A chemical mechanical polishing fluid for polycrystalline YAG ceramics
A ceramic chemical and mechanical polishing technology, applied in polishing compositions containing abrasives, etc., can solve the problems of crystal phase reaction rate difference, polycrystalline YAG is not suitable, and the polishing liquid system has not yet been found, so as to suppress the grain boundary height difference. , The effect of high material removal efficiency and improved removal efficiency
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Embodiment 1
[0028] Based on 100% of the total mass fraction of the polishing liquid, its components and mass percentages are as follows: 10wt% 20nm silica sol, 1wt% 20nm alumina abrasive grains, 0.5wt% cetyltrimethylammonium bromide, 88.5wt% %Deionized water.
[0029] The polycrystalline YAG ceramic chemical mechanical polishing liquid described in this embodiment is prepared by the following steps:
[0030] Rinse the beaker with deionized water and blow dry with nitrogen;
[0031] Add 88.5wt% deionized water to the cleaned beaker;
[0032] Add 10wt% 20nm silica sol to the above deionized water and initially stir until uniform;
[0033] Add pH adjuster citric acid to adjust the pH of the solution to 7;
[0034] Add 1wt% of 20nm alumina abrasive grains and perform ultrasonic stirring for 10min;
[0035] Add 0.5wt% cetyltrimethylammonium bromide and stir;
[0036] The above mixed liquid was placed in a water bath and sonicated for 30 minutes and stirred until uniformly mixed.
[0037]...
Embodiment 2
[0039] Based on 100% of the total mass fraction of the polishing liquid, its components and mass percentages are as follows: 20wt% 20nm silica sol, 3wt% 1μm alumina abrasive particles, 0.3wt% fatty acid polyethylene glycol ester, 76.7wt% deionized water .
[0040] The polycrystalline YAG ceramic chemical mechanical polishing liquid described in this embodiment is prepared by the following steps:
[0041] Rinse the beaker with deionized water and blow dry with nitrogen;
[0042] Add 76.7wt% deionized water to the cleaned beaker;
[0043] Add 20wt% 20nm silica sol to the above deionized water and initially stir until uniform;
[0044] Add pH adjuster citric acid to adjust pH to 7;
[0045] Add 3wt% of 1μm alumina abrasive grains and perform ultrasonic stirring for 10min;
[0046] Add 0.3wt% fatty acid polyethylene glycol ester;
[0047] The above mixed liquid was placed in a water bath and sonicated for 30 minutes and stirred until uniformly mixed.
[0048] The polishing exp...
Embodiment 3
[0050] Based on 100% of the total mass fraction of the polishing liquid, its components and mass percentages are as follows: 30wt% 50nm silica sol, 5wt% 1μm alumina abrasive grains, 0.1wt% cetyltrimethylammonium bromide and stir, 64.9 wt% deionized water.
[0051] Appropriate amount of pH adjuster, each substance is uniformly mixed by ultrasonic in deionized water.
[0052] The polycrystalline YAG ceramic chemical mechanical polishing liquid described in this embodiment is prepared by the following steps:
[0053] Rinse the beaker with deionized water and blow dry with nitrogen;
[0054] Add 64.9wt% deionized water to the cleaned beaker;
[0055] Add 30wt% 50nm silica sol to the above deionized water and initially stir until uniform;
[0056] Add pH adjuster citric acid to adjust pH to 7;
[0057] Add 5wt% of 1μm alumina abrasive grains and perform ultrasonic stirring for 10min;
[0058] Add 0.1wt% cetyltrimethylammonium bromide and stir;
[0059] The above mixed liquid ...
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