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Transparent wear-resistant film layer, plastic surface modification method and product

A technology of surface modification and wear-resistant film, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of high production cost, complicated process, difficult quality control, etc., and achieve enhanced stability and wear-resistant life, expand the application range, and improve the effect of surface energy

Pending Publication Date: 2022-01-07
JIANGSU FAVORED NANOTECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The whole process is complicated, and industrial production needs to be equipped with various procedures, the production cost is relatively high, and quality control is difficult. At the same time, the solution spraying method is used, which inevitably leads to environmental pollution and personnel health problems.

Method used

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  • Transparent wear-resistant film layer, plastic surface modification method and product
  • Transparent wear-resistant film layer, plastic surface modification method and product
  • Transparent wear-resistant film layer, plastic surface modification method and product

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0087] 1) Place the PC sheet in deionized water and industrial high-purity ethanol or isopropanol for ultrasonic cleaning for 10 minutes to remove surface oil.

[0088] 2) After drying the PC sheet obtained above, load it in the chamber of the PECVD coating equipment, and vacuumize it to 1×10 -2 Below Pa, feed an inert gas (Ar or He) with a flow rate of 100 sccm, keep the vacuum at 0.5 Pa, load a 500V bias voltage on the turntable, set the ICP power to 300W, perform ion bombardment activation for 10 minutes, and then feed O 2 , the flow rate is 100sccm, the vacuum degree is kept at 0.5Pa, the bias voltage of 200V is loaded on the turntable, the ICP power is set to 500W, and the ion bombardment activation is performed for 10 minutes to increase the surface activity.

[0089] 3) Introduce hexamethyldisiloxane monomer vapor, the monomer flow rate is 300 μL / min, and at the same time, inject He and O 2 , the flow rates are 100sccm and 300sccm respectively, and the butterfly valve ...

Embodiment 2

[0092] 1) Place the PC sheet in deionized water and industrial high-purity ethanol or isopropanol for ultrasonic cleaning for 10 minutes to remove surface oil.

[0093] 2) After drying the PC material obtained above, load it in the chamber of the PECVD coating equipment, and vacuumize it to 1×10 -2 Below Pa, feed Ar with a flow rate of 100 sccm, keep the vacuum at 0.5 Pa, load a bias voltage of 500V on the turret, set the ICP power to 300W, perform ion bombardment activation for 10 minutes, and then feed H 2 , the flow rate is 100sccm, the vacuum degree is kept at 0.5Pa, the bias voltage of 200V is loaded on the turntable, the ICP power is set to 500W, and the ion bombardment activation is performed for 10 minutes to increase the surface activity.

[0094] 3) Introduce tetraethoxysilane (TEOS) monomer steam, the monomer flow rate is 500μL / min, and at the same time, O 2 , the flow rate is 300sccm, and the butterfly valve is adjusted to maintain the vacuum pressure at 15Pa, a 6...

Embodiment 3

[0097] 1) Place the PC sheet in deionized water and industrial high-purity ethanol or isopropanol for ultrasonic cleaning for 10 minutes to remove surface oil.

[0098] 2) After drying the PC material obtained above, load it in the chamber of the PECVD coating equipment, and vacuumize it to 1×10 -2 Below Pa, feed an inert gas (Ar or He) with a flow rate of 100 sccm, keep the vacuum at 0.5 Pa, load a 500V bias voltage on the turntable, set the ICP power to 300W, perform ion bombardment activation for 10 minutes, and then feed O 2 , the flow rate is 100sccm, the vacuum degree is kept at 0.5Pa, the bias voltage of 200V is loaded on the turntable, the ICP power is set to 500W, and the ion bombardment activation is performed for 10 minutes to increase the surface activity.

[0099] 3) Introduce tetramethoxysilane (TMOS) monomer vapor, the monomer flow rate is 550μL / min, and at the same time, Ar and O 2 , the flow rates are 100sccm and 300sccm respectively, and the butterfly valve ...

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Abstract

The invention discloses a transparent wear-resistant film layer, a plastic base material modification method and a product. The plastic base material modification method comprises the following steps that ion bombardment is carried out on at least one plastic base material positioned in a cavity of PECVD (Plasma Enhanced Chemical Vapor Deposition) coating equipment to clean and activate the plastic base material; and a transparent wear-resistant film layer is formed on the surface of the activated plastic base material through deposition by taking a siloxane monomer as a reaction raw material through a plasma enhanced chemical vapor deposition method.

Description

technical field [0001] The invention relates to the field of surface modification of plastic materials, in particular to a transparent wear-resistant film layer, a plastic surface modification method and products. Background technique [0002] Plastic is a very common material in daily life, and transparent plastic is one of them. Compared with ordinary plastic, transparent plastic can be used as an optical material. At present, there are hundreds of types of transparent plastics, among which polymethyl methacrylate (PMMA), polycarbonate (PC), polystyrene (PS), etc. are widely used. These transparent plastics have low density. , easy processing and molding, good impact resistance, foldable and other excellent qualities, so in the field of display materials, the original glass substrate is being replaced by transparent plastic, especially in the field of portable and wearable electronic displays. [0003] However, transparent plastics have their own disadvantages, such as po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40C23C16/50C08J7/046C08L69/00
CPCC23C16/401C23C16/50C08J7/046C08J7/0427C08J2369/00B05D1/60B05D1/62C23C16/0236C23C16/0245C23C16/505C23C16/4485B05D3/144B05D3/0486B05D7/04B05D2201/02B05D2350/30B05D2401/33B05D2518/10B05D2518/12C09D183/04C08J2483/04C08J7/18B05D1/005B05D3/104B05D3/142B05D2350/35
Inventor 宗坚李福星李思越
Owner JIANGSU FAVORED NANOTECHNOLOGY CO LTD
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