Layered manufacturing method for inner lead of semiconductor frame

A manufacturing method and inner lead technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of increasing the cost of cleaning, easy to produce sticking, and high cost of plastic packaging materials, and achieve higher Anti-delamination ability, reduce packaging difficulty and cost, and improve the effect of quality

Pending Publication Date: 2021-11-19
泰兴市龙腾电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a layered manufacturing method for the inner lead of a semiconductor frame to solve the problem that the cost of the molding compound in the prior art proposed in the above-mentione

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Embodiment 1, the present invention provides a technical solution: a layered manufacturing method of an inner lead of a semiconductor frame, comprising the following steps;

[0024] Step 1. Paste the wafer on the blue film and design the dicing road, and use the diamond knife to cut the whole wafer into individual crystal grains through the dicing road designed on the wafer;

[0025] Cutting process: It is necessary to use ultrapure water to remove cutting debris; and add carbon dioxide to pure water to eliminate static electricity generated by diamond knives and silicon wafers during cutting

[0026] Step 2. Coating silver glue in the designated base island area of ​​the lead frame. The silver glue process requires curing of the silver glue, and placing the separated die on the base island area;

[0027] Step 3. Using high-purity metal wires to connect the circuit contacts on the die and the lead frame together by ultrasonic welding, the metal wires are gold wires; the...

Embodiment 2

[0032] Embodiment 2, the present invention provides a technical solution: a layered manufacturing method of an inner lead of a semiconductor frame, comprising the following steps;

[0033] Step 1. Paste the wafer on the blue film and design the dicing road, and use the diamond knife to cut the whole wafer into individual crystal grains through the dicing road designed on the wafer;

[0034] Cutting process: It is necessary to use ultrapure water to remove cutting debris; and add carbon dioxide to pure water to eliminate static electricity generated by diamond knives and silicon wafers during cutting

[0035] Step 2. Coating silver glue in the designated base island area of ​​the lead frame. The silver glue process requires curing of the silver glue, and placing the separated die on the base island area;

[0036] Step 3. Using high-purity metal wires to connect the circuit contacts on the crystal grains and the lead frame through ultrasonic welding, the metal wires are copper w...

Embodiment 3

[0041] Embodiment 3, the present invention provides a technical solution: a layered manufacturing method of an inner lead of a semiconductor frame, comprising the following steps;

[0042] Step 1. Paste the wafer on the blue film and design the dicing road, and use the diamond knife to cut the whole wafer into individual crystal grains through the dicing road designed on the wafer;

[0043] Cutting process: It is necessary to use ultrapure water to remove cutting debris; and add carbon dioxide to pure water to eliminate static electricity generated by diamond knives and silicon wafers during cutting

[0044] Step 2. Coating silver glue in the designated base island area of ​​the lead frame. The silver glue process requires curing of the silver glue, and placing the separated die on the base island area;

[0045] Step 3. Using high-purity metal wires to connect the circuit contacts on the die and the lead frame together by ultrasonic welding, the metal wires are aluminum wires;...

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PUM

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Abstract

The invention discloses a layered manufacturing method for an inner lead of a semiconductor frame. The method comprises the following steps of 1, pasting a wafer on a blue film, designing a cutting channel, and cutting the whole wafer into independent crystal grains by using a diamond cutter through the designed cutting channel on the wafer, 2, coating silver colloid in a specified base island area of the lead frame, and loading the separated crystal grains on the base island area, 3, connecting the circuit contacts on the crystal grains with the lead frame through ultrasonic welding by using a high-purity metal wire, 4, performing plastic packaging on the product by using resin, and performing curing by using molding silica gel after plastic packaging, 5, removing redundant flash between pins around the tube body after the Molding silica gel is removed, and 6, plating a plating layer on the surface of the frame, and carrying out lead-free electroplating by adopting high-purity tin of which the purity is greater than 99.99%. The packaging difficulty and cost are reduced, the quality and reliability of the product are improved, the application range is expanded, and the method can be applied to various fields.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a layered manufacturing method for inner leads of a semiconductor frame. Background technique [0002] Semiconductor lead frame packaging is one of the main post-processing processes of the entire semiconductor component industry chain. The main purpose is to protect the semiconductor silicon chip covered with integrated circuits from external mechanical or chemical factors, and to use the lead frame as a conduction Medium, the material of the lead frame is generally copper or iron; [0003] In the current semiconductor packaging process technology, the delamination inside the components is a major quality defect. The plastic package of the lead frame package is non-sealed, and it is easy to absorb moisture in the air when it is exposed to the air. When the plastic package is subjected to the high temperature of reflow soldering or wave soldering, the vapor pressu...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L21/56H01L23/31H01L23/495
Inventor 张伟陈虎陈惠
Owner 泰兴市龙腾电子有限公司
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