HEMT device based on double heterojunctions and composite passivation layer, and preparation method thereof

Abstract

The invention discloses an HEMT device based on double heterojunctions and a composite passivation layer, and a preparation method thereof. The method comprises the following steps: carrying out the ion implantation of the upper surface of a first substrate to form a second substrate; forming a bonding intermediate layer on the upper surface of the second substrate, and transferring beta-Ga2O3 to the upper surface of the bonding intermediate layer to form a heterojunction substrate; growing a layer of beta-Ga2O3 on the upper surface of the heterojunction substrate as a buffer layer; sequentially growing a secondary barrier layer, a first doping layer, a first heterojunction layer, a quantum well layer, a second heterojunction layer, a second doping layer and a main barrier layer on the upper surface of the buffer layer; performing ion implantation on two sides of the upper surface of the main barrier layer to form a source ohmic contact region and a drain ohmic contact region; forming a source electrode on the source electrode ohmic contact region, and forming a drain electrode on the drain electrode ohmic contact region; sequentially growing an oxide layer and a dielectric layer on the upper surface of the main barrier layer; forming a grid electrode on the dielectric layer; and growing a passivation layer on the upper surface of the dielectric layer, and etching two sides of the dielectric layer and the passivation layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a HEMT device based on a double heterojunction and a composite passivation layer and a preparation method thereof. Background technique [0002] β-Ga 2 o 3 As a new generation of semiconductor materials, due to β-Ga 2 o 3 The ultra-bandgap width and theoretical breakdown electric field strength of β-GaN are higher than those of SiC and GaN, and they are superior to SiC and GaN in terms of high temperature resistance, high pressure resistance and radiation resistance. Therefore, β-Ga 2 o 3 It is considered suitable for the preparation of next-generation power devices, such as diodes and field-effect transistors. [0003] However, when applied to high power or high frequency, β-Ga 2 o 3 The substrate has problems such as insufficient electron transmission rate and low thermal conductivity, which lead to serious self-heating effect, which greatly affects th...

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Problems solved by technology

[0003] However, when applied to high power or high frequency, β-Ga 2 o 3 The substrate has problems such as insufficient electron transmission rate and low thermal conductivity, which lead to serious self-heating effect, which greatly affects the performance of High Electron Mobility Transistor (HEMT) devices.

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