Single-wavelength and dual-wavelength switchable semiconductor laser and preparation method thereof

A technology of semiconductors and lasers, which is applied in the field of single- and double-wavelength switchable semiconductor lasers and their preparation. It can solve the problems of not being able to emit lasers with a single wavelength, and achieve high integration and simple manufacturing processes.

Active Publication Date: 2021-11-16
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

General dual-wavelength semiconductor lasers, such as semiconductor lasers using Y-shaped waveguides

Method used

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  • Single-wavelength and dual-wavelength switchable semiconductor laser and preparation method thereof
  • Single-wavelength and dual-wavelength switchable semiconductor laser and preparation method thereof
  • Single-wavelength and dual-wavelength switchable semiconductor laser and preparation method thereof

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[0031] Hereinafter, embodiments will be described with reference to the accompanying drawings of embodiments of the present invention. In the following description, the same module with the same reference numerals. In the case where the same reference numerals, and their names and functions are also the same. Therefore, detailed description thereof will not be repeated.

[0032] To make the objectives, technical solutions and advantages of the present invention will become more apparent hereinafter in conjunction with the accompanying drawings and specific embodiments of the present invention will be further described in detail. It will be appreciated that the specific embodiments described herein are intended to explain the present invention, and will not be construed as limiting the invention.

[0033] figure 1 with figure 2 It provided in a single, three-dimensional structure and the cross-sectional structure of the dual-wavelength semiconductor laser can be switched in accord...

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Abstract

The invention provides a single-wavelength and dual-wavelength switchable semiconductor laser and a preparation method thereof, and the semiconductor laser comprises an epitaxial structure. The epitaxial structure is etched in the length direction to form a ridge waveguide, and the ridge waveguide is etched to form a semi-transparent and semi-reflective grating. A P-type electrode layer is prepared and formed at the position, away from the semi-transparent and semi-reflective grating, of the epitaxial structure, and the P-type electrode layer comprises a gain switch region electrode and a light amplification region electrode which are distributed on the two sides of the semi-transparent and semi-reflective grating; wherein the semi-transparent and semi-reflective grating, the light amplification region electrode and the front cavity surface form a first laser cavity for exciting laser with a first wavelength; and the gain switch region electrode, the part between the gain switch region electrode and the semi-transparent and semi-reflective grating, the semi-transparent and semi-reflective grating and the rear cavity surface form a second laser cavity for exciting laser with a second wavelength. According to the invention, free switching of single wavelength and dual wavelength can be realized, so that free control of one or two energy levels of pumping alkali metal atoms is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a single- and double-wavelength switchable semiconductor laser and a preparation method thereof. Background technique [0002] Semiconductor lasers play an irreplaceable role in communications, radar, electronic countermeasures, electromagnetic weapons, medical imaging, and security inspections. [0003] Diode laser-pumped alkali metal laser is a new type of high-efficiency laser that has developed rapidly in recent years. It has many advantages such as high quantum efficiency, excellent thermal management performance, and narrow line width. It is expected to achieve high-power and high-beam quality laser output. It is used in laser interference, laser damage, laser cooling, laser energy transmission, material processing, and magnetic resonance imaging systems. It has broad application prospects. Commonly used alkali metal atoms are potassium, rubidium, and cesium,...

Claims

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Application Information

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IPC IPC(8): H01S5/10H01S5/22
CPCH01S5/1092H01S5/22
Inventor 周寅利张建伟宁永强张星
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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