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Silene-Aurivillius layered structure material Bi4SbO8Cl and synthesis method thereof

A layered structure and microstructure technology, applied in hydrogen/syngas production, chemical instruments and methods, bismuth compounds, etc., can solve the problems of high electron-hole recombination rate, wide band gap, expensive M element, etc.

Active Publication Date: 2022-02-08
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sillen-Aurivillius layered materials that have been successfully synthesized include Bi 4 NbO 8 Cl, Bi 4 TaO 8 Cl etc., wherein—MO x —M elements in the perovskite-like layer include Nb, Ta, V, W, Pb, etc., but these materials mainly have a wide band gap, high electron-hole recombination rate, and the conduction band position does not satisfy H 2 / H + Reduction potential requirements, or expensive M elements, etc., need to be resolved urgently

Method used

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  • Silene-Aurivillius layered structure material Bi4SbO8Cl and synthesis method thereof
  • Silene-Aurivillius layered structure material Bi4SbO8Cl and synthesis method thereof
  • Silene-Aurivillius layered structure material Bi4SbO8Cl and synthesis method thereof

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Experimental program
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Embodiment 1

[0031] SC with high temperature solid phase SB 2 O 4 Further, the photocatalyst Bi is prepared. 4 SBO 8 The process of the Cl is as follows:

[0032] (1) Weigh 2 G SB 2 O 5 Grinding 10 min, then after 950 ° C, 4H high temperature solids to get SB 2 O 4 , X-ray diffraction map figure 2 .

[0033] (2) Putting SB 2 O 4 (0.312 g) and BI 2 O 3 (0.932 g), NH 4 The CL (0.108 g) was taken for 10 min, and the mass furnace was passed through 800 ° C, and the high temperature solid phase was solid.

[0034] (3) The mixture was grinded again through 10 min, and then the final product Bi was obtained by the high temperature solid phase of the muffle furnace and 6 h. 4 SBO 8 CL, its microstructure figure 1 , X-ray diffraction map image 3 . Resulting BI 4 SBO 8 CL's ultraviolet visible light absorption spectrum Figure 4 , Photocatalytic decomposition water hydrogen resistance Figure 5 .

Embodiment 2

[0036] SB SB by hydrothermal method 2 O 4 Further, the photocatalyst Bi is prepared. 4 SBO 8 The process of the Cl is as follows:

[0037] (1) Weigh 0.005 mol SBCL 3 And 0.005 mol of urea was dissolved in 50 ml of water, and pH to 10 was adjusted with ammonia water, and the mixed solution was moved to the reactor, the reaction temperature was 150 ° C, the reaction time was 18 h, and the reaction was completed, and the centrifugation was washed with deionized water. Get SB 2 O 4 , X-ray diffraction map figure 2 .

[0038] (2) Putting SB 2 O 4 (0.312 g) and BI 2 O3 (1.864 g), NH 4 The CL (0.108 g) was taken for 10 min, and the mass furnace was passed through 800 ° C, and the high temperature solid phase was solid.

[0039] (3) The mixture was grinded again through 10 min, and then the final product Bi was obtained by the high temperature solid phase of the muffle furnace and 6 h. 4 SBO 8 CL, its X-ray diffraction map image 3 , Photocatalytic decomposition water hydrogen resistance F...

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Abstract

The invention discloses a Silene-Aurivillius layered structure material Bi4SbO8Cl and a synthesis method of the Silene-Aurivillius layered structure material Bi4SbO8Cl. And the microstructure is -Cl-Bi2O2-SbO4-Bi2O2-Cl-. The synthesis method comprises the following synthesis steps: mixing Sb2O4 and a compound containing Bi and Cl according to a certain proportion, and fully grinding; obtaining the Silene-Aurivillius layered structure material Bi4SbO8Cl further through a high-temperature solid-phase reaction, so that visible light and ultraviolet light with the wavelength smaller than 500 nm can be absorbed, and the position of a conduction band meets the H2 / H + potential requirement. The material can be applied to the fields of dyes, carbon dioxide reduction, hydrogen production by water decomposition, nitrogen fixation and the like.

Description

Technical field [0001] The present invention relates to a layered structure narrow band gap semiconductor material, which belongs to the field of preparation of nanomaterials. Background technique [0002] Sillen-Aurivillius layered structural materials are layered materials for composite cerium oxide, from -bi 2 O 2 - layer and-mo x - Calcanotium titanium mine is superimposed (where M is other metal elements), with excellent photoelectric properties, extensive applications, significant economic and social benefits. Sillen-Aurivillius layered structural materials that have been successfully synthesized have BI 4 NBO 8 CL, BI 4 Tao 8 CL, etc. x - The M elements in the calcium titanium ore include Nb, Ta, V, W, PB, etc. 2 / H + The reduction potential requirements, or the problem of M element is expensive, and it is urgent to solve. Inventive content [0003] SUMMARY OF THE INVENTION It is an object of the present invention to overcome the shortcomings of the above technical probl...

Claims

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Application Information

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IPC IPC(8): C01G29/00C01B3/04B01J27/06
CPCC01G29/006C01B3/042B01J27/06C01P2002/72C01P2002/84C01B2203/1041Y02E60/36
Inventor 房文健杨阳糜炎李小川程宏辉江亚伟
Owner YANGZHOU UNIV