Optical detection method and optical detector

Abstract

The invention provides an optical detection method and an optical detector. The optical detector can comprise a first electrode, a second electrode and a perovskite layer located between the first electrode and the second electrode. In one embodiment of the invention, the optical detector is polarized by applying a certain electric field through an external bias voltage, so conductive ions in the perovskite layer respectively migrate to a first interface between the first electrode and the perovskite layer and a second interface between the second electrode and the perovskite layer; and in this way, a self-built electric field is generated in the perovskite layer, directional separation of carriers is achieved, the carriers are transmitted to the electrodes on the two sides, and an external driving voltage is not needed when the optical detector conducts current detection. Therefore, the optical detector obtained by the invention has the characteristics of simple device structure and self-driving performance.

Description

technical field [0001] The present application relates to the field of energy technology, in particular to a light detection method and a light detector. Background technique [0002] Perovskite materials were first reported in the 1970s because of their high light absorption coefficient, small exciton binding energy, high carrier mobility, long diffusion distance and low energy level defect density, etc. Excellent semiconductor properties have been widely studied and applied in the fields of photodetectors, solar cells, and electroluminescence. However, due to the poor stability of perovskite materials, the practical application of devices is limited to a certain extent. [0003] Perovskite photodetectors show high external quantum efficiency (>90%) and detection sensitivity (>10 14 Jones), large signal-to-noise ratio, and high linear dynamic range (>100dB), which have obvious advantages. In addition, perovskite photodetectors do not require high driving voltage...

AI Technical Summary

Problems solved by technology

The photoconductive detector has a simple device structure and good stability, but it needs to provide an external bias voltage during operation.

The photovoltaic detector can work normally without bias voltage, but it must be based on the semiconductor PN junction to form a built-in electric field. The semiconductor PN junction is usually composed of P-type semiconductors and N-type semiconductors, such as electron transport layers and holes. The transport layer, so it has a more complex device structure, and introduces more interfaces at the same time, which is not conducive to the control of device quality

Images