30results about How to "Improve the uniformity of current distribution" patented technology

The invention provides a light emitting diode (LED) and a flip-chip light emitting diode package. The LED includes a substrate, a first-type doped layer, a light emitting layer, a second-type doped layer, a plurality of first grooves, a second groove, an insulation layer, a first contact, and a second contact. The LED is characterized in that the second groove is connected to one end of each first groove and penetrates the second-type doped layer and the light emitting layer to expose a part of the first-type doped layer. The contact area between the first contact and the first-type doped layer is increased. Therefore, the LED is worked at high current densities without heat accumulation. Moreover, the light emitting area is not reduced and the light emitting efficiency is not affected. The LED is flipped on a package substrate to form a flip-chip LED package.

The present invention relates to a full-color active addressable Micro-LED chip structure and a manufacturing method thereof, comprising a supporting substrate with a driving circuit array, a stacked layer on the supporting substrate, and a through-stacked layer connected to the driving circuit array Interconnected electrodes, wherein the stacked layers include a substrate metal bonding layer, a multi-layer sandwich structure covered with a transparent conductive layer on the upper and lower surfaces of the multicolor light-emitting epitaxial layer, a dielectric filling layer, a filter layer, a passivation layer, and interconnected electrodes from bottom to top. It includes an array electrode connecting the p-type surface of the first epitaxial layer and the driving pixel, a penetrating array electrode connecting the p-type surface of the second epitaxial layer and the driving pixel, a penetrating array electrode connecting the p-type surface of the third epitaxial layer and the driving pixel, and a penetrating array electrode connecting the p-type surface of the third epitaxial layer and the driving pixel. The stacked layers are respectively connected to the common electrode of the n-type surface of the multi-color light-emitting epitaxial layer. The technical solution of the present invention can manufacture high-resolution and high-efficiency full-color drive fusion Micro-LED chips.

The invention provides a method for manufacturing a light-emitting diode, comprising steps: 1) forming a light-emitting epitaxial structure on the surface of a growth substrate; 2) simultaneously etching an N-electrode platform and a plurality of holes in each light-emitting unit, and the plurality of holes Located between the N electrode platform and the P electrode; 3) Tangentially forming multiple cutting grooves; 4) Depositing a SiO2 layer and removing the SiO2 layer in each hole; 5) Using chemical etching to etch out multiple holes at the bottom of each hole dislocation pits, and remove the residues in each cutting groove at the same time; 6) form the SiO2 layer again; 7) remove part of the SiO2 layer, retain the bottom and side walls of each hole, and the SiO2 layer under the P electrode ; 8) forming a current spreading layer; 9) preparing a P electrode and an N electrode. The invention can reduce the current congestion of the light-emitting diode, improve the uniformity of current distribution, and improve the light-emitting efficiency of the light-emitting diode by making a plurality of holes between the P electrode and the N electrode and forming dislocation pits at the bottom of the holes.

The invention discloses an aluminum alloy high-voltage cable aluminum copper composite terminal. The aluminum alloy high-voltage cable aluminum copper composite terminal comprises a copper alloy substrate and connecting grooves formed in the two ends of the copper alloy substrate; the connecting grooves adopt a U-shaped groove-shaped cross section and are symmetrically distributed along the axis of the copper alloy substrate; the length of the connecting grooves is 1 / 5-1 / 2 of that of the copper alloy substrate; the inner surfaces of the connecting grooves are both distribute with aluminium alloy lining layers; and the thickness of the aluminium alloy lining layers is 1 / 4-3 / 4 of that of the connecting groove side wall; and the preparation method comprises four steps of copper alloy substrate prefabrication, connecting groove pre-processing, aluminum lining layer positioning, connecting groove diameter expansion and connecting groove fine processing. By virtue of the aluminum alloy high-voltage cable aluminum copper composite terminal and the preparation method thereof, the connecting structural strength, the impact resistance performance, the corrosion resistance performance and thehigh temperature resistance performance between the terminal and the cable can be improved effectively, so that the mechanical structural strength of the terminal is highly improved; and in addition,the overload capacity of the terminal is improved effectively, and current distribution uniformity is improved, thereby highly improving reliability and operational stability of the power cable connection operation.

The invention discloses a multifunctional reflector ultraviolet through hole structure LED chip, comprising an epitaxial substrate and an LED epitaxial wafer subjected to epitaxial growth on the epitaxial substrate, wherein the LED epitaxial wafer comprises an n-type doped GaN film, InGaN / GaN multiple quantum wells and a p-type doped GaN film; the n-type doped GaN film grows on the epitaxial substrate; the InGaN / GaN multiple quantum wells grow on the n-type doped GaN film; the p-type doped GaN film grows on the InGaN / GaN multiple quantum wells; the epitaxial substrate is a Si substrate, a GaNsubstrate, a sapphire substrate, a LSAT substrate or LiGaO2 substrate. The invention also provides a preparation method of the multifunctional reflector ultraviolet through hole structure LED chip. Areflector protection layer on the LED chip has excellent thermal stability, high-temperature oxidation resistance and phosphoric acid corrosion resistance, and has three functions of a reflector, a reflector protection layer and an isolation layer.

The invention discloses a high-conduction grid structure of a lead acid storage battery and a processing method of the high-conduction grid structure. The grid structure comprises a grid, wherein a tab is arranged at one side of the grid, at least one high-conduction rib is arranged on the grid, one end of the high-conduction rib is fixedly connected with the tab, and the other end of the high-conduction rib is fixedly connected with a side edge of the grid. The processing method comprises the following steps of (a) covering an acid corrosion-resistant material on a surface of the high-conduction rib, and cutting the high-conduction rib after being covered with the acid corrosion-resistant material to segments; (b) fixing the high-conduction rib which is cut to segments and the grid; and (c) detecting the high-conduction rib and the grid which are fixed so that the high-conduction rib and the grid are enabled to be in a conduction state. The invention aims to provide the high-conduction grid structure of the lead acid storage battery and the processing method of the high-conduction grid structure, which can be used for improving the electrical conducted of the grid and current uniformity during the charge-discharge process.

The invention belongs to the fields of a power transmission line and a power cable, and particularly relates to a crimping type cable conductor connector with a current sharing effect and a preparation method. Each layered insulating conductor consists of a first cylinder positioned in the centre of the conductor, and a second cylinder and a third cylinder with hollow-out central parts and arranged outside the first cylinder in a sleeving manner; the layered insulating conductor is inserted into a hollow conductor connecting pipe from the two ends of the conductor connecting pipe; in a crimping process, a crimping die surrounds the upper and lower sides of a crimping section of the conductor connecting pipe; and the cable conductor connector is extruded by die closing of the crimping die,and the conductor connecting pipe and the layered insulating conductor are subjected to micro deformation. By virtue of the crimping type cable conductor connector, the alternating current resistanceof the large-section cable conductor with the layered insulating structure in the conductor connector position can be lowered, so that the problem of temperature rise in the conductor and the connector positions when the large-section layered insulating conductor is applied can be overcome.

The invention discloses an in-hole oxygen-free dry etching method for reducing the voltage of an LED chip of a 3D through hole superstructure. The method comprises that an n type doped GaN layer, an InGaN / GaN multi-quantum well layer and a p type doped GaN layer are prepared on an epitaxial substrate. A nanometer Ag-based reflector, reflector protective layer, N MESA holes and an insulating layerare prepared in the surface of an LED epitaxial wafer, and n-pad circular holes are formed; SiO2 in the n-pad circular holes are etched in an oxygen-free drying method, the holes are filled with N metal electrodes, and bonding layer metal is prepared; and an old growth substrate is peeled, an MESA cutting channel, a passivation layer PA, a P electrode pattern and P electrode metal are prepared toform the LED chip. The etching ratio of SiO2 to photoresist is controlled to solve the problem that the voltage of the LED chip of the 3D through hole superstructure is too high. The yield rate of thedriving voltage of the whole LED wafer is improved greatly, and the average of in-wafer voltage can be reduce to a value lower than 3.0V.

The invention provides an LED device structure. The LED device structure sequentially comprises a semiconductor substrate, a P-type semiconductor layer, a luminous layer and an N-type semiconductor material layer, wherein a part of the N-type semiconductor material layer exposes. A P-electrode and an N-electrode which are separated are respectively formed on the P-type semiconductor material layer and the N-type semiconductor material layer and respectively comprise an insulating layer, a transparent conductive layer and a metal layer, wherein the metal layer comprises the P-block-shaped metal electrode portion and P-linear metal electrode portion which are connected mutually and a N-block-shaped metal electrode portion and N-linear metal electrode portion which are connected mutually. The N-block-shaped metal electrode portion extends towards the direction of the P-block-shaped metal electrode portion from the N-linear metal electrode portion, and the insulating layer of the N-electrode is located right under the N-linear metal electrode portion. By arranging the insulating layer right under the N-linear metal electrode portion, the distribution uniformity of current in an N-type GaN layer is improved, and the brightness of an LED device is further improved.

The invention belongs to the power transmission line power cable field and particularly relates to a welding type cable conductor connector having the current sharing effect and a welding method. Thetotal layer quantity of conductors is N, when M layers of internal conductors are welded, low resistivity welding rods A are utilized, when O layers of middle conductors are welded, low resistivity welding rods A are utilized, when (N-M-O) layers of external conductors are welded, high resistivity welding rods B are utilized. The method is advantaged in that a problem of temperature rising of theconductors and connector points during application of large-cross section layered insulation conductors can be solved. On the condition that the layered energy saving and consumption reduction conductor performs the effective AC resistance reduction effect, disadvantages of relatively large AC resistance and relatively high temperature existing in a traditional crimping type cable conductor connector under long-term rated work conditions are ameliorated, the process is simple, field maneuverability is strong, line operation loss of the large-cross section AC power cable can be reduced, power transmission efficiency is improved, and the excellent energy saving and consumption reduction effect is realized.

The invention discloses a silicon-based 3D through-hole super-structure LED chip and a preparation method thereof. The preparation method comprises that an n-GaN layer, an InGaN / GaN multi-quantum welllayer and a p-GaN layer are grown on an epitaxial substrate successively, a reflector layer and a reflector protection layer are prepared, holes are formed, an insulating layer is prepared, and N electrode metal filling the holes and bonding-layer metal are prepared; a growth substrate is peeled, an MESA channel and a PA layer are prepared, and P electrode metal is prepared; and the complete silicon-based LED chip with the vertical 3D hole structure is prepared. The 3D through hole super structure has advantages of a vertical linear structure, and converts a 2D current expansion capability ofthe linear structure into a 3D current expansion capability, the current distribution uniformity is greatly improved, and the luminous efficiency is improved greatly.