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Gallium nitride power device structure and preparation method

A power device, gallium nitride technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems affecting device power density and power added efficiency performance, current collapse, etc.

Pending Publication Date: 2021-09-10
四川美阔电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The thermal analysis of GaN HEMTs devices, due to the increase of device channel temperature, will cause the current collapse effect, which shows that the saturated drain current decreases rapidly with the increase of drain bias on the device output characteristic curve, which seriously affects the device The power density and power added efficiency performance of the

Method used

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  • Gallium nitride power device structure and preparation method

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Effect test

Embodiment 1

[0034] A gallium nitride power device structure, comprising a substrate 101, an AlGaN barrier layer 103, and a gate dielectric layer 106, the upper surface of the substrate 101 is provided with a first microwell structure 201, and the first microwell structure 201 is parallel to Multiple groups are set; the upper surface of the AlGaN barrier layer 103 is provided with a second microwell structure 202, and multiple groups of the second microwell structure 202 are arranged in parallel, and the gate dielectric layer 106 is grown on the AlGaN barrier layer 103 , multiple groups of grooves are arranged parallel to the lower surface of the gate dielectric layer 106 and embedded with the second microwell structure 202 on the upper surface of the AlGaN barrier layer 103 .

Embodiment 2

[0036] This embodiment is further improved based on Embodiment 1, the substrate 101 is a Si substrate, the upper surface of the Si substrate 101 is etched to form the first microwell structure 201, and the first microwell structure 201 The cross section is an inverted trapezoid, and the angle of the hypotenuse of the inverted trapezoid is 54°; the etching solution for etching the upper surface of the Si substrate 101 is NaOH or KOH etching solution. ; Also includes a gate 107, the gate 107 is located on the gate dielectric layer 106, the contact type between the gate 107 and the gate dielectric layer 106 is set as a Schottky contact; also includes a source 104, Drain 105, GaN buffer layer 102, the GaN buffer layer 102 is located on the substrate 101, the source 104 and the drain 105 are located on the GaN buffer layer 102 and the AlGaN barrier layer 103 and gate The dielectric layer 106 is located between the source electrode 104 and the drain electrode 105, and the contact ty...

Embodiment 3

[0046] The difference between this embodiment and Embodiment 2 is that the substrate is a non-Si substrate 101, and this embodiment uses a GaN substrate, and the upper surface of the substrate 101 is etched to form the first microwell structure 201, The cross section of the first microwell structure 201 is rectangular.

[0047] In this embodiment, a GaN substrate is used to etch and form multiple sets of parallel rectangular micro-well structures on the substrate surface, so that the heat dissipation area of ​​the interface between the GaN buffer layer and the substrate can be increased to achieve a good heat dissipation effect.

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Abstract

The invention discloses a gallium nitride power device structure and a preparation method and aims to solve the problems that the temperature of a device is easy to rise, and a current collapse phenomenon is easy to occur in the prior art. The device comprises a substrate, an AlGaN barrier layer and a gate dielectric layer, the upper surface of the substrate is provided with a plurality of groups of first micro-well structures, and the first micro-well structures are arranged in parallel; a plurality of groups of second micro-well structures are arranged on the upper surface of the AlGaN barrier layer in parallel; the gate dielectric layer grows on the AlGaN barrier layer, a plurality of groups of grooves are formed in the lower surface of the gate dielectric layer in parallel, and the second micro-well structures on the upper surface of the AlGaN barrier layer are embedded into the grooves; the substrate is a Si substrate, the upper surface of the Si substrate is etched to form the first micro-well structures, the cross section of each first micro-well structure is in an inverted trapezoid shape, and the inclined edge angle of the inverted trapezoid is 54 degrees. The device has a good heat dissipation effect and improves the current collapse phenomenon.

Description

technical field [0001] The invention relates to the technical field of semiconductor microelectronics, in particular to a structure and a preparation method of a gallium nitride power device. Background technique [0002] GaN materials have good thermal and electrical properties, good chemical stability, high thermal conductivity, corrosion resistance and radiation resistance, and are widely used as ideal materials for high temperature, high pressure, high frequency and high power devices. [0003] The thermal analysis of GaN HEMTs devices, due to the increase of device channel temperature, will cause the current collapse effect, which shows that the saturated drain current decreases rapidly with the increase of drain bias on the device output characteristic curve, which seriously affects the device Power density and power added efficiency performance. Contents of the invention [0004] The technical problem to be solved by the invention is: in the prior art, the temperat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L23/367H01L23/373H01L29/417H01L29/423H01L29/45H01L29/47H01L29/778H01L21/28H01L21/335
CPCH01L29/7787H01L29/66462H01L29/0684H01L29/401H01L29/42356H01L29/41725H01L29/452H01L29/475H01L23/367H01L23/3732H01L23/3738
Inventor 叶荣辉黄进文李俊峰蔡文钦
Owner 四川美阔电子科技有限公司
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