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10.3-10.9 mum high-strength anti-reflection film on ZnSe substrate and coating method

A 100L1010H901L10H933L10H, anti-reflection coating technology, applied in sputtering coating, vacuum evaporation coating, ion implantation coating and other directions, can solve the problems of high refractive index and scratches of zinc selenide material

Inactive Publication Date: 2021-09-03
河南平原光电有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large refractive index of zinc selenide material, and the soft material is easy to scratch

Method used

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  • 10.3-10.9 mum high-strength anti-reflection film on ZnSe substrate and coating method
  • 10.3-10.9 mum high-strength anti-reflection film on ZnSe substrate and coating method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The substrate is selected from the range of 10.3-10.9 μm, and the APS ion source is used in the ZnSe substrate in Znse base. On the substrate, a 100 nm thickness YBF3 layer is sequentially plated, 1010 nm thickness ZnS layer, 901 nm thickness YBF 3 Layer, 10 nm thickness ZnS layer, 933 nm thickness YBF 3 Layer, 10 nm thickness zns layer. The APS ion source control parameter is the deflection voltage Vb100 ~ 120V, the discharge current Id45 ~ 55mA, the control temperature is 18 ° C to 26 ° C, and the relative humidity is 30% ~ 70%, and the cleanliness is 10,000. ZnS evaporation rate is controlled between 0.6 nm / s, YBF 3 The evaporative rate was controlled between 0.3 nm / s to obtain 10.3-10.9 μm of the ZnSe substrate of the present invention.

[0035] The resulting ZnSe substrate 10.3-10.9 μm high-strength reduced reaction membrane was measured, and the average transmittance of the reduction of the membrane was 99.50%.

Embodiment 2

[0037] The substrate is selected from the range of 10.3-10.9 μm, and the APS ion source is used in the ZnSe substrate in Znse base. 100 nm thickness is plated in the substrate YBF 3 Layer, 1010 nm thickness ZnS layer, 901 nm thickness YBF 3 Layer, 10 nm thickness ZnS layer, 933 nm thickness YBF 3 Layer, 10 nm thickness zns layer. The APS ion source control parameter is the deflection voltage Vb100 ~ 120V, the discharge current Id45 ~ 55mA, the control temperature is 18 ° C to 26 ° C, and the relative humidity is 30% ~ 70%, and the cleanliness is 10,000. ZnS evaporation rate is controlled between 0.8 nm / s, YBF 3 The evaporative rate was controlled between 0.5 nm / s to obtain a high-strength reduction reaction of the ZNSE substrate of the present invention.

[0038] The obtained ZnSe substrate 10.3-10.9 μm high-strength reduction membrane was measured, and the average transmittance of the reduction of the membrane was 99.70%.

Embodiment 3

[0040]The substrate is selected from the range of 10.3-10.9 μm, and the APS ion source is used in the ZnSe substrate in Znse base. 100 nm thickness is plated in the substrate YBF 3 Layer, 1010 nm thickness ZnS layer, 901 nm thickness YBF 3 Layer, 10 nm thickness ZnS layer, 933 nm thickness YBF3 layer, 10 nm thickness ZnS layer. The APS ion source control parameter is the deflection voltage Vb100 ~ 120V, the discharge current Id45 ~ 55mA, the control temperature is 18 ° C to 26 ° C, and the relative humidity is 30% ~ 70%, and the cleanliness is 10,000. ZnS evaporation rate is controlled between 0.7 nm / s, YBF 3 The evaporation rate was controlled between 0.4 nm / s to obtain a high-strength reduction reaction of the ZnSe substrate of the present invention.

[0041] The resulting ZnSe substrate 10.3-10.9 μm high-strength reduction membrane was measured, and the average transmittance of the reduction of the membrane was 99.60%.

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Abstract

The invention relates to the technical field of infrared optical coating, and provides a 10.3-10.9 mum high-strength anti-reflection film on a ZnSe substrate. The structure of a film system is G / 100L1010H901L10H933L10H / A. The invention further provides a coating method of the 10.3-10.9 mum high-strength anti-reflection film on the ZnSe substrate. The APS ion source high-energy assistance and substrate heating film coating mode is adopted. The high-strength antireflection film has the beneficial effects that after the two surfaces of the ZnSe substrate are coated with the high-strength antireflection film, the average transmittance of 10.3-10.9 mum reaches 99% or above; and moreover, the requirements of abrasion resistance, constant damp heat, low temperature and salt spray environment tests in the JB / T 8226.1-1999 optical part coating standard are met.

Description

Technical field [0001] The present invention relates to the field of infrared optical coating, and more particularly to a ZnSe substrate 10.3-10.9 μm high strength reduction membrane, further involves a plating method of 10.3-10.9 μm high-strength reduction film in a ZnSe substrate. Background technique [0002] With the development of military infrared technologies, there are more and more applications in infrared optical systems, and an indispensable optical component in the infrared system such as airborne, carrier, and tank infrared imaging system needs. A substantial increase. The selenium selenium material is a yellow-transparent polycrystalline material with a crystalline particle size of about 70 μm, and the light transmitted range is 0.5 to 15 μm, and the scattering loss is extremely low in impurity absorption. Since the absorption of 10.6 μm wavelength light is small, the preferred material for making the optical device in the high power laser system is formed. Furtherm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B1/115C23C14/06C23C14/32
CPCG02B1/115C23C14/0629C23C14/0694C23C14/32
Inventor 张勇张涛郭浩宇陈俊霞王苗苗苏颖张恒华张成群白涛张金豹耿浩张树盛杨资阳
Owner 河南平原光电有限公司
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