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Low-temperature diffusion welding method for ultra-high-purity copper target material component

A diffusion welding and target material technology, which is applied in welding equipment, welding/welding/cutting items, non-electric welding equipment, etc., can solve the problems of low welding joint degree and poor high temperature resistance of brazing method, so as to ensure the crystal grain Effect of size, productivity improvement

Pending Publication Date: 2022-01-07
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this welding method improves the problem that the welding workpiece and the solder are difficult to infiltrate through the metal intermediate layer, the brazing method still has the problems of low welding bonding and poor high temperature resistance.

Method used

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  • Low-temperature diffusion welding method for ultra-high-purity copper target material component
  • Low-temperature diffusion welding method for ultra-high-purity copper target material component
  • Low-temperature diffusion welding method for ultra-high-purity copper target material component

Examples

Experimental program
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Effect test

Embodiment 1

[0061] This embodiment provides a method for low-temperature diffusion welding of ultra-high-purity copper target components, and the method includes the following steps:

[0062] Provide an ultra-high-purity copper target 1 (purity is 6N) and a copper alloy back plate 2; the material of the copper alloy back plate 2 is a copper-zinc alloy, and the copper alloy back plate 2 is provided with grooves, and the concave The bottom surface of the groove is the welding surface;

[0063] (1) The welding surface of the ultra-high-purity copper target 1 is turned with a diamond tool, and the roughness after turning is 0.8 μm;

[0064] Turn the welding surface of the copper alloy back plate 2 to the thread 5 with a spacing of 0.3 mm and a depth of 0.15 mm, then use a wire brush to clean along the direction of the turning thread, and then use isopropanol to perform ultrasonic cleaning for 25 minutes. Under the condition of 70 ℃, carry out vacuum drying for 70 minutes, and control the pre...

Embodiment 2

[0069] This embodiment provides a method for low-temperature diffusion welding of ultra-high-purity copper target components, and the method includes the following steps:

[0070] Provide an ultra-high-purity copper target material 1 (purity is 6N) and a copper alloy back plate 2; the material of the copper alloy back plate 2 is copper-chromium alloy, and the copper alloy back plate 2 is provided with grooves, The bottom surface of the groove is the welding surface;

[0071] (1) The welding surface of the ultra-high-purity copper target 1 is turned with a diamond tool, and the roughness after turning is 0.7 μm;

[0072] Turn the welding surface of the copper alloy back plate 2 to the thread 5 with a spacing of 0.2 mm and a depth of 0.15 mm, then use a wire brush to clean along the direction of the turning thread, and then use isopropanol to perform ultrasonic cleaning for 20 minutes. Carry out vacuum drying at 60°C for 60 minutes, and control the pressure of vacuum drying at ...

Embodiment 3

[0076] This embodiment provides a method for low-temperature diffusion welding of ultra-high-purity copper target components, and the method includes the following steps:

[0077] Provide an ultra-high-purity copper target material 1 (purity is 6N) and a copper alloy back plate 2; the material of the copper alloy back plate 2 is copper-chromium alloy, and the copper alloy back plate 2 is provided with grooves, The bottom surface of the groove is the welding surface;

[0078] (1) The welding surface of the ultra-high-purity copper target 1 is turned with a diamond tool, and the roughness after turning is 0.7 μm;

[0079] Turn the welding surface of the copper alloy back plate 2 to the thread 5 with a spacing of 0.45 mm and a depth of 0.1 mm, then use a wire brush to clean along the direction of the turning thread, and then use isopropanol to perform ultrasonic cleaning for 30 minutes. Under the condition of 80 ℃, carry out vacuum drying for 80 minutes, and control the pressure...

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Abstract

The invention provides a low-temperature diffusion welding method for an ultra-high-purity copper target material component. The low-temperature diffusion welding method for the ultra-high-purity copper target material component comprises the following steps that the welding face of an ultra-high-purity copper target material is pretreated; threads are turned on the welding surface of a copper alloy back plate; the distance between the threads ranges from 0.2 mm to 0.45 mm, and the depth of the threads ranges from 0.1 mm to 0.15 mm; the treated ultra-high-purity copper target material and the copper alloy back plate are assembled, and then the ultra-high-purity copper target material and the copper alloy back plate which are assembled are put into a sheath for degassing treatment after being subjected to vacuum packaging; and after degassing treatment, diffusion welding is carried out, then cooling is carried out, and the ultra-high-purity copper target material component is obtained. By turning the threads on the welding face of the back plate and further controlling the size of the threads, the ultra-high-purity copper target material and the copper alloy back plate are welded together at the low temperature, and the grain size, the electric conduction performance, the heat conduction performance and the welding strength of the ultrahigh-purity copper target material are guaranteed.

Description

technical field [0001] The invention belongs to the technical field of copper target preparation, in particular to a method for low-temperature diffusion welding of ultra-high-purity copper target components. Background technique [0002] With the rapid development of ultra-large-scale integrated circuits, the size of semiconductor chips has been reduced to the nanometer level, and the RC delay and electromigration of metal interconnections have become the main factors affecting chip performance. Traditional aluminum and aluminum alloy interconnections are no longer available. It can meet the requirements of VLSI process. Compared with aluminum, copper has higher resistance to electromigration and higher electrical conductivity, especially ultra-high-purity copper (purity ≥ 6N), which is of great significance for reducing the resistance of chip interconnection lines and improving its operation speed. [0003] Due to its excellent electrical conductivity, ultra-high-purity c...

Claims

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Application Information

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IPC IPC(8): B23K20/02B23K20/24B23K20/233
CPCB23K20/02B23K20/24B23K20/233B23K2101/36B23K2103/12
Inventor 姚力军潘杰边逸军王学泽慕二龙汪焱斌
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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