Polycrystalline YAG ceramic chemical mechanical polishing solution

A ceramic chemical and mechanical polishing technology, applied in polishing compositions containing abrasives, etc., can solve the problems of undiscovered polishing liquid system, difference in crystalline phase reaction rate, unsuitability of polycrystalline YAG, etc., to achieve high material removal efficiency, The effect of suppressing grain boundary height difference and improving removal efficiency

Active Publication Date: 2021-10-08
DALIAN UNIV OF TECH +1
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Patent (CN 109913133 A), patent (CN 103059738 A) and patent (CN 109913133 A) disclose YAG polishing fluids under several different acidic systems, which have a certain effect on the preparation of single crystal YAG, but due to polycrystalline YAG crys

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polycrystalline YAG ceramic chemical mechanical polishing solution
  • Polycrystalline YAG ceramic chemical mechanical polishing solution
  • Polycrystalline YAG ceramic chemical mechanical polishing solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Based on the total mass fraction of the polishing liquid as 100%, its components and mass percentages are as follows: 10wt% 20nm silica sol, 1wt% 20nm alumina abrasive grains, 0.5wt% hexadecyltrimethylammonium bromide, 88.5wt %Deionized water.

[0029] The polycrystalline YAG ceramic chemical mechanical polishing liquid described in the present embodiment is prepared by the following steps:

[0030] Rinse the beaker with deionized water and dry it with nitrogen gas;

[0031] Add 88.5wt% deionized water to the cleaned beaker;

[0032] Add 10wt% 20nm silica sol to the above deionized water and stir until uniform;

[0033] Add pH regulator citric acid to adjust the pH of the solution to 7;

[0034] Add 1wt% of 20nm alumina abrasive grains and ultrasonically stir for 10min;

[0035] Add 0.5wt% cetyltrimethylammonium bromide and stir;

[0036] The above mixed liquid was placed in a water bath and sonicated for 30 minutes and stirred until uniformly mixed.

[0037] A po...

Embodiment 2

[0039] Based on the total mass fraction of the polishing liquid as 100%, its components and mass percentages are as follows: 20wt% 20nm silica sol, 3wt% 1μm alumina abrasive grains, 0.3wt% fatty acid polyethylene glycol ester, 76.7wt% deionized water .

[0040] The polycrystalline YAG ceramic chemical mechanical polishing liquid described in the present embodiment is prepared by the following steps:

[0041] Rinse the beaker with deionized water and dry it with nitrogen gas;

[0042] Add 76.7wt% deionized water to the cleaned beaker;

[0043] Add 20wt% 20nm silica sol to the above deionized water and stir until uniform;

[0044] Add pH regulator citric acid to adjust pH to 7;

[0045] Add 3wt% of 1μm alumina abrasive grains and ultrasonically stir for 10min;

[0046] Add 0.3wt% fatty acid polyethylene glycol ester;

[0047] The above mixed liquid was placed in a water bath and sonicated for 30 minutes and stirred until uniformly mixed.

[0048] A polishing experiment was c...

Embodiment 3

[0050] Based on the total mass fraction of the polishing liquid as 100%, its components and mass percentages are as follows: 30wt% 50nm silica sol, 5wt% 1 μm alumina abrasive grains, 0.1wt% cetyltrimethylammonium bromide and stirring, 64.9 wt% deionized water.

[0051] Appropriate amount of pH adjuster, each material is mixed uniformly by ultrasonic in deionized water.

[0052] The polycrystalline YAG ceramic chemical mechanical polishing liquid described in the present embodiment is prepared by the following steps:

[0053] Rinse the beaker with deionized water and dry it with nitrogen gas;

[0054] Add 64.9wt% deionized water to the cleaned beaker;

[0055] Add 30wt% 50nm silica sol to the above deionized water and stir until uniform;

[0056] Add pH regulator citric acid to adjust pH to 7;

[0057] Add 5wt% of 1μm alumina abrasive grains and ultrasonically stir for 10min;

[0058] Add 0.1wt% cetyltrimethylammonium bromide and stir;

[0059] The above mixed liquid was ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a polycrystalline YAG (yttrium aluminum garnet) ceramic chemical mechanical polishing solution, and belongs to the technical field of precision/ultra-precision machining. The pH value of the polycrystalline YAG ceramic chemical mechanical polishing solution is 7, and the polycrystalline YAG ceramic chemical mechanical polishing solution comprises a solute and a solvent, wherein the solvent is deionized water. The polishing solution comprises the following components in percentage by mass: 10-30wt% of silica sol, 1-5wt% of aluminum oxide abrasive particles, 0.1-0.5 wt% of an abrasive particle dispersing agent and a proper amount of a pH (Potential of Hydrogen) regulator according to the total mass fraction of 100%, and all the substances are uniformly mixed in deionized water through ultrasonic waves. By adopting the polishing solution, the ultra-smooth polishing of the polycrystalline YAG ceramic can be realized, the grain boundary height difference of the polished polycrystalline YAG crystal surface is obviously reduced, and the ultra-smooth and damage-free polycrystalline YAG crystal surface can be obtained; the grain boundary height difference can be effectively inhibited, and the purpose of super-smooth surface is achieved; and in addition, by adopting the polishing solution provided by the invention, the material removal efficiency is high, and compared with a polishing solution only containing silica sol or aluminum oxide, the removal efficiency is obviously improved.

Description

technical field [0001] The invention belongs to the technical field of precision / ultra-precision machining, and relates to a polishing liquid for chemical mechanical polishing of polycrystalline YAG ceramics. Background technique [0002] Compared with single crystal materials, polycrystalline yttrium aluminum garnet (YAG) has the advantages of controllable shape and size and controllable doping concentration, so it has great potential in laser manufacturing. In order to obtain a high-quality laser with a high output threshold, the crystal surface must be ultra-smooth and free from surface damage after ultra-precision machining. However, there are still many problems in the process of preparing YAG ceramics with high surface quality. On the one hand, YAG crystals are highly wear-resistant and hard-brittle, so they are usually susceptible to mechanical damage during growth and processing. In addition, they can also fail due to crack propagation if the thermal stress is exce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 郭江张鹏飞潘博司立坤
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap