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Method for preparing (001) preferred orientation low-melting-point bismuth film by molecular beam epitaxy technology

A technology of molecular beam epitaxy and preferred orientation, which is applied in the field of molecular beam epitaxy to prepare low-melting bismuth metal thin films, achieving the effects of good flatness, low surface roughness and good repeatability

Pending Publication Date: 2021-08-31
SHENYANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem of controllable preferential orientation growth of existing low-melting point bismuth films, and to provide a method for preparing low-melting point preferred orientation bismuth films using molecular epitaxy technology

Method used

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  • Method for preparing (001) preferred orientation low-melting-point bismuth film by molecular beam epitaxy technology
  • Method for preparing (001) preferred orientation low-melting-point bismuth film by molecular beam epitaxy technology
  • Method for preparing (001) preferred orientation low-melting-point bismuth film by molecular beam epitaxy technology

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Experimental program
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Effect test

Embodiment 1

[0027] 1) Use a glass substrate as the substrate for preparing the bismuth film, put it in the processing chamber and transfer it to the growth chamber of the molecular beam epitaxy system;

[0028] 2) The growth chamber pressure is less than 5.0×10 -6 Pa starts to preheat the substrate;

[0029] 3) Adjust the temperature of the bismuth beam source furnace to 560°C and the substrate temperature to 70°C;

[0030] 4) Open the bismuth beam source furnace and the substrate shutter baffle, spray the bismuth beam onto the heated substrate, and deposit for 3 hours;

[0031] 5) Turn on the reflective high-energy electron diffractometer to observe the diffraction fringes of the film. The fringes are clear and sharp, indicating that the grown bismuth film is of good quality and the surface is smooth;

[0032] 6) Close the bismuth beam source furnace and the substrate shutter shutter, reduce the temperature of the bismuth beam source furnace and the substrate to room temperature, and o...

Embodiment 2

[0035] 1) Use the magnesium oxide substrate as the substrate for preparing the bismuth film, put it in the processing chamber and transfer it to the growth chamber of the molecular beam epitaxy system;

[0036] 2) The growth chamber pressure is less than 5.0×10 -6 Pa began to preheat the substrate, and turned on the reflection high-energy electron diffractometer to observe the substrate diffraction fringes;

[0037] 3) Adjust the temperature of the bismuth beam source furnace to 560°C and the substrate temperature to 70°C;

[0038] 4) Open the bismuth beam source furnace and the substrate shutter baffle, spray the bismuth beam onto the heated substrate, and deposit for 3 hours;

[0039] 5) Turn on the reflective high-energy electron diffractometer to observe the diffraction fringes of the film. The fringes are clear and sharp, indicating that the grown bismuth film is of good quality and the surface is smooth;

[0040] 6) Close the bismuth beam source furnace and the substra...

Embodiment 3

[0043] 1) Use the strontium titania substrate as the substrate for preparing the bismuth film, put it in the processing chamber and transfer it to the growth chamber of the molecular beam epitaxy system;

[0044] 2) The growth chamber pressure is less than 5.0×10 -6 Pa began to preheat the substrate, and turned on the reflection high-energy electron diffractometer to observe the substrate diffraction fringes;

[0045] 3) Adjust the temperature of the bismuth beam source furnace to 490°C and the substrate temperature to 30°C;

[0046] 4) Open the bismuth beam source furnace and the substrate shutter baffle, spray the bismuth beam onto the heated substrate, and deposit for 3 hours;

[0047] 5) Turn on the reflective high-energy electron diffractometer to observe the diffraction fringes of the film. The fringes are clear and sharp, indicating that the grown bismuth film is of good quality and the surface is smooth;

[0048] 6) Close the bismuth beam source furnace and the subst...

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Abstract

The invention provides a method for preparing a (001) preferred orientation low-melting-point metal bismuth film by a molecular beam epitaxy technology, and belongs to the technical field of film preparation. According to the method, high-purity metal bismuth is heated to a certain saturated vapor pressure, and a bismuth atom beam source is jetted onto a substrate to form a bismuth film with preferred orientation. The bismuth film prepared by the method has high (001) preferred orientation, small surface roughness, accurately controllable film thickness, strong hydrophobicity and excellent transport performance, the process cost is low, the repeatability is good, and large-scale industrial production can be realized.

Description

technical field [0001] The invention belongs to the technical field of film preparation, and in particular relates to a method for preparing a low-melting-point metal bismuth film by molecular beam epitaxy. Background technique [0002] The semimetal bismuth (Bi) has unique physical properties, and the carrier density is about 3×10 17 cm -3 、10 -3 m e The effective mass, 30nm mean free path, highly anisotropic Fermi surface, and small band overlap (38 meV) at low temperatures are among the most important research areas in condensed matter physics. There are many potential applications in modern industry, including superconducting devices, giant magnetoresistance devices, thermoelectric devices, etc. In addition, two-dimensional bismuth thin films are also the most promising candidates for low-temperature spin Hall devices. [0003] There are many methods for preparing bismuth thin films, such as molecular beam epitaxy, flash evaporation, electron beam evaporation, magne...

Claims

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Application Information

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IPC IPC(8): C30B29/02C30B23/02
CPCC30B29/02C30B23/025
Inventor 王楠祁阳
Owner SHENYANG UNIV
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