Top gate structure all-solid-state memory transistor multivariable mask plate based on overlay technology

Abstract

The invention relates to the field of semiconductor device manufacturing, in particular to a top gate structure all-solid-state memory transistor multivariable mask based on an overlay technology. The mask plate comprises three sub-masks, specifically, a channel mask, a source and drain electrode mask and a grid electrode mask, wherein the channel mask comprises eight different device sizes, each device size corresponds to two contact modes of the channel region and the source and drain electrode region, and 16 devices capable of forming contrast are formed. According to the invention, the needed thin film is prepared through the magnetron sputtering method which is simple in equipment, easy to control and good in film forming effect, the film preparing technology is compatible with the CMOS technology, and batch production of devices is facilitated. The materials of all parts are all-solid-state materials, and the inherent degradation and difficult packaging problems of organic materials and liquid materials can be solved.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a multi-variable mask plate of an all-solid-state memory transistor with a top-gate structure based on overlay technology. Background technique [0002] Memory transistors can realize the integration of computing and storage, which is expected to break through von Neumann's bottleneck and realize parallel processing of signals; microelectronic devices can also be used to simulate the function of biological synapses, stepping out of the first place in neuromorphic engineering and artificial neural networks (ANNS). step; at present, the overlay technology based on photolithography is an important method to realize multi-layer high-definition layout; the top-gate structure memory transistor belongs to multi-layer high-definition layout, which needs multiple exposures to complete, and each exposure layer Graphics need to use different masks; however, the materials co...

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Problems solved by technology

[0002] Memory transistors can realize the integration of computing and storage, which is expected to break through von Neumann's bottleneck and realize parallel processing of signals; microelectronic devices can also be used to simulate the function of biological synapses, stepping out of the first place in neuromorphic engineering and artificial neural networks (ANNS). step; at present, the overlay technology based on photolithography is an important method to realize multi-layer high-definition layout; the top-gate structure memory transistor belongs to multi-layer high-definition layout, which needs multiple exposures to complete, and each exposure layer Graphics need to use different masks; however, the materials corresponding to many masks are organic materials or liquid materials, which have technical problems of difficult degradation and packaging, and the current CMOS-based process tape-out costs are relatively high, so it is not possible to To get enough experimental data

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