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Preparation method of magnetic thin film with perpendicular magnetic anisotropy and magnetic film

A magnetic thin film and anisotropic technology, applied in the field of magnetic thin film preparation, can solve problems such as the decrease of perpendicular magnetic anisotropy, affecting electrical transport performance, and becoming in-plane magnetic anisotropy

Active Publication Date: 2021-10-26
广东麦格智芯精密仪器有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, too high annealing temperature will cause the diffusion of Ta, so that the perpendicular magnetic anisotropy decreases or even becomes in-plane magnetic anisotropy; of course, it may also affect the electrical transport properties.

Method used

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  • Preparation method of magnetic thin film with perpendicular magnetic anisotropy and magnetic film
  • Preparation method of magnetic thin film with perpendicular magnetic anisotropy and magnetic film

Examples

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Effect test

Embodiment 1

[0026] A thin film was deposited on a single crystal silicon substrate at room temperature by using a magnetron sputtering apparatus, and the thin film structure was Ta(5nm) / CoFeB(1nm) / Mg(O)(2nm) / Ta(2nm). Among them, Mg(O) represents the Mg layer doped with oxygen elements, which is obtained by feeding a certain amount of high-purity oxygen into the main vacuum chamber during the deposition process of the Mg layer, and the purity of the high-purity oxygen used is better than 99.99% %. The substrate is a thermally oxidized single crystal silicon substrate, and the thickness of the oxide layer on the surface of the silicon wafer is 280nm. The CoFeB Ta layer is prepared by DC sputtering technique. All targets were better than 99.9% pure. Before film preparation, the background vacuum of the main vacuum chamber of magnetron sputtering is better than 3.0×10 -7 Torr. During the sputtering process, the amount of oxygen doped is adjusted by changing the flow rate of oxygen and the...

Embodiment 2

[0030] A thin film was deposited on a single crystal silicon substrate at room temperature by using a magnetron sputtering apparatus, and the film structure was Ta(3nm) / CoFeB(1.2nm) / Mg(O)(2.5nm) / Ta(5nm). Among them, Mg(O) represents the Mg layer doped with oxygen elements, which is obtained by feeding a certain amount of high-purity oxygen into the main vacuum chamber during the deposition process of the Mg layer, and the purity of the high-purity oxygen used is better than 99.99% %. The substrate is a thermally oxidized single crystal silicon substrate, and the thickness of the oxide layer on the surface of the silicon wafer is 290nm. The CoFeB Ta layer is prepared by DC sputtering technique. All targets were better than 99.9% pure. Before film preparation, the background vacuum of the main vacuum chamber of magnetron sputtering is better than 3.0×10 -7 Torr. In the process that sputtering takes place, by changing the flow of oxygen, changing the ratio Q of the flow of ar...

Embodiment 3

[0032]A film is deposited on a single crystal silicon substrate at room temperature by using a magnetron sputtering apparatus, and the film structure is Ta(3nm) / CoFeB(1.6nm) / Mg(O)(3nm) / Ta(3nm). Among them, Mg(O) represents the Mg layer doped with oxygen elements, which is obtained by feeding a certain amount of high-purity oxygen into the main vacuum chamber during the deposition process of the Mg layer, and the purity of the high-purity oxygen used is better than 99.99% %. The substrate is a thermally oxidized single crystal silicon substrate, and the thickness of the oxide layer on the surface of the silicon wafer is 320nm. The CoFeB Ta layer is prepared by DC sputtering technique. All targets were better than 99.9% pure. Before film preparation, the background vacuum of the main vacuum chamber of magnetron sputtering is better than 3.0×10 -7 Torr. During the sputtering process, the amount of oxygen doped is adjusted by changing the flow rate of oxygen and the ratio Q of...

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Abstract

The invention discloses a preparation method of a magnetic thin film with perpendicular magnetic anisotropy and the magnetic thin film, and belongs to the technical field of magnetic thin film preparation. According to the preparation method, a Ta / CoFeB / MgO / Ta multilayer film is sequentially deposited on a substrate material under the room temperature condition through a magnetron sputtering instrument, and a MgO layer is prepared through direct-current sputtering of a metal Mg target material and reaction sputtering by introducing a certain amount of high-purity oxygen into a main vacuum chamber in the deposition process of a Mg layer, when the Mg layer is sputtered and deposited, a method of introducing a proper proportion of oxygen is adopted, and a small amount of O atoms are combined with Co and Fe compared with oxide deposition, so that a proper oxidation state is obtained, the phenomenon that a ferromagnetic layer is excessively oxidized in a traditional magnetron sputtering preparation process is avoided, the magnetic thin film prepared by the method does not need vacuum annealing treatment, the doping amount of O can be adjusted by changing the flow ratio of argon to oxygen during sputtering in the preparation process of the MgO layer, the process is simple, and the prepared magnetic thin film has the excellent perpendicular magnetic anisotropy.

Description

technical field [0001] The invention belongs to the technical field of magnetic thin film preparation, and in particular relates to a method for preparing a magnetic thin film with perpendicular magnetic anisotropy and the magnetic thin film. Background technique [0002] Perpendicularly magnetized ferromagnetic / oxide heterostructures, especially CoFeB / MgO, have attracted extensive attention due to their great application prospects in next-generation high-density memory devices. The magnetic tunnel junction based on the vertical magnetization of CoFeB / MgO has high thermal stability factor, high tunneling magnetoresistance, and low magnetization switching critical current density (10 6 A / cm 2 order of magnitude). The magnetization switching critical current density was further reduced to 10 by electric field-assisted means in CoFeB / MgO-based vertical magnetic tunnel junction 4 A / cm 2 order of magnitude. Perpendicular magnetic anisotropy plays an important role in this se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/14
CPCC23C14/35C23C14/14C23C14/082
Inventor 于广华郭日思徐秀兰冯春李明华
Owner 广东麦格智芯精密仪器有限公司