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Electrochromic film layer structure as well as preparation method and application thereof

A technology of electrochromic film and electrochromic device, applied in coating, metal material coating process, ion implantation plating, etc., can solve problems such as poor temperature resistance, achieve suppressed attenuation, increase optical modulation amplitude and Effect of coloring efficiency and stable performance

Pending Publication Date: 2021-12-31
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the high-temperature process is helpful to realize the tungsten oxide electrochromic film with high cycle stability, it is difficult to apply this high process temperature (≥200°C) to the preparation of electrochromic devices on polymer substrates such as PET. It is mainly due to the poor temperature resistance of polymer materials such as PET, and it is difficult to apply in an environment exceeding 150 ° C. Therefore, it is urgent to find a stable electrochromic cycle for flexible tungsten oxide films prepared at low temperatures. technical means

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  • Electrochromic film layer structure as well as preparation method and application thereof
  • Electrochromic film layer structure as well as preparation method and application thereof
  • Electrochromic film layer structure as well as preparation method and application thereof

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preparation example Construction

[0042] Another aspect of the embodiments of the present invention also provides a method for preparing the aforementioned electrochromic film layer structure, which includes:

[0043] providing a substrate provided with a transparent conductive layer;

[0044] Depositing a tungsten oxide layer on the surface of the transparent conductive layer by using magnetron sputtering technology, using a tungsten oxide target as a target;

[0045] And, using the magnetron sputtering technology, using the zinc-tin oxide target as the target material, an amorphous zinc-tin oxide buffer layer is deposited on the surface of the tungsten oxide layer, thereby obtaining an electrochromic film layer structure.

[0046]In some more specific embodiments, the mass ratio of zinc oxide to tin oxide in the zinc-tin oxide target is 100:(50-200).

[0047] Further, the sputtering method adopted by the magnetron sputtering technology includes radio frequency sputtering or intermediate frequency sputtering...

Embodiment 1

[0068] (1) Magnetron sputtering deposition of nano-columnar tungsten oxide layer

[0069] The tungsten oxide target is placed in the magnetron sputtering coating equipment, and the nano columnar tungsten oxide layer is deposited on the PET substrate covered with the ITO transparent conductive layer. The parameters in the sputtering process are as follows: the sputtering method is radio frequency sputtering or intermediate frequency sputtering, and the working gas is O 2 and Ar, where O 2 The flow ratio of Ar and Ar is 1:4; the substrate temperature is 80°C; the vacuum degree is 5×10 -2 Pa; the sputtering pressure value is 1.2Pa; the sputtering power density is 4.7W / cm 2 ; The thickness of the tungsten oxide layer is 300nm;

[0070] (2) Magnetron sputtering deposition of amorphous ZnO buffer layer

[0071] The zinc-tin oxide target is placed in the magnetron sputtering coating equipment, and the amorphous zinc-tin oxide buffer layer is deposited on the ITO transparent condu...

Embodiment 2

[0089] (1) Magnetron sputtering deposition of nano-columnar tungsten oxide layer

[0090] The tungsten oxide target is placed in the magnetron sputtering coating equipment, and the nano columnar tungsten oxide layer is deposited on the PET substrate covered with the ITO transparent conductive layer. The parameters in the sputtering process are as follows: the sputtering method is radio frequency sputtering or intermediate frequency sputtering, and the working gas is O 2 and Ar, where O 2 The flow ratio of Ar and Ar is 0.2:4; the substrate temperature is 25°C; the vacuum degree is 0.1×10 -2 Pa; sputtering pressure value is 0.4Pa; sputtering power density is 2.8W / cm 2 ; The thickness of the tungsten oxide layer is 200nm;

[0091] (2) Magnetron sputtering deposition of amorphous ZnO buffer layer

[0092] The zinc-tin oxide target is placed in the magnetron sputtering coating equipment, and the amorphous zinc-tin oxide buffer layer is deposited on the ITO transparent conductiv...

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Abstract

The invention discloses an electrochromic film layer structure and a preparation method and application thereof. The electrochromic film layer structure comprises a tungsten oxide layer and an amorphous zinc tin oxide buffering layer which are arranged in a laminating mode, wherein the tungsten oxide layer has a nano columnar structure. The prepared electrochromic film layer structure can obviously inhibit attenuation of tungsten oxide coloring state transmittance in the electrochemical cycling process; the optical modulation amplitude and coloring efficiency are improved; meanwhile, the prepared electrochromic film layer structure has good electrochromic cycling stability, and the basic requirement on stable operation of an electrochromic device is met.

Description

technical field [0001] The invention belongs to the technical field of electrochromic devices and applications, and in particular relates to an electrochromic film layer structure and its preparation method and application. Background technique [0002] At present, flexible electrochromic devices based on polymer substrates such as polyethylene terephthalate (PET) are increasingly used in building energy-saving windows, smart car windows, multifunctional displays, and wearable devices. Much attention. The basic requirements of the above-mentioned applications for electrochromic devices are: wide light modulation range, good cycle stability, stable mechanical properties, large-area preparation, and fast response speed. [0003] Generally, a typical flexible electrochromic device contains five layers, namely a top transparent conductive layer, a cathodic electrochromic layer, a Li-ion electrolyte layer, an ion storage layer (or anodic electrochromic layer), and a bottom trans...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35G02F1/1524B82Y40/00
CPCC23C14/083C23C14/086C23C14/352G02F1/1524B82Y40/00
Inventor 杨晔冯旺旺楼其村宋伟杰
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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