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Ferroelectric film capacitor and preparation method thereof

A ferroelectric film and capacitor technology, applied in the field of microelectronics, can solve the problems of low saturation polarization of ferroelectric film capacitors, low energy storage density and high residual polarization of ferroelectric film capacitors, and achieve high dielectric strength and high Discharge energy density, energy storage efficiency, and the effect of fast discharge speed

Pending Publication Date: 2021-08-17
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the lead-free ferroelectric material in the existing ferroelectric film capacitor has a single composition, which makes the ferroelectric film capacitor have lower saturation polarization or higher residual polarization, so that the energy storage density of the ferroelectric film capacitor is low

Method used

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  • Ferroelectric film capacitor and preparation method thereof
  • Ferroelectric film capacitor and preparation method thereof
  • Ferroelectric film capacitor and preparation method thereof

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Embodiment 1

[0054]This embodiment is a BFO-doped NBT-BT lead-free ferroelectric film capacitor (Pt / 0.89NBT-0.06BT-0.05BFO / (Pt / Ti / SiO 2 / Si)) preparation (eg figure 1 shown), the specific preparation steps are as follows:

[0055] 1. Configuration of the precursor solution of bismuth sodium titanate-barium titanate (NBT-BT) doped with bismuth ferrite (BFO): Weigh 0.02356g barium acetate ((CH3COO) 2 Ba), 0.5282g bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O), 0.1211g sodium acetate (CH 3 COONa·3H 2 O), 0.0404g iron nitrate (Fe(NO 3 ) 3 9H 2 0) be dissolved in the co-solvent of 8.7ml 2-methoxyethanol and acetic acid (both ratio is about 1:1), and fully dissolve, mix homogeneously under the operation of magnetic stirrer;

[0056] 2. Use a graduated cylinder to measure 0.65ml of tetrabutyl titanate (Ti(OC 4 h 9 ) 4 ) into 0.65ml of acetylacetone stable solution, then add 8.7ml of 2-methoxyethanol and acetic acid (ratio of about 1:1) co-solvent, and stir in a magnetic stirrer (400-500r / s) f...

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Abstract

The invention relates to the technical field of microelectronics, in particular to a ferroelectric film capacitor and a preparation method thereof. The ferroelectric film capacitor employs a lead-free and environment-friendly bismuth ferrite (BFO) doped sodium bismuth titanate-barium titanate (NBT-BT) film, thereby facilitating the recovery and reuse of the subsequent electronic devices. By using the film material, the ferroelectric film capacitor obtains high discharge energy density and energy storage efficiency, the energy storage performance of the ferroelectric film capacitor shows high-temperature stability, and the charge and discharge characteristics show that the film capacitor has faster microsecond discharge and larger dielectric strength; the film material is expected to become an environment-friendly lead-free material and can be applied to the energy storage capacitors.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a ferroelectric film capacitor and a preparation method thereof. Background technique [0002] In recent years, dielectric materials with high energy storage density have attracted extensive attention for their potential applications in capacitors for modern electronics and power systems. With the increasing demand for compact electronic products, capacitors with high energy storage density are widely used in electric vehicles, power inverters, mobile electronics, and various forms of pulsed power supply technology. Due to the requirement of low energy loss (i.e., high efficiency) and fast discharge time for pulsed power capacitors, their application is technically more challenging, so the application of high power capacitors in this class of materials has attracted much attention. Compared to polymer and electrolytic capacitors, ferroelectric film capacitors typically ...

Claims

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Application Information

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IPC IPC(8): H01G4/33H01G4/30
CPCH01G4/33H01G4/30
Inventor 唐振华姚帝杰李泽丽胡松程张莉唐新桂刘秋香
Owner GUANGDONG UNIV OF TECH
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