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Self-crosslinkable isocyanurate polymer, anti-reflection coating composition, and preparation method and pattern forming method of composition

A technology of isocyanurate and anti-reflection coating, which is applied in the direction of coating, opto-mechanical equipment, photo-engraving process of patterned surface, etc., can solve the large difference in refractive index n and extinction coefficient k of anti-reflection coating And other issues

Pending Publication Date: 2022-01-14
XIAMEN HENGKUN NEW MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The object of the present invention is to overcome the defect that the refractive index n and the extinction coefficient k of the antireflection coating formed after the existing bottom antireflection coating composition is baked and cured at different temperatures are relatively different, and to provide a Self-crosslinkable isocyanurate polymer and antireflective coating composition with stable refractive index n and extinction coefficient k formed by baking and curing at different temperatures, preparation method and pattern forming method thereof

Method used

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  • Self-crosslinkable isocyanurate polymer, anti-reflection coating composition, and preparation method and pattern forming method of composition
  • Self-crosslinkable isocyanurate polymer, anti-reflection coating composition, and preparation method and pattern forming method of composition
  • Self-crosslinkable isocyanurate polymer, anti-reflection coating composition, and preparation method and pattern forming method of composition

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preparation example Construction

[0058] The preparation method of the anti-reflective coating composition provided by the present invention includes mixing the self-crossing isocyanuric acid polymer, an acid generator, an organic solvent, and an optional surfactant. Among them, the mixed uniform methods and conditions can be conventional selection in the art, which can be known in the art, not described herein.

[0059]The pattern forming method provided by the present invention includes: coating the anti-reflective coating composition to a substrate and thermally curing to form an anti-reflective coating on a substrate; a photoresist is formed on an anti-reflective coating. Layer; the photoresist layer is exposed and developed to form a photoresist pattern.

[0060] The substrate can be used with silicon, silica or aluminum-alumina microelectronic wafer, or a gallium arsenide, silicon carbide, ceramic, quartz or copper substrate, is also suitably used for liquid crystal displays or other flat panel displays appl...

preparation example 1

[0064] Preparation 1: Preparation of prepolymer S1

[0065] 15 g (28.5 mmol) of three (1,3-oxygen heterocyclic-2-thionyl-5-methyl) isocyanurate, 10.5 g (71.25 mmol) 1, 8-diamino-3,6-dioxane and 167.73 g of dimethylformamide (DMF), stirred at room temperature for 24 h, then add the polymer solution to the amount ratio of 1:10. A large amount of isopropyl alcohol and n-heptane mixed solution (isopropyl alcohol and n-heptane volume ratio 7: 3), filtered to give a solid polymer, 0.0 ° C in vacuo drying for 3 h, to obtain prepolymer S1, with formula (4) The structure, the weight average molecular weight Mw is 4052, the dispersion coefficient PDI is 1.75.

[0066]

[0067] In the formula (4) 1 With R in equation (1) 1 Define the same.

preparation example 2

[0068] Preparation Example 2: Preparation of an self-crosslinked alicyocyanic acid polymer J1

[0069] The preparation of the prepared preparation example 1 was added 2-hydroxy isobutyrate (HBM) 60 g of the mixture to completely dissolve to obtain a prepolymer solution, and then the prepolymer solution was added to a 500 ml of three flasks, and nitrogen It was heated to 45 ° C, after which 8 g (25.1 mmol) tetramethoxymethylglyol (after dissolved in HBM was solidified to 20%) and 0.48 g of 2.5 mmol), stirred at 45 ° C for 2 h. Then, 0.28 g (2.75 mmol) triethylamine was added to the reaction solution, and then the 180 g of HBM solvent was added to give a polymer solution.

[0070] The above polymer solution is added to the isopropyl alcohol and the n-heptane mixed solution according to the amount ratio of 1:10 (isopropyl alcohol and n-heptane volume ratio 7: 3), and then the solid polymer is filtered, then the solid polymer Press 20% solids in HBM, followed by a volume ratio of 1: 5...

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Abstract

The invention belongs to the field of semiconductor materials, and relates to a self-crosslinkable isocyanurate polymer, an anti-reflection coating composition, and a preparation method and a pattern forming method of the composition. The anti-reflective coating composition contains a self-crosslinkable isocyanurate polymer, an acid generator, an organic solvent and an optional surfactant, wherein the self-crosslinkable isocyanurate polymer has a repeating unit represented by a formula (1). The adopted film-forming substance is an isocyanurate polymer with active sulfydryl and glycoluril groups on a molecular chain at the same time, the isocyanurate polymer with the specific structure has self-crosslinking performance, no extra crosslinking agent needs to be added when the isocyanurate polymer is used as an anti-reflection coating composition subsequently, the coating performance is stable, more importantly, the anti-reflection coating composition obtained by taking the self-crosslinking isocyanurate polymer with the specific structure as a film forming substance is baked and cured at different temperatures, and the obtained anti-reflection coating has stable refractive index n and extinction coefficient k.

Description

Technical field [0001] The present invention belongs to the field of semiconductor materials, and more particularly to an intra-crosslinked isocyanic acid ester polymer and an anti-reflective coating composition and a preparation method thereof and a pattern forming method. Background technique [0002] Photoresist is commonly known as photoresist, is a photosensitive composition, which is used to transfer the image to the substrate. After the coating of the photoresist is formed on the substrate, the photocylose layer is exposed to the activated radiation source via a photomask. After the exposure, a chemical modification reaction occurs on the photoresist layer, and the photomask has light radiation transmission and the non-transmission region, so the pattern of the photomask is transferred to the photolithore resist coating. Thereafter, the photoresist coating is developed to form a patterned image capable of selectively processing on a substrate. [0003] The photoresist is u...

Claims

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Application Information

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IPC IPC(8): C08G73/06G03F7/004C09D179/04G03F7/00G03F7/09
CPCC08G73/0638C08G73/0644C09D179/04G03F7/004G03F7/091G03F7/00Y02E10/50
Inventor 曾成财王静
Owner XIAMEN HENGKUN NEW MATERIAL TECH
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