Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Patterned sapphire substrate, preparation method thereof and LED epitaxial wafer

A patterned sapphire and patterned technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problem that the light extraction efficiency is difficult to further improve, and achieve the effects of increasing light scattering, strong operability, and increasing the probability of emission

Pending Publication Date: 2022-02-25
SUNTIFIC MATERIALS WEIFANG LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The first purpose of the present invention is to provide a patterned sapphire substrate to solve the technical problem that the light extraction efficiency in the prior art is difficult to further improve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Patterned sapphire substrate, preparation method thereof and LED epitaxial wafer
  • Patterned sapphire substrate, preparation method thereof and LED epitaxial wafer
  • Patterned sapphire substrate, preparation method thereof and LED epitaxial wafer

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0071] The present invention also provides a method for preparing a patterned sapphire substrate described above, comprising the steps of:

[0072] (a) Coating embossing photoresist on the sapphire flat sheet, using a soft template to carry out an embossing process on the sapphire flat sheet coated with the imprinting photoresist to form a patterned photoresist layer;

[0073] (b) Etching the sapphire flat sheet forming the patterned photoresist layer by an ICP dry etching process to obtain a patterned sapphire substrate;

[0074] Wherein, the pattern of the patterned photoresist layer includes periodically arranged circles and several protruding parts or concave parts arranged periodically along the circumference of the circles along the plan view direction.

[0075] The preparation method of the present invention can obtain a patterned sapphire substrate with regular edges and corners through the design of mask patterns and the like. The presence of edges and corners can fu...

Embodiment 1

[0090] This embodiment provides a method for preparing a patterned sapphire substrate, and the process roadmap and schematic diagram refer to image 3 and Figure 4 , including the following steps:

[0091] (1) Preparation of graphic imprint master

[0092] First, it is formed on the imprinted hard master by electron beam direct writing, such as Figure 5 The target pattern shown is then subjected to dry etching to obtain a patterned imprint master. Wherein, the imprinted hard master is preferably a silicon substrate.

[0093] The target figure includes a circle and 5 fan-like protrusions of the same size arranged periodically along the circumference of the circle (enclosed by arc-shaped edges and circular parts), adjacent to the fan-like The protruding parts are connected end to end in sequence, the radius of the circle is R, the distance from the farthest end of the circular arc in the fan-like shape to the center of the circle is L, and satisfy: L≤1.5R ; Wherein, the n...

Embodiment 2

[0103] This embodiment refers to the preparation method of Example 1, the only difference is that the target pattern is different. Target graphic reference for this example figure 2 (i) in.

[0104] The target graphics are not limited to this, you can also refer to figure 2 The rest of the target graphics.

[0105] The patterned sapphire substrate of the present invention has certain regular edges and corners, which can change the traveling direction of the light emitted by the LED active area, so that more light can meet the emission conditions, thereby improving the light extraction efficiency.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of semiconductor photoetching, and particularly relates to a patterned sapphire substrate, a preparation method thereof and an LED epitaxial wafer. The patterned sapphire substrate comprises a substrate body and a periodic composite structure protruding out of the upper surface of the substrate body. The composite structure comprises a cone and a plurality of microstructures protruding out of or recessed into the conical surface of the cone. The cross sectional area of the microstructure is gradually reduced from the bottom to the top, and the microstructure intersects with the vertex of the cone at the top. The patterned sapphire substrate is provided with regular gully patterns and edges and corners, on one hand, side growth is maximized, mismatch dislocation of epitaxial growth is effectively restrained, on the other hand, the light path of incident light is further changed, light scattering is effectively increased, the emergent probability of the light from the sapphire substrate is increased, and the light extraction efficiency is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor photolithography, in particular to a patterned sapphire substrate, a preparation method thereof, and an LED epitaxial wafer. Background technique [0002] Light extraction efficiency is an important parameter of GaN materials in LEDs. There are currently many methods for improving light extraction efficiency, such as photonic crystals, surface roughening, and patterned substrates. Early research on surface roughening included the simulation of microelement roughening such as hexagonal pyramids, quadrangular pyramids, hemispherical protrusions, hemispherical pits, wedge-shaped, columnar and columnar pits on the surface of n-GaN, or roughening by wet etching. Chloride n-GaN surface, etc. However, the above-mentioned production processes for surface roughening of n-GaN all have the problems of poor product uniformity and poor production operability. [0003] At present, patterned sapphire sub...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22
CPCH01L33/22
Inventor 向容孙逊运孔德媛
Owner SUNTIFIC MATERIALS WEIFANG LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com