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Sub-wavelength grating and vertical cavity surface emitting laser

A vertical cavity surface emission and sub-wavelength grating technology, applied in the field of optoelectronics, can solve the problems of large-aperture HCGVCSEL electric current injection difficulties, affecting device reliability and beam quality, and small current extension distance, so as to improve reliability and beam quality , Improve the uniformity of current distribution and improve the effect of large aperture

Pending Publication Date: 2021-10-08
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] However, the materials currently used to make subwavelength gratings for VCSELs usually include insulating oxide materials, all-dielectric materials, air-plus-semiconductor / dielectric materials, or all-semiconductor materials. These materials have excellent optical properties but extremely poor electrical conductivity. It leads to problems such as high power, large-diameter HCG VCSEL current injection difficulties, small current extension distance, and uneven current distribution, which seriously affects the reliability and beam quality of HCG VCSEL devices

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[0046] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0047] Descriptions of structural embodiments and methods of the invention are disclosed herein. It should be understood that there is no intention to limit the invention to the particular disclosed embodiments, and that the invention can be practiced using other features, elements, methods and embodiments. Similar elements in different embodiments are generally labeled with similar numbers.

[0048] An embodiment of the present invention proposes a sub-wavelength grating,

[0049] figure 1 Schematically shows that the sub-wavelength grating in the present invention includes: a base layer 2 formed of indium tin oxide; Twice lower than the indium tin oxide.

[0050] In the embodiment of the present invention, the mater...

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Abstract

The invention discloses a sub-wavelength grating and a vertical cavity surface emitting laser. The sub-wavelength grating comprises a substrate layer (2) formed by indium tin oxide; and a grating layer (1) formed by amorphous silicon or aluminum gallium arsenide, wherein the grating layer is formed on the substrate layer (2). The sub-wavelength grating based on the substrate layer (2) formed by indium tin oxide serves as a P-surface reflecting mirror. The vertical cavity surface emitting laser comprises a light emitting device, and the sub-wavelength grating disposed on a P-type doped layer (4) of the light emitting device, wherein the light-emitting device comprises a substrate (8), an N-type doping layer (7) and a supporting table (10) which are sequentially stacked from bottom to top, and a lower electrode (9) is arranged on the bottom surface of the substrate.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a sub-wavelength grating and a vertical cavity surface emitting laser. Background technique [0002] The traditional VCSEL device (Vertical Cavity Surface Emitting Laser) uses a distributed Bragg reflector (DBR) as a highly reflective mirror structure. However, the DBR has a large thickness, poor conductivity and serious heat generation. In recent years, the technology of VCSEL using high-contrast subwavelength grating (HCG) as a high reflection mirror has been developed, which has broad application scenarios in the fields of optical communication, medical imaging and three-dimensional sensing. [0003] A sub-wavelength grating is a periodic grating layer whose grating period is smaller than the wavelength of light, and the contrast between the refractive index of the grating and the refractive index of the filling medium is relatively large. Through structural design, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/065
CPCH01S5/18302H01S5/18361H01S5/065
Inventor 戚宇轩李伟刘素平马骁宇
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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