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Preparation method of perovskite material layer and battery device

A perovskite material and perovskite technology, applied in the direction of electrical solid devices, electrical components, semiconductor devices, etc., can solve the problems of poor transmission, strong electron recombination at grain boundaries, and affecting the performance of battery devices, so as to prevent charge recombination, Improvement of extraction and transfer, the effect of increasing the efficiency of battery devices

Active Publication Date: 2021-12-31
HUANENG CLEAN ENERGY RES INST +1
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Problems solved by technology

However, in the process of perovskite film formation, the grain boundary electron recombination is strong and the transmission is poor, which affects the performance of battery devices

Method used

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  • Preparation method of perovskite material layer and battery device
  • Preparation method of perovskite material layer and battery device

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[0020] The application provides a method for preparing a perovskite material layer, comprising the following steps:

[0021] S1. A perovskite solution is obtained from a solute and a solvent configuration, the solute includes a precursor material or perovskite single crystal, N-type or P-type nano-conductive particles prepared by it; the precursor material includes PbI 2 , PbBr 2 , CsI or CsBr; the N-type nano conductive particles are fullerene, SnO 2 、TiO 2 or ZnO nanoparticles; the P-type nano-conductive particles are NiO x 、Cu 2 Nanoparticles of O, CuI or CuSCN;

[0022] S2, wet-forming the perovskite solution obtained in step S1, and then performing annealing treatment at an annealing temperature of 100-150° C. for 10-30 minutes to form a perovskite crystal layer with a thickness of 100-300 nm, and There are channels at the grain boundaries;

[0023] S3, forming a barrier layer for preventing charge recombination on the surface of the perovskite crystal layer obtaine...

Embodiment 1

[0042] A method for preparing a perovskite material layer and a battery device, specifically as follows:

[0043] (1) Configure the perovskite precursor solution according to MAPbI 3 Stoichiometric ratio, MAI:PbI 2 =1:1 (molar ratio), perovskite concentration 1mol / L, solvent DMF; add N-type nano conductive particles: SnO 2 Nanoparticles, 0.1% by mole ratio of perovskite.

[0044] (2) Preparation of SnO by spin-coating method on FTO conductive substrate 2 Electron transport layer, thickness 40nm, SnO 2 The precursor solution is commercially available SnO 2 Colloidal dispersion, its ratio is dispersion: ultrapure water = 1:3 (volume ratio).

[0045] (3) SnO prepared in step (2) 2 On the electron transport layer, the perovskite solution obtained in step (1) was prepared into a film by scraping coating method, and then annealed. 2 Nanoparticles are enriched at the grain boundary to form N-type channels;

[0046] (4) On the perovskite crystalline layer prepared in step (3),...

Embodiment 2

[0052] A method for preparing a perovskite material layer and a battery device, specifically as follows:

[0053] (1) Configure the perovskite precursor solution, using perovskite Cs 0.05 FA 0.70 MA 0.25 PB 3 , concentration 1.2mol / L, solvent DMF:DMSO=9:1 (volume ratio); add P-type nano conductive particles: NiO x Nanoparticles, 0.15% by mole ratio of perovskite.

[0054] (2) Use NiO on the FTO conductive substrate x A pure aqueous solution of nanoparticles was used to prepare a hole transport layer with a thickness of 50 nm by spin coating, and annealed at 120° C. for 10 min.

[0055] (3) On the hole transport layer prepared in step (2), the perovskite solution obtained in step (1) was prepared into a film by scraping coating method, and then annealed. The annealing temperature was 150°C and the time was 20 minutes. Thickness 250nm, while NiO x Nanoparticles are enriched at the grain boundary to form P-type channels;

[0056] (4) On the perovskite crystal layer prepar...

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Abstract

The invention belongs to the technical field of perovskite solar batteries, and provides a preparation method of a perovskite material layer and a battery device.The preparation method comprises the steps: S1, obtaining a perovskite solution through configuration, solute comprising a precursor material or perovskite single crystals prepared from the precursor material and N type or P type nano conductive particles; S2, performing wet film formation on the obtained perovskite solution, and then performing annealing treatment at the annealing temperature of 100-150 DEG C for 10-30 minutes to form a perovskite crystal layer with the thickness of 100-300nm and a channel at a crystal boundary; and S3, forming a barrier layer for preventing charge recombination on the surface of the obtained perovskite crystal layer, and preparing a perovskite material layer. According to the method, an N type or P type charge transmission channel is formed at the grain boundary, so that extraction and transmission of charge transmission are improved, and the efficiency of a battery device applying the charge transmission channel is improved.

Description

technical field [0001] The application belongs to the technical field of perovskite solar cells, and in particular relates to a method for preparing a perovskite material layer and a battery device. Background technique [0002] Currently, perovskite solar cells (PSCs) are one of the solar cells that have attracted much attention. Typically, perovskite solar cells are mainly composed of FTO conductive glass, electron transport layer, perovskite material absorption layer, hole transport layer and metal electrodes. The working principle of this photoelectric effect solar cell is: when receiving sunlight, the perovskite layer first absorbs photons to generate electron-hole pairs, and then the unrecombined electrons and holes are transported by the electron transport layer and the hole transport layer respectively. The collection, and finally, the photocurrent is generated by a circuit connecting the FTO and the metal electrodes. [0003] Among them, the perovskite crystal is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H01L51/42H01L51/44H10K99/00
CPCH10K71/12H10K71/40H10K30/15H10K30/00H10K30/88Y02E10/549
Inventor 李卫东熊继光赵志国刘家梁李梦洁赵东明秦校军李新连王百月许世森汪强梁思超
Owner HUANENG CLEAN ENERGY RES INST
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