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Method for manufacturing a magnetic memory element using ru and diamond like carbon hard masks

A technology of magnetic memory and memory elements, applied in static memory, digital memory information, application of conductive/insulating/magnetic materials on magnetic films, etc., can solve the problems that electrons cannot easily pass through, high resistance, etc., and achieve reduction in thickness and data The effect of increased density and reduced shadowing effect

Pending Publication Date: 2021-12-21
INTEGRATED SILICON SOLUTION CAYMAN INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this case, electrons cannot easily pass through the barrier layer, resulting in a higher resistance through the MTJ stack

Method used

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  • Method for manufacturing a magnetic memory element using ru and diamond like carbon hard masks
  • Method for manufacturing a magnetic memory element using ru and diamond like carbon hard masks
  • Method for manufacturing a magnetic memory element using ru and diamond like carbon hard masks

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Embodiment Construction

[0019] The following description is of the best mode currently contemplated for carrying out the invention. This description is for the purpose of illustrating the general principles of the invention and is not meant to limit the inventive concepts claimed herein.

[0020] now refer to figure 1 , the magnetic memory element 100 may be in the form of a vertical magnetic tunnel junction (pMTJ) memory element. The magnetic memory element may include an MTJ 101 which may include a magnetic reference layer 102 , a magnetic free layer 104 , and a thin non-magnetic electrically insulating barrier layer 106 between the magnetic reference layer 102 and the magnetic free layer 104 . The barrier layer 106 can be, for example, an oxide of MgO. The magnetic reference layer has a magnetization 108 fixed in a direction preferably perpendicular to the plane of the layer as indicated by arrow 108 . The magnetically free layer 104 has a magnetization 110 that may be in either of two directio...

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Abstract

A method for manufacturing a magnetic memory element array includes the use of a Ru hard mask layer and a diamond like carbon hard mask layer formed over the Ru hard mask layer. A plurality of magnetic memory element layers are deposited over a wafer and a Ru hard mask layer is deposited over the plurality of memory element layers. A layer of diamond like carbon is deposited over the Ru hard mask layer, and a photoresist mask is formed over the layer of diamond like carbon. A reactive ion etching is then performed to transfer the image of the photoresist mask onto the diamond like carbon mask, and an ion milling is performed to transfer the image of the patterned diamond like carbon mask onto the underlying Ru hard mask and memory element layers. The diamond like carbon mask can then be removed by reactive ion etching.

Description

technical field [0001] The present invention relates to magnetic random access memory (MRAM), and more particularly to methods of fabricating magnetic memory elements using Ru and diamond-like carbon hard masks. Background technique [0002] Magnetic random access memory (MRAM) is a non-volatile data storage technology that uses magnetoresistive cells, such as magnetoresistive tunnel junction (MTJ) cells, to store data. At its most basic level, such an MTJ element comprises first and second magnetic layers separated by a thin nonmagnetic layer, such as a tunnel barrier layer, which can be separated by Such as the material structure of Mg-O. A first magnetic layer, which may be referred to as a reference layer, has a fixed magnetization in a direction perpendicular to the plane of the layer. The second magnetic layer, which may be referred to as a magnetically free layer, has a magnetization that is free to move such that it may be oriented in either of two directions, both...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/0079H01L33/0095H01L21/78H01S5/0202H01S5/0201
CPCG11C11/161H01F10/3272H01F10/3286H01F41/308H01F10/3254H10N50/01H10B61/00H01F41/34H01F10/329H10N50/80
Inventor M·皮纳尔巴斯J·A·埃尔南德斯E·A·多比斯T·D·布恩
Owner INTEGRATED SILICON SOLUTION CAYMAN INC
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