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Composite substrate based on aluminum nitride ceramic material and preparation method and application of composite substrate

A technology of aluminum nitride ceramics and composite substrates, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as GaN or AlN single crystal substrates, and achieve thermal conductivity advantages Obvious, improved thermal conductivity, and reduced dislocation density

Pending Publication Date: 2021-12-24
SINO INNOV SEMICON (PKU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is generally believed in the industry that although AlN ceramic materials are homogeneous materials with GaN or AlN materials, since AlN ceramics are amorphous or polycrystalline materials, it is impossible to achieve epitaxial growth of single crystal materials on its surface, so it is impossible to use AlN ceramic materials as substrates for growing GaN or AlN single crystals

Method used

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  • Composite substrate based on aluminum nitride ceramic material and preparation method and application of composite substrate
  • Composite substrate based on aluminum nitride ceramic material and preparation method and application of composite substrate
  • Composite substrate based on aluminum nitride ceramic material and preparation method and application of composite substrate

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Effect test

Embodiment 1

[0063] This embodiment is used to illustrate the composite substrate of the present invention and its preparation method.

[0064] (1) Select a high-quality AlN ceramic substrate with a thickness of 500 microns (Zhongchuang Yanyuan Semiconductor Technology Co., Ltd., 180W / mk aluminum nitride ceramic substrate), and use the CMP polishing method to polish the surface of the AlN ceramic substrate. Obvious steps, surface roughness within 25nm;

[0065] (2) Using PECVD technology to grow SiO on the polished surface of the above ceramic substrate 2 thin film, SiO 2 The film thickness is 2.0 microns;

[0066] (3) Use a glue spreader to coat the above SiO 2 The surface is coated with a photoresist with a thickness of 1.2 microns, and the photoresist is imprinted into a periodic cylinder with a bottom diameter of 2 μm, a height of about 2.4 μm, and a period of 3 μm by using nano-imprint technology; using ICP etching technology to etch The AlN ceramic substrate after imprinting, the S...

Embodiment 2

[0073] This embodiment is used to illustrate the composite substrate of the present invention and its preparation method.

[0074] (1) Select a high-quality AlN ceramic substrate with a thickness of 500 microns (Zhongchuang Yanyuan Semiconductor Technology Co., Ltd. 180W / mk aluminum nitride ceramic substrate), and use CMP polishing to polish the surface of the AlN ceramic substrate. The microscope shows that the surface is not obvious Steps, surface roughness within 5nm;

[0075] (2) Using PECVD technology to grow SiO on the polished surface of the above ceramic substrate 2 thin film, SiO 2 The film thickness is 1.5 microns;

[0076] (3) Use a glue spreader to coat the above SiO 2 The surface is coated with a photoresist with a thickness of 1.2 microns, and the photoresist is imprinted into a periodic cylinder with a bottom diameter of 2 μm, a height of about 2.4 μm, and a period of 3 μm by using nano-imprint technology; using ICP etching technology to etch The AlN ceramic...

Embodiment 3

[0085] This embodiment is used to illustrate the composite substrate of the present invention and its preparation method.

[0086] (1) Select a high-quality AlN ceramic substrate with a thickness of 200 microns (Nippon Maruwa Co., Ltd. 180W / mk aluminum nitride ceramic substrate), and use CMP polishing to polish the surface of the AlN ceramic substrate. The microscope shows that there are no obvious steps on the surface and the surface is rough. The degree is within 0.01nm;

[0087] (2) Using PECVD technology to grow SiO on the polished surface of the above ceramic substrate 2 thin film, SiO 2 The film thickness is 1.5 microns;

[0088] (3) Use a glue spreader to coat the above SiO 2 The surface is coated with a photoresist with a thickness of 1.2 microns, and the photoresist is imprinted into a periodic cylinder with a bottom diameter of 2 μm, a height of about 2.4 μm, and a period of 3 μm by using nano-imprint technology; using ICP etching technology to etch The AlN ceram...

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Abstract

The invention provides a composite substrate based on an aluminum nitride ceramic material. The composite substrate comprises (a) an aluminum nitride ceramic substrate; (b) a graphic structure layer which comprises graphic structures located on the aluminum nitride ceramic substrate, and the graphic structures are periodically distributed on the aluminum nitride ceramic substrate at intervals; and (c) a polycrystalline coating layer, wherein the polycrystalline coating layer is a continuous layer which covers the graphic structure layer and the aluminum nitride ceramic substrate which is not covered by the graphic structure layer. The composite substrate based on the AlN ceramic material provided by the invention is used for growing a GaN or AlN single crystal material, and the cost of the substrate material is reduced while thermal mismatch and dislocation are avoided.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, and in particular relates to a composite substrate based on aluminum nitride (AlN) ceramic material and a preparation method and application thereof. Background technique [0002] With the development of gallium nitride (GaN) material system, the application of GaN material system devices is becoming more and more extensive. Except for GaN-based LED devices that have been widely used, GaN-based radio frequency devices have been widely used in 5G and other fields. At the same time, GaN-based power devices, such as high electron mobility transistor (HEMT) devices, have also been developed very rapidly in the fields of electric vehicles and fast charging. At the same time, aluminum nitride (AlN) single crystal materials have also been widely developed. application. Some application fields of third-generation semiconductors gradually replacing first-generation and second-generation ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L23/373H01L29/06H01L21/02H01L33/00
CPCH01L33/20H01L33/007H01L21/02389H01L21/0243H01L21/0254H01L29/0657H01L23/3731H01L23/3735H01L21/02H01L29/06H01L23/373H01L33/00
Inventor 孙永健郭坚豆学刚陆羽
Owner SINO INNOV SEMICON (PKU) CO LTD
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