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Preparation method of IGBT (Insulated Gate Bipolar Translator) with self-aligned trench gate structure

A trench gate and self-alignment technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of unsuitable power semiconductor chips, reduce the requirements of lithography precision, improve the area range, and narrow space The effect of the hole current path

Active Publication Date: 2022-02-18
成都森未科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the structure and process are suitable for the production of small-signal integrated circuit chips, but not for power semiconductor chips.

Method used

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  • Preparation method of IGBT (Insulated Gate Bipolar Translator) with self-aligned trench gate structure
  • Preparation method of IGBT (Insulated Gate Bipolar Translator) with self-aligned trench gate structure
  • Preparation method of IGBT (Insulated Gate Bipolar Translator) with self-aligned trench gate structure

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Effect test

Embodiment 1

[0056] A method of preparing an IGBT of a self-aligning groove gate structure, including the following steps:

[0057] Step 1: figure 1 As shown, the second conductive type layer A, and the first conductivity type layer are formed by the ion implantation and diffusion process, and then the first hard mask layer is then deposited;

[0058] Step 2: If figure 2 As shown, the first hard mask layer is etched by a photolithography pattern mask;

[0059] Step three: image 3 As shown, the substrate is etched to form a deep trench, and the thermal growth is formed to form a first insulating dielectric layer;

[0060] Step 4: Figure 4 The first conductive layer is deposited;

[0061] Step 5: Figure 5 As shown, the first conductive layer is etched;

[0062] Step 6: Image 6 The third insulating dielectric layer is deposited.

[0063] Step 7: Figure 7 As shown, the etching third insulating dielectric layer is sealed to the first hard mask; the third insulating dielectric layer acts as a mask i...

Embodiment 2

[0073] A method of preparing an IGBT of a self-aligning groove gate structure, including the following steps:

[0074] Step 1: figure 1 As shown, the second conductive type layer A, and the first conductivity type layer are formed by the ion implantation and diffusion process, and then the first hard mask layer is then deposited;

[0075] Step 2: If figure 2 As shown, the first hard mask layer is etched by a photolithography pattern mask;

[0076] Step three: image 3 As shown, the substrate is etched to form a deep trench, and the thermal growth is formed to form a first insulating dielectric layer;

[0077] Step 4: Figure 4 The first conductive layer is deposited;

[0078] Step 5: Figure 5 As shown, the first conductive layer is etched;

[0079] Step 6: Image 6 The third insulating dielectric layer is deposited.

[0080] Step 7: Figure 7 As shown, the etching third insulating dielectric layer is sealed to the first hard mask; the third insulating dielectric layer acts as a mask i...

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Abstract

The invention relates to the field of semiconductor manufacturing, in particular to a preparation method of an IGBT (Insulated Gate Bipolar Translator) with a self-aligned trench gate structure. The method comprises the following steps of: forming a second conductive type layer a and a first conductive type layer on a substrate, and then depositing a first hard mask layer; etching the first hard mask layer; etching the substrate to form a deep trench, and performing thermal growth to form a first insulating dielectric layer; depositing and etching a first conductive layer; depositing and etching a third insulating dielectric layer until the third insulating dielectric layer is flush with the hard film; removing the first hard mask layer; depositing and etching a second insulating dielectric layer to form a side wall; and etching an emission electrode metal contact hole. According to the invention, after the trench gate is filled, the cap is reversely filled, and preparation of the high-precision electrode contact hole is realized through a self-alignment side wall process and a hard mask process. A continuous self-alignment process method is provided, and a high-density cellular structure is prepared without photoetching through different material attributes and functional attributes of the three insulating dielectric layers, so that the limitation of photoetching is broken through.

Description

Technical field [0001] The present application relates to the semiconductor manufacturing field, particularly a method of preparing the IGBT of the dense groove gate structure. Background technique [0002] The trench gate power semiconductor chip including IGBT is widely used in new energy power generation, transmission, rail transit, industrial control and other fields. In the use scenario, the current demand for single IGBT chips from several amps to hundreds of amps Otual, the corresponding chip area is also from several square millimeters to several hundred square millimeters. Among them, the most widely used in the high-voltage domain is the IGBT device, how to improve the advantages of maintaining IGBT high operating voltages, simple door voltage control, good switch controllability and safety work areas and simple short-circuit protection measures, etc. The current density of IGBT enhances the IGBT conductivity modulation effect, and improves current conduction capabiliti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L21/28H01L21/768
CPCH01L29/66348H01L21/28008H01L21/76897H01L29/7397
Inventor 胡强唐茂森马克强王思亮蒋兴莉
Owner 成都森未科技有限公司
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