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Cleaning solution for semiconductor integrated circuit and production process of cleaning solution

A technology for integrated circuits and semiconductors, which is applied in the field of cleaning liquid for semiconductor integrated circuits and its production process, and can solve problems such as performance impact and failure to meet use requirements

Pending Publication Date: 2021-10-29
JIANGYIN RUNMA ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to its high precision and high performance, in the long-term use process, a variety of impurities and dust will accumulate in the integrated circuit, which needs to be cleaned strictly, otherwise its performance will be seriously affected and cannot be used. requirements, so it is necessary to prepare a cleaning solution for semiconductor integrated circuits

Method used

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  • Cleaning solution for semiconductor integrated circuit and production process of cleaning solution
  • Cleaning solution for semiconductor integrated circuit and production process of cleaning solution
  • Cleaning solution for semiconductor integrated circuit and production process of cleaning solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Prepare modifying agent, this modifying agent is made by following steps:

[0039] Step S1: Add p-aminotoluene, p-chlorotoluene and toluene into the flask, pass through nitrogen protection, add palladium acetate, binaphthyl diphenylphosphine and cesium carbonate, stir and react at a temperature of 75°C for 5 hours, after the reaction, Intermediate 1 was obtained;

[0040] Step S2: Add cyanuric chloride, N,N-diisopropylethylamine, and tetrahydrofuran into the flask, pass through nitrogen protection, stir for 10 minutes at a temperature of 0°C and a rotation speed of 300r / min, and then add the intermediate Body 1 was reacted for 3h to obtain Intermediate 2;

[0041] Step S3: Add intermediate 2 and tetrahydrofuran into the flask, stir for 10 min at a temperature of 20°C and a rotational speed of 200 r / min, then pass in chlorine gas, and react for 1 h under light conditions to obtain intermediate 3;

[0042] Step S4: Add intermediate 3, potassium carbonate, and deionized ...

Embodiment 2

[0046] Prepare modifying agent, this modifying agent is made by following steps:

[0047] Step S1: Add p-aminotoluene, p-chlorotoluene and toluene into the flask, pass through nitrogen protection, add palladium acetate, binaphthyl diphenylphosphine and cesium carbonate, stir and react at a temperature of 75°C for 5 hours, after the reaction, Intermediate 1 was obtained;

[0048] Step S2: Add cyanuric chloride, N,N-diisopropylethylamine, and tetrahydrofuran into the flask, pass through nitrogen protection, stir for 15 minutes at a temperature of 3°C and a rotation speed of 300r / min, and then add the intermediate Body 1 was reacted for 4h to obtain Intermediate 2;

[0049] Step S3: Add intermediate 2 and tetrahydrofuran into the flask, stir for 15 minutes at a temperature of 25° C. and a rotation speed of 300 r / min, then pass in chlorine gas, and react for 1.25 hours under light conditions to obtain intermediate 3;

[0050] Step S4: Add intermediate 3, potassium carbonate, and d...

Embodiment 3

[0054] Prepare modifying agent, this modifying agent is made by following steps:

[0055] Step S1: Add p-aminotoluene, p-chlorotoluene and toluene into the flask, pass through nitrogen protection, add palladium acetate, binaphthyl diphenylphosphine and cesium carbonate, stir and react at a temperature of 75°C for 5 hours, after the reaction, Intermediate 1 was obtained;

[0056] Step S2: Add cyanuric chloride, N,N-diisopropylethylamine, and tetrahydrofuran into the flask, pass through nitrogen protection, stir for 20 minutes at a temperature of 5°C and a rotation speed of 300r / min, and then add the intermediate Body 1 was reacted for 5h to obtain Intermediate 2;

[0057] Step S3: Add intermediate 2 and tetrahydrofuran into the flask, stir for 20 minutes at a temperature of 30° C. and a rotation speed of 400 r / min, then pass in chlorine gas, and react for 1.5 hours under light conditions to obtain intermediate 3;

[0058] Step S4: Add intermediate 3, potassium carbonate, and ...

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PUM

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Abstract

The invention discloses a cleaning solution for a semiconductor integrated circuit and a production process of the cleaning solution, and belongs to the technical field of cleaning solutions for integrated circuits. The cleaning solution for the semiconductor integrated circuit is prepared from the following raw materials in parts by weight: 30 to 50 parts of absolute ethyl alcohol, 10 to 20 parts of isopropyl alcohol, 5 to 15 parts of N, N-bis (hydroxyethyl) dodecyl amide, 5.2 to 6.2 parts of dichloromethane, 4.5 to 6.5 parts of 1, 4-butanediol and 4.3 to 6.5 parts of adsorbent, the cleaning solution for the semiconductor integrated circuit is prepared by the steps of preparing a solution A, preparing a solution B, mixing and the like, an adsorbent is prepared, attapulgite is used as a raw material, a modifier with quaternary ammonium salt is combined with the adsorbent, and the modified attapulgite has oleophylic groups and quaternary ammonium salt groups, so that microorganisms and oil stains can be taken away; and the cleaning solution prepared by using the adsorbent has excellent adsorption capacity.

Description

technical field [0001] The invention relates to the technical field of cleaning fluid for integrated circuits, in particular to a cleaning fluid for semiconductor integrated circuits and a production process thereof. Background technique [0002] Semiconductor integrated circuit refers to a semiconductor integrated circuit device with at least one circuit block on a semiconductor substrate. A semiconductor integrated circuit is a combination of active components such as transistors, diodes, and passive components such as resistors and capacitors. Interconnection, "integration" on a single semiconductor chip, so as to complete specific circuit or system functions. [0003] At present, semiconductor integrated circuits are used in various fields, such as computer industry, industrial control, machinery, electronics, aviation and many other fields. Due to its high precision and high performance, in the long-term use process, a variety of impurities and dust will accumulate in ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/66C11D3/20C11D3/24C11D3/60C07D251/46B01J20/12B01J20/30
CPCC11D1/66C11D3/201C11D3/2017C11D3/2044C11D3/24C07D251/46B01J20/12
Inventor 何珂戈烨铭汤晓春
Owner JIANGYIN RUNMA ELECTRONICS MATERIAL
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