Unlock instant, AI-driven research and patent intelligence for your innovation.

A method for deselenium from tellurium ingot

A high-purity tellurium, stage-controlled technology, applied in the field of deselenium from tellurium ingots, can solve the problems of low deselenium efficiency, large amount of waste liquid, high operation difficulty coefficient, etc., and achieve high deselenium efficiency and small loss of tellurium , good environmental benefits

Active Publication Date: 2022-05-20
CENT SOUTH UNIV
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Selenium and tellurium belong to the same main group with similar properties, and selenium is an associated element of tellurium, so 4N tellurium materials often contain high impurity element selenium, reaching tens or even tens of ppm, because the physical and chemical properties of the two have great differences Similarity, it is difficult to directly reduce selenium to a lower level by general chemical or physical purification methods, which limits the development of tellurium purification technology
[0003] Conventional tellurium ingot deselenization methods mainly include vacuum distillation, regional smelting, chemical purification, etc. In the production process of regional smelting, the smelting temperature is high, energy consumption is high, the number of cycles is high, the production cycle is long, and the efficiency is low, and Selenium is difficult to separate and deselenium is not complete; although selenium is easier to volatilize into the gas phase than tellurium by vacuum distillation, the method of vacuum distillation cannot effectively remove selenium in tellurium, deselenium is unstable and incomplete, and the deselenium efficiency Low; it is difficult to purify tellurium to 5N by pure chemical method, and it is even more difficult to reduce the content of selenium to less than 10ppm, which needs to be realized in combination with other physical methods
[0004] Chinese patent CN107585745A discloses a preparation method of 5N tellurium. This technology needs to pre-treat tellurium to meet the national standard 4N standard before production, reduce the content of some impurities in the raw material through screening or pre-treatment, and then carry out vacuum distillation purification. The treatment effect of selenium is not good, the treatment cycle is long, the deselenium efficiency is low, and the deselenium is not complete
Chinese patent CN110894065A discloses an equipment and method for preparing high-purity tellurium. The method is used to produce 6N high-purity tellurium. The technology includes a vacuum distillation device, a vacuum device, a hydrogen purification cycle device, a high-frequency induction heating device and product collection. Devices, etc. The combination of technical equipment is complex, and the operation difficulty coefficient is relatively high, which is not conducive to industrial production
This technical solution has a long selenium removal period and incomplete removal
Chinese patent CN106517106A discloses a high-efficiency purification method for high-purity tellurium. This invention firstly purifies tellurium to 3N-4N refined tellurium by chemical method, and then melts the obtained refined tellurium at 400-700°C in a hydrogen atmosphere. , using the Czochralski purification method to obtain 5N-6N tellurium, because tellurium has certain non-metallic properties, and the crystallization properties of tellurium are not good, so the effect of removing impurities in the pulling process is general, and the properties of selenium and tellurium are similar. The effect of deselination is poor, and the amount of waste liquid is large

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for deselenium from tellurium ingot
  • A method for deselenium from tellurium ingot
  • A method for deselenium from tellurium ingot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A method for deselenium from tellurium ingot of the present invention, comprises the following steps:

[0045] (1) Put 4 kg of crude tellurium raw material with a purity of 4N (the test results of the raw material are shown in Table 1) into a clean graphite boat, and put the loaded graphite boat into the constant temperature area of ​​the melting equipment, before turning on the electromagnetic induction heater , first pass 15min H 2 , using a gas flowmeter to control the flow rate to 0.24m 3 / h, fully drive out the air in the equipment; continuous ventilation to create a reducing atmosphere, maintain a reducing pressure of 300Pa in the constant temperature zone of the melting equipment, so that the tellurium ingots are in a reducing atmosphere during the whole heating process. The heating time is set to 1.5h, and the temperature reaches 500°C, so that the tellurium material is fully and evenly heated. At the same time, the stirring effect of electromagnetic induction ...

Embodiment 2

[0066] A method for deselenium from tellurium ingot of the present invention, comprises the following steps:

[0067] (1) Put 4 kg of crude tellurium raw material with a purity of 4N (the test results of the raw material are shown in Table 5) into a clean graphite boat, and put the loaded graphite boat into the constant temperature area of ​​the melting device. Before turning on the electromagnetic induction heater, pass H for 15 minutes 2 , using a gas flowmeter to control the flow rate to 0.24m 3 / h, fully drive out the air in the equipment; continuous ventilation to create a reducing atmosphere, maintain a reducing pressure of 100Pa in the constant temperature zone of the melting equipment, so that the tellurium ingots are in a reducing atmosphere during the whole heating process. Set the heating time to 1.5h, and the temperature reaches 500°C, so that the tellurium material is fully and evenly heated.

[0068] (2) Adopt three-stage precise temperature control method for ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for deselenizing tellurium ingots, which comprises the following steps: (1) heating and melting the tellurium ingots in a hydrogen atmosphere and controlling the temperature of the tellurium melts for deselenization; wherein, the temperature control process includes the following three steps: Two stages: i) the first stage controls the temperature at 500-520°C; ii) the second stage controls the temperature at 530-550°C; iii) the third stage controls the temperature at 560-600°C; (2) cooling process: keep hydrogen atmosphere, lowering the temperature to obtain high-purity tellurium material. The present invention uses a three-stage precise temperature control method to deselenize tellurium ingots, the deselenium process is effectively controlled, the deselenium efficiency is high, the cycle is short, the deselenium is thorough, and the loss of tellurium is small, so that Pb, Impurities such as Bi, Na, and Si can be reduced to less than 1ppm, impurities such as Cu, Mg, and As can be reduced to less than 0.5ppm, and difficult-to-remove impurities such as selenium can be reduced to less than 2ppm. The prepared 5N tellurium ingot can be used for solar energy Batteries, LEDs, thermoelectrics, infrared and other semiconductor materials.

Description

technical field [0001] The invention belongs to the field of tellurium ingot purification, in particular to a method for deselenium from tellurium ingot. Background technique [0002] Tellurium is an oxygen group element with an atomic number of 52. It is located between selenium and polonium in the main group VI of the fifth cycle, and has obvious metallic properties. The main impurity elements in tellurium ingots are Se, Pb, As, Na, Mg, Bi, Cu, etc., among which the most difficult element to remove is Se. Selenium and tellurium belong to the same main group with similar properties, and selenium is an associated element of tellurium, so 4N tellurium materials often contain high impurity element selenium, reaching tens or even tens of ppm, because the physical and chemical properties of the two have great differences Similarly, it is difficult to directly reduce selenium to a lower level by general chemical or physical purification methods, which limits the development of t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/02
CPCC01B19/02Y02P10/20
Inventor 许志鹏何志强田庆华郭学益李栋
Owner CENT SOUTH UNIV