Silicon carbide dynamic detection equipment

Abstract

The invention belongs to the technical field of semiconductor detection equipment, and particularly relates to silicon carbide dynamic detection equipment which comprises a detection equipment main body and a sample introduction device, the sample introduction device comprises a vertical frame and a shell, a wire connected with a silicon carbide device port and a wiring port of the detection equipment main body is laid on the vertical frame, and the shell is connected with the silicon carbide device port. One end of the wire, which is used for being inserted into the port, adopts a conductive metal column; a penetrating port is formed in the top of the shell; and a sample storage box, a sample conveying device, a sample collection box and a controller are arranged in the shell, the sample conveying device is located between the conductive metal column and the sample storage box, and the sample conveying device is used for conveying a silicon carbide device to a proper position. The silicon carbide dynamic detection equipment develops a sample introduction device which is matched with silicon carbide detection equipment and can be used for continuous detection, all silicon carbide devices to be detected can be continuously tested, and compared with the traditional process of testing the devices one by one, the speed is greatly improved, and the manpower is saved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor testing equipment, and in particular relates to a silicon carbide dynamic testing equipment. Background technique [0002] Semiconductor devices such as IGBT, silicon carbide, etc. are used in many devices. The most common silicon carbide semiconductor device is a transistor. Silicon carbide transistors have high blocking voltage, reduced conduction voltage, short turn-off time and high temperature resistance. It has a very large advantage in the application of power electronic devices. In silicon carbide, SiC BJT has more unique advantages, such as close turn-off time to SiC MOSFET, and does not require complicated gate oxide process. Although SiC BJT has unique advantages, as a flow-controlled device, it needs a continuous base current supply when the device is working, which requires the stable performance of all functions of the device. [0003] In the existing technology, in order to ...

AI Technical Summary

Problems solved by technology

However, although this equipment can change the original transistor tester from a low-efficiency detection of one sample to a continuous sample detection process, it still needs to rely on electrical components such as relays for the sample replacement process. When the number of electrical components is limited , the number of samples tested is also limited

Images