43/00
CPCB65G17/123B65G17/32B65G23/22B65G43/00B65G47/842B65G59/026B65G65/32G01R1/02G01R1/0408G01R31/2601
Inventor 杜浩晨
Owner 陕西开尔文测控技术有限公司
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