A radiation-hardened sic device structure based on distributed capacitance

Abstract

The invention discloses a radiation-strengthened SiC device structure based on distributed capacitance; the invention interleaves distributed floating high-doping-concentration epitaxial layers in the active region's low-doping-concentration first-doping-type epitaxial layer The second doping type structure, the second doping type structure of the same layer with the same vertical position and high doping concentration is arranged at intervals of several active region cells; the first doping region with low doping concentration and high doping concentration between layers The alternating composite structure of the second doped region of the doping concentration forms a PN alternating capacitance, which is arranged vertically from the top electrode to the bottom electrode, and is respectively connected to the floating PN of the same layer in the non-active region for storing charges. junction capacitance connection. The present invention limits the local electric field when a single particle is input through the voltage stabilizing effect formed by the distributed capacitance of multiple series PN junctions, and shunts the local current on the single particle path to "temporarily store it at the distributed capacitance", thereby limiting the device localized power to prevent overheating.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a radiation-hardened SiC device structure based on distributed capacitance. Background technique [0002] Silicon carbide SBD (Schottky diode), JFET (junction field effect transistor), MOSFET (metal oxide field effect transistor) and other device technologies have gradually matured. Penetration, and in the field of military industry, it is also applied in fields such as propulsion and radar power supply. However, in the field of aerospace, its radiation effects under various particles, ions, and rays in space and reinforcement technology have been widely concerned. Due to its special single event effect relative to Si-based power devices, the current commercial SiC devices cannot meet the requirements of aerospace, which can cause violent fluctuations or even complete failure of the power supply, resulting in catastrophic accidents in satellite electronic...

AI Technical Summary

Problems solved by technology

Due to its special single event effect relative to Si-based power devices, the current commercial SiC devices cannot meet the requirements of aerospace, which can cause violent fluctuations or even complete failure of the power supply, resulting in catastrophic accidents in satellite electronic systems, which cannot meet aerospace applications. Require

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