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Manufacturing system for epitaxial wafer and manufacturing method for epitaxial wafer

A manufacturing system, epitaxy, used in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc.

Pending Publication Date: 2021-10-22
SUMCO CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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  • Manufacturing system for epitaxial wafer and manufacturing method for epitaxial wafer
  • Manufacturing system for epitaxial wafer and manufacturing method for epitaxial wafer
  • Manufacturing system for epitaxial wafer and manufacturing method for epitaxial wafer

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[0119] (specific example)

[0120] according to figure 1 and figure 2 The epitaxial wafer fabrication system shown, image 3 The flow shown is executed, thereby describing a specific example of manufacturing an epitaxial silicon wafer. A p-type single crystal silicon wafer with a diameter of 300 mm and a resistivity of 10 Ω·cm is used as a product wafer and a monitor wafer. The specifications of the epitaxial film are the target thickness range: 3.90~4.10μm (specification center: 4.00μm), and the target resistivity range: 9.0~11.0Ω·cm (specification center: 10.0Ω·cm). In one epitaxial growth process, hydrogen baking was performed at 1130° C. for 60 seconds. After that, the SiHCl as the silicon source 3 and B as a boron doping source 2 h 6 A mixed reaction gas diluted with hydrogen gas was supplied into the chamber of the epitaxial growth apparatus. In addition, the output values ​​of the upper lamp and the lower lamp were PID-controlled so that the temperature detecte...

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Abstract

A manufacturing system for an epitaxial wafer provides high-precision control of the source gas supply time and the doping gas flow, and can reduce the thickness and the resistivity of the epitaxial film relative to the center of the specification. The operation part (600) of the manufacturing system (1000) of the epitaxial wafer of the present invention, when correcting the source gas supply time and the doping gas flow, further takes into account the correction of the variation of the aggregate output value of the upper lamp (20A) and the lower lamp (20B), in addition to correcting the result of comparing the thickness measurement value and the resistivity measurement value of the epitaxial film to the target thickness range and the target resistivity range, respectively.

Description

technical field [0001] The present application relates to an epitaxial wafer manufacturing system including a monolithic epitaxial growth apparatus that grows an epitaxial film on a wafer surface to manufacture an epitaxial wafer, and an epitaxial wafer manufacturing method using the manufacturing system. Background technique [0002] In the field of semiconductor electronics where high performance or high functionality develops, the quality of epitaxial wafers has a greater impact on the quality of product equipment. The epitaxial wafer is formed by vapor-phase-growing an epitaxial film on the surface of the semiconductor wafer. A high-quality epitaxial film with crystal axes aligned follows the regular arrangement of atoms on the surface of a semiconductor wafer. [0003] Conventionally, in order to manufacture epitaxial wafers, a batch-type epitaxial growth apparatus capable of simultaneously performing epitaxial growth on a plurality of semiconductor wafers has been use...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/67
CPCH01L21/20H01L21/67253H01L21/67017C23C16/24C23C16/4583C23C16/46C23C16/482C23C16/52C30B29/06C30B25/105C30B25/165H01L22/26H01L22/12H01L22/14H01L21/02532H01L21/02576H01L21/02579C30B25/10C30B25/16C30B35/00
Inventor 和田直之
Owner SUMCO CORP