Gallium oxide crystal growth method and combined crucible for growing gallium oxide crystals

Abstract

The invention provides a gallium oxide crystal growth method and a combined crucible for growing gallium oxide crystals, and belongs to the technical field of gallium oxide crystal growth. The gallium oxide crystals are prepared by adopting the combined crucible, so that a gallium oxide melt is not in direct contact with an iraurita crucible, the problem that iridium elements enter the gallium oxide melt to affect the quality of the gallium oxide crystals is avoided; high-temperature decomposition of gallium oxide is inhibited by evacuating original gas in the furnace and filling protective gas; the problem of serious loss of the iraurita crucible caused by dense corrosion pits appearing on the side wall and the bottom of the crucible under the condition that the iridium crucible is adopted for gallium oxide crystal growth can be solved;the gallium oxide single crystal prepared by the method is transparent and free of obvious cracks and bubbles. Compared with a gallium oxide single crystal prepared by an existing method, the gallium oxide single crystals prepared by the method have the advantage of higher crystal crystallization quality.

Description

technical field [0001] The invention relates to the field of gallium oxide crystal growth, in particular to a gallium oxide crystal growth method and a combined crucible for growing gallium oxide crystals. Background technique [0002] Gallium oxide is an ultra-wide bandgap semiconductor material, the bandgap can reach 4.9eV, known as the "fourth generation semiconductor material", compared with the third generation wide bandgap semiconductor material, gallium oxide crystal has a wider bandgap Larger, higher breakdown field strength, and larger factor. In addition, gallium oxide crystals can be prepared by the melt method, thereby greatly reducing the cost of crystal growth. Therefore, gallium oxide has become the first choice for ultra-high voltage and ultra-high power devices Material. [0003] At present, in the gallium oxide crystal growth method, large-sized and high-quality crystals are mainly prepared by methods such as the pulling method and the guided mode method. ...

AI Technical Summary

Problems solved by technology

Due to the particularity of the gallium oxide material itself, it is easy to decompose to produce low-priced gallium oxide or even simple gallium under the condition of high temperature and oxygen deficiency, and these decomposition products will seriously corrode the inner surface of the iridium crucible in contact, resulting in the loss of precious metals

At the same time, at high temperature, part of the iridium metal entering the melt will also affect the crystal quality, resulting in defects such as dislocation, twinning, and mosaic in the gallium oxide crystal.

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