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Silicon carbide diode and preparation method thereof

A silicon carbide diode, silicon carbide technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as instability, and achieve the effects of improving uniformity, improving device performance, and high flat top uniformity.

Pending Publication Date: 2022-02-18
北京绿能芯创电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But this patent document still has the defect of the instability factor that conventional high temperature introduces

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  • Silicon carbide diode and preparation method thereof

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Embodiment 1

[0057] Such as figure 1 As shown, this embodiment provides a silicon carbide diode, including a silicon carbide substrate 1, a multi-layer epitaxial layer, a plurality of P-type voltage divider rings 5, a plurality of P-type diffusion regions 6, a Schottky barrier layer 7, Ohmic contact layer 8 , back metal electrode 9 , front metal electrode 10 , silicon dioxide film 11 and polyimide layer 12 . Both the back metal electrode 9 and the silicon carbide substrate 1 are arranged on the ohmic contact layer 8, the ohmic contact layer 8 is located between the back metal electrode 9 and the silicon carbide substrate 1, and the multilayer epitaxial layer 13 is arranged on the silicon carbide substrate 1 , the silicon carbide substrate 1 is located between the multilayer epitaxial layer 13 and the ohmic contact layer 8, and both ends of the multilayer epitaxial layer 13 are provided with a silicon dioxide film 11, and the multilayer epitaxial layer 13 is located between the silicon diox...

Embodiment 2

[0071] Those skilled in the art can understand this embodiment as a more specific description of Embodiment 1.

[0072] Such as figure 1 As shown, this embodiment provides a silicon carbide diode prepared by laser activation and laser ohmic contact and its preparation method, a silicon carbide diode, a silicon carbide substrate 1, a silicon carbide isolation buffer layer 2, a multi-layer epitaxial layer, a multi-layer A P-type voltage divider ring 5, a plurality of P-type diffusion regions 6, a Schottky barrier layer 7, an ohmic contact layer 8, a back metal electrode 9, a front metal electrode 10, a silicon dioxide film 11 and a polyimide layer 12.

[0073] The silicon carbide isolation buffer layer 2 is grown on the silicon carbide substrate 1, and the first epitaxial layer 3 and the second epitaxial layer 4 are grown on the silicon carbide isolation buffer layer 2 (the silicon carbide isolation buffer layer 2, the first epitaxial layer 3, The second epitaxial layer 4 form...

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Abstract

The invention provides a silicon carbide diode and a preparation method thereof. The silicon carbide diode comprises a silicon carbide substrate, a plurality of epitaxial layers, a plurality of P-type voltage dividing rings, a plurality of P-type diffusion regions, a Schottky barrier layer, an ohmic contact layer, a back metal electrode, a front metal electrode, silicon dioxide films and polyimide layers; the back metal electrode and the silicon carbide substrate are arranged on the ohmic contact layer; the plurality of epitaxial layers are arranged on the silicon carbide substrate; the silicon dioxide films are arranged at the two ends of the plurality of epitaxial layers; the polyimide layers are arranged on the silicon dioxide films; two ends of the front metal electrode are arranged on the silicon dioxide films; and the Schottky barrier layer is disposed on the plurality of epitaxial layers. The laser beam with specific energy is generated through the laser equipment and faces the injection doped region, so that selective region activation and independent activation depth control are realized, and lattice repair and ion activation conditions in the injection region are met.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a silicon carbide diode and a method for using the same, in particular to a silicon carbide diode prepared by laser activation and laser ohmic contact and a preparation method thereof. Background technique [0002] SiC (silicon carbide) has three times the forbidden band width of Si, high breakdown field strength (0.8E16~3E16V / cm) is 10 times that of Si, and high thermal conductivity (4.9W / cm K) is about Si 3.2 times, therefore, it is also called wide bandgap semiconductor material, and it is called the third-generation semiconductor material in the industry, which can normally perform device performance in high temperature, high power, and high frequency operating environments. Therefore, the third-generation semiconductor-SIC (silicon carbide) has become an ideal semiconductor material for high-temperature, high-frequency, radiation-resistant and high-power power ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/45H01L29/872H01L21/329H01L21/04H01L21/268H01L21/324
CPCH01L29/872H01L29/6606H01L29/0684H01L21/0455H01L29/45
Inventor 不公告发明人
Owner 北京绿能芯创电子科技有限公司
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