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Composite quantum dot, manufacturing method thereof and metal ion detection method

A technology of composite quantum and metal ions, applied in the field of composite quantum dots, can solve the problems of difficult synthesis, low surface quantum efficiency of InPQDs, complex structure of InP quantum dots, etc., and achieve the effect of reducing surface defects

Pending Publication Date: 2021-11-02
陈学仕
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Problems solved by technology

[0003] However, because of the high sensitivity and low quantum efficiency of the InP QDs surface, different shell structures and chemical properties of the shell interface are used in the synthesis process of InP, such as InP as the core (core), and A shell of zinc sulfide (ZnS) or ZnS / palmitate is formed outside the InPcore to form InP quantum dots with different core-shell composite structures to maintain the quantum luminescent properties of InP quantum dots. This makes the structure of InP-like quantum dots complex and difficult to synthesize

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  • Composite quantum dot, manufacturing method thereof and metal ion detection method
  • Composite quantum dot, manufacturing method thereof and metal ion detection method
  • Composite quantum dot, manufacturing method thereof and metal ion detection method

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Embodiment Construction

[0042] The purpose of the present invention is to provide: (1) composite quantum dots with water-induced surface repair properties and its production method; (2) composite quantum dots after water-induced repair and its production method; Metal detection method for metal ion detection by composite quantum dots with surface repair properties. Hereby describe in detail with the following examples:

[0043](1) Composite quantum dots with water-induced surface repair properties and manufacturing methods thereof:

[0044] Embodiments of the composite quantum dots with water-induced surface repair properties include quantum dots, protection units, and repair units.

[0045] The quantum dots include a first layer composed of M1A1, wherein M1 is a metal selected from zinc, tin, lead, cadmium, indium, gallium, germanium, cobalt, iron, aluminum, magnesium, calcium, strontium, barium, nickel, Silver, titanium, or copper, A1 is a non-metal selected from selenium, sulfur, tellurium, phos...

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Abstract

The invention relates to a composite quantum dot, a manufacturing method thereof and a metal ion detection method. The invention discloses a composite quantum dot with a water-induced surface repair characteristic, and a manufacturing method thereof. The composite quantum dot with the water-induced surface repair characteristic comprises a quantum dot, a protection unit and a repair unit, the quantum dot comprises a first layer formed by M1A1, the protection unit is adsorbed on the quantum dot and comprises an amino compound, and / or quaternary ammonium salt and counter ions of the quaternary ammonium salt, and the repair unit is adsorbed on the quantum dot and comprises metal ions. In addition, the invention further provides the composite quantum dot repaired by water, a manufacturing method of the composite quantum dot and a method for detecting metal ions by using the composite quantum dot with the water-induced surface repairing characteristic.

Description

technical field [0001] The present invention relates to a quantum dot, a production method and an ion detection method, in particular to a composite quantum dot with water-induced surface repair properties, a production method and a method for detecting metal ions using the quantum dot with water-induced surface repair properties. Background technique [0002] Due to their special optical properties, quantum dots can be widely used in different technical fields such as light-emitting diodes, solar cells, and biosensing. Therefore, they continue to be researched and valued by people in related technical fields. Among them, cadmium selenide (CdSe) quantum dots are attracting more attention due to their easier synthesis and superior optical properties. However, considering the impact and toxicity of cadmium (Cd)-based quantum dots (Cd-based QDs) on the environment, III-V quantum dots, such as indium phosphide quantum dots (InP QDs), are due to their low toxicity and The direct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/70B82Y20/00B82Y30/00B82Y40/00G01N21/64
CPCC09K11/70B82Y20/00B82Y30/00B82Y40/00G01N21/6428G01N2021/6439
Inventor 陈学仕陈品如
Owner 陈学仕