Semiconductor electrothermal film precursor liquid, electrothermal film structure and electrothermal structure preparation method

Abstract

The invention provides a semiconductor electrothermal film precursor liquid, which comprises a component A, a component B and a component C. The component A comprises the following components in parts by weight: 2-10 parts of stannic chloride pentahydrate, 3-6 parts of stannous chloride, 0.3-1 part of glycerol and a PH regulator, and the PH of the component A is 4.7-6.2; the component B comprises the following components in parts by weight: 5-10 parts of a conductivity regulator, 0.6-1 part of aluminum chloride and a PH regulator, the conductivity regulator is one or a combination of more of antimony trichloride dehydrate, bismuth trioxide, aluminum oxide and thallium dioxide, and the PH of the component B is 4.7-5.0; and the component C is prepared from the following components in parts by weight: 0.5-0.7 part of tin oxide, 0.8-1.5 parts of bismuth oxide and 15-25 parts of ethanol. The precursor liquid further comprises 15-30 parts of distilled water. The invention further provides a preparation method of the electric heating film and the electric heating structure, and the obtained semiconductor electric heating film has the advantages of temperature shock resistance, good temperature stability, attenuation resistance, high temperature rise speed and good high temperature resistance.

Description

technical field [0001] The invention relates to the field of semiconductor electrothermal film, in particular to a semiconductor electrothermal film precursor liquid, a semiconductor electrothermal film structure, and a method for preparing the electrothermal structure. Background technique [0002] Compared with traditional electrothermal materials, such as resistance wire, semiconductor electrothermal film has great advantages, such as high electrothermal conversion efficiency, full surface coverage, increased heat transfer area, improved heat transfer rate, and longer service life , can be used in the heating atomizer of electronic cigarettes, but the working temperature of the semiconductor electrothermal film is usually 100-300 ℃, which is relatively lower than that of the resistance wire which is 100-1000 ℃. [0003] In addition, the current tin oxide-based electrothermal film has a relatively obvious resistance change above 500 °C, and the attenuation is relatively se...

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Problems solved by technology

[0002] Compared with traditional electrothermal materials, such as resistance wire, semiconductor electrothermal film has great advantages, such as high electrothermal conversion efficiency, full surface coverage, increased heat transfer area, improved heat transfer rate, and longer service life , can be used in the heating atomizer of electronic cigarettes, but the working temperature of the semiconductor electric heating film is usually 100-300 ℃, compared with the working temperature of the resistance wire is 100-1000 ℃, the working temperature is relatively low

[0003] In addition, due to the obvious resistance change of the current tin oxide electric heating film above 500°C, the attenuation is relatively severe, which limits the application range of the tin oxide electric heating film

[0004] In addition, the heating rate of the electric heating film is relatively slow, and the temperature of the electric heating film is unstable in a short period of time. It is easy to produce carcinogens when used in electronic cigarettes.

[0005] At present, the inorganic electric heating film usually uses tin chloride pentahydrate or tin chloride or stannous chloride as the main component, and the parts by weight are usually 10-60 parts according to the formula, and the tin oxide electric heating film is formed by hydrolysis. The way of doping improves the performance of the electrothermal film, but the doping of this component cannot solve the above technical problems

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