Silicon carbide power semiconductor device and field effect transistor

Abstract

The invention relates to a silicon carbide power semiconductor device and a field effect transistor. The silicon carbide power semiconductor device comprises a substrate and a plurality of grid electrode grooves arranged at intervals, the plurality of spaced grid electrode grooves are formed at one side of the substrate, and a first grid electrode and a second grid electrode are arranged in each grid electrode groove. The first grid electrode and the second grid electrode are arranged along the extending direction of the substrate, the first grid electrode is of a first conductivity type. and the second grid electrode is of a second conductive type. A grid electrode oxide layer is formed on the inner wall of each grid electrode groove, and is located between the inner wall of the grid electrode groove and the first grid electrode and the second grid electrode. After the first grid electrode and the second grid electrode form a PN junction, the second grid electrode is completely exhausted by the first grid electrode, and a space charge region is formed. The space charge region can bear voltage, equivalently, the thickness of the grid electrode oxide layer is increased, and with the increase of the thickness of the grid electrode oxide layer, the capacitance between the grid electrode and a shielding region is reduced, so that the grid charge is further reduced, the switching rate can be improved, and the switching loss is reduced.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular to a silicon carbide power semiconductor device and a field effect transistor. Background technique [0002] The third-generation semiconductor silicon carbide (SiC) and gallium nitride (GaN) are wide-bandgap semiconductor materials, which have the advantages of high breakdown electric field strength, good thermal stability, and high carrier saturation drift speed. They are used in high-power devices. Application advantages. Power semiconductor devices are often used in high-voltage, high-current, and high-temperature working environments, and have gradually replaced traditional silicon (Si) materials in the field of power electronics. However, the switching loss of existing power semiconductor devices is relatively large. Contents of the invention [0003] Based on this, it is necessary to provide a silicon carbide power semiconductor device and a field effect transistor...

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Problems solved by technology

However, the switching loss of existing power semiconductor devices is large

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