Preparation method for co-growth of multiple single crystal diamonds

A single crystal diamond, co-growth technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of randomness of seed crystal surface temperature, improve the deposition power density and single crystal deposition efficiency, improve the experimental Efficiency, the effect of improving the uniformity of seed temperature

Pending Publication Date: 2022-02-08
HEBEI PLASMA DIAMOND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, due to the uncertainty of the contact thermal resistance between the molybdenum sample holder and the bottom surface of the seed crystal and the surface of the equipment deposition table, the temperature of the seed crystal surface at different positions also has randomness

Method used

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  • Preparation method for co-growth of multiple single crystal diamonds
  • Preparation method for co-growth of multiple single crystal diamonds

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Experimental program
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Effect test

Embodiment 1

[0029]2.45GHz microwave CVD equipment is used to conduct multi-chip growth experiments of 7mm×7mm seed crystal grown diamonds, and the temperature deviation of various crystals is required to be controlled within the range of 1000±15°C. The specific deposition growth process is:

[0030] Take 21 double-sided polished single crystal diamond seed crystals, the seed crystal side length is 7mm×7mm, and the thickness is 0.5±0.1mm. According to the seed crystal size design and processing such as figure 2 A square free-standing molybdenum holder unit is shown. The side length of the molybdenum support unit is 9mm×9mm, the height of the molybdenum support unit is 8-10mm; the side length of the positioning groove 2 is 7.5×7.5mm, and the depth of the positioning groove 2 is 0.4-0.6mm; the upper temperature adjustment groove 3 and the lower The diameter of the temperature regulating groove 4 is 4.5mm, and the depth is 0.3-0.6mm. The processed 21 independent molybdenum holder units su...

Embodiment 2

[0034] Using 2.45GHz microwave CVD equipment to conduct multi-chip growth experiments of 10mm×10mm seed crystal grown diamonds, it is required that the temperature deviation of various crystals be controlled within the range of 1000±15°C. The specific deposition growth process is:

[0035] Take 16 double-sided polished single-crystal diamond seed crystals, the side length of the seed crystal is 10mm×10mm, and the thickness is 0.5±0.1mm. According to the seed crystal size design and processing such as figure 2 A square free-standing molybdenum holder unit is shown. The side length of the molybdenum support unit is 12mm×12mm, the height of the molybdenum support unit is 8-10mm; the side length of the positioning groove 2 is 10.5×10.5mm, and the depth of the positioning groove 2 is 0.4-0.6mm; the upper temperature adjustment groove 3 and the lower The diameter of the temperature regulating groove 4 is 7mm, and the depth is 0.3-0.6mm. Place the processed 16 independent molybde...

Embodiment 3

[0038] 915MHz microwave CVD equipment is used to conduct multi-chip growth experiments of 10mm×10mm seed crystal grown diamonds, and the temperature deviation of various crystals is required to be controlled within the range of 1000±15°C. The specific deposition growth process is:

[0039] Take 60 double-sided polished single-crystal diamond seed crystals, the side length of the seed crystal is 10mm×10mm, and the thickness is 0.5±0.1mm. According to the seed crystal size design and processing such as figure 2 A square free-standing molybdenum holder unit is shown. The side length of the molybdenum support unit is 12mm×12mm, the height of the molybdenum support unit is 8-10mm; the side length of the positioning groove 2 is 10.5×10.5mm, and the depth of the positioning groove 2 is 0.4-0.6mm; the upper temperature adjustment groove 3 and the lower The diameter of the temperature regulating groove 4 is 7mm, and the depth is 0.3-0.6mm. Place the processed 60 independent molybde...

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Abstract

The invention discloses a preparation method for co-growth of a plurality of single crystal diamonds. The method comprises the following steps: designing an independent molybdenum support unit for each seed crystal; placing a plurality of independent molybdenum support units loaded with seed crystals on a water-cooling deposition table of CVD equipment, adjusting the positions of different molybdenum support units on the deposition table according to the surface temperature difference of different seed crystals after startup, and adjusting the combination of different seed crystals and the molybdenum support units at the same time, so that the surface temperature difference of various crystals on the deposition table is within a set range; and for the molybdenum support units exceeding the single crystal growth temperature range, the heat dissipation structures on the upper and lower surfaces of the molybdenum supports are corrected or new molybdenum support units are replaced until the temperatures of the seed crystals carried by all the molybdenum supports on the deposition table are within the set single crystal growth temperature range. The molybdenum support units for bearing the seed crystals are independently arranged and can be randomly combined and exchanged on the water-cooling deposition table, so that the positions of the seed crystals can be exchanged as required, the surface temperatures of a plurality of pieces of seed crystals are consistent, and the flexibility and effectiveness of seed crystal temperature adjustment are realized.

Description

technical field [0001] The invention relates to a preparation method of single crystal diamond, in particular to a preparation method of co-growth of multiple pieces of single crystal diamond. Background technique [0002] Single crystal diamond has excellent comprehensive properties and has broad application prospects in many fields. In recent years, driven by the market demand for ultra-wide bandgap semiconductors and grown diamonds, the preparation technology of large-size high-quality single crystal diamond is developing rapidly and seeking further breakthroughs. Among several methods for artificially preparing large-size single-crystal diamonds, microwave plasma chemical vapor deposition (CVD) technology has become the preferred method for preparing large-size, high-quality single-crystal diamonds due to its non-electrode pollution, high power density, and stable and controllable process. . [0003] The preparation of single crystal diamond by microwave CVD is mainly ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/511C23C16/458C23C16/54C30B25/12C30B29/04
CPCC23C16/511C23C16/4581C23C16/463C23C16/54C30B25/12C30B29/04
Inventor 李义锋姜龙刘晓晨安晓明葛新岗郭辉
Owner HEBEI PLASMA DIAMOND TECH
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