PVT method high-quality single crystal growth thermal field device and method

A high-quality, single-crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve problems such as poor single crystal quality and seed crystal damage, achieve good crystal quality, reduce the generation of impurities in the crystal, The effect of improving quality

Pending Publication Date: 2021-09-03
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Claims
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Problems solved by technology

[0006] The invention solves the problem that the current device and method for preparing single crystal by

Method used

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  • PVT method high-quality single crystal growth thermal field device and method

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Example Embodiment

[0028] DETAILED DESCRIPTION One: Combination figure 1 In the present embodiment, the present embodiment is a PVT method high mass single crystal growth thermal field device including graphite insulation material 2, a crucible body 3, a graphite barrel 5, a support structure 6, a guide cylinder 7, a seed bracket 9 The support graphite 10, the crucible cover 11 and the circular 12, the crucifer 3 is inverted, and the graphite barrel 5 is mounted in the crucible body 3 by the support structure 6, the crucible body 3 side wall, the bottom surface of the crucible body, the outer wall and support of the graphite barrel 5 A raw material placement region 4 is formed between the structure 6, and the feedstock is filled into the raw material placement region 4; the wafer 12 is fixedly mounted on the inner wall of the crucifer 3, and is located below the support structure 6, and the disc mounted in the circular tube 7 is sequentially mounted below the support structure 6. And the graphite ba...

Example Embodiment

[0029] DETAILED DESCRIPTION 2: Combination figure 1 In the present embodiment, the upper end and the lower end of the graphite insulation material 2 are opened in the upper end and the lower end of the graphite insulation material 2, respectively, and the upper end and the lower end of the graphite insulation material 2 can be measured in the process of preparing crystals. The temperature window 1 measures the temperature of the upper end and the lower end of the crucible in real time, avoids too high or too low affecting the quality of crystal growth.

Example Embodiment

[0030] Detailed Embodiment 3: Combination figure 1 In the present embodiment, the PVT method of the present embodiment is a single crystal growth thermal field device, the graphite barrel 5 is a loose porous structure, and the pore size of the loose porous structure is smaller than the diameter of the feed particles, the outer diameter of the graphite barrel 5. Within 30 to 150 mm, the surface pore diameter of the graphite tube 5 is smaller than the particle diameter of the feedstock, preventing the raw material from leaking from the graphite barrel 5 before forming the gas phase, and the graphite cylinder 5 can be based on the thickness of the crystal and how much corresponding to the material. the size of.

[0031] DETAILED DESCRIPTION 4: Combination figure 1 In the present embodiment, the PVT method of the present embodiment is a single crystal growth thermal field device, and the wall thickness of the conductor 7 is in the range of 3 to 6 mm, and the height of the guide cylind...

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Abstract

The invention discloses a PVT method high-quality single crystal growth thermal field device and method, and belongs to the technical field of single crystal preparation. The invention solves the problems that the existing device and method for preparing the single crystal by the PVT method are easy to cause seed crystal damage and the prepared single crystal is poor in quality. A crucible body is inverted, a graphite cylinder is installed in the crucible body through a supporting structure, a raw material containing area is formed among the side wall of the crucible body, the bottom face of the crucible body, the outer wall of the graphite cylinder and the supporting structure, and the raw material containing area is filled with raw materials; a wafer is fixedly installed on the inner wall of the crucible body and located below the supporting structure, a guide cylinder and a supporting graphite cylinder are sequentially installed below the wafer, a crucible cover and the crucible body are installed in a matched mode, a seed crystal support is installed in the crucible cover, seed crystals are arranged in the crucible body through the seed crystal support, and the outer wall of the crucible body and the outer wall of the crucible cover are wrapped with graphite heat preservation materials. The crystal prepared by the single crystal growth device and method is high in quality, and the seed crystal is not easy to damage during preparation of the crystal.

Description

technical field [0001] The invention relates to a thermal field device and method for growing a high-quality bulk single crystal by PVT method, and belongs to the technical field of single crystal preparation. Background technique [0002] The third-generation semiconductor materials represented by silicon carbide and aluminum nitride are considered to have very broad prospects in emerging industries such as rail transit, new energy vehicles, smart grids, and 5G communications, while physical vapor transport (PVT) is the mainstream The preparation process is based on the principle that the gas phase components are gradually deposited on the seed crystal to achieve crystal growth. However, at present, the seed crystal is often fixed above the crucible, and the seed crystal is fixed by bonding or designing a specific structure. At present, this preparation method has the following defects: [0003] 1. The way of bonding seed crystals is fixed at high temperature. Due to the d...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/36C30B29/40
CPCC30B23/00C30B29/36C30B29/403
Inventor 不公告发明人
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司
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