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Electrostatic chuck and preparation method thereof

An electrostatic chuck and base technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems that affect the stability of the chip plasma process, reduce the yield of chip products, and particle pollution, and achieve improved chip performance. Product yield, reduction of probability and risk, and improvement of stability

Pending Publication Date: 2022-03-18
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After the bonding layer 13 is etched, it may diffuse to the surface of the wafer 15 to generate particle contamination, thereby affecting the process stability of the chip plasma etching and reducing the yield of the chip product.

Method used

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  • Electrostatic chuck and preparation method thereof
  • Electrostatic chuck and preparation method thereof
  • Electrostatic chuck and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0042] see figure 2, the electrostatic chuck provided in this embodiment includes a base 11, a heating layer 12 arranged on the base 11 for heating the wafer 15, and a heating layer 12 arranged on the heating layer 12 for absorbing the wafer 15. Adsorption layer 14, wherein, the base 11 is usually made of metal materials such as aluminum alloy, optionally, a radio frequency feed-in (not shown) is set in the base 11, which is used for electrical connection with the radio frequency power supply , to be able to feed in RF power. The heating layer 12 includes, for example, a heat insulating plate (or heat insulating layer), a heating plate (or heater) and a heat uniform plate (or heat uniform layer) arranged in sequence from bottom to top. Of course, in practical applications, the heating layer The specific structure of 12 is not limited thereto, as long as the wafer 15 can be heated. The adsorption layer 14 is generally made of insulating materials such as ceramics, and an ads...

no. 2 example

[0064] The electrostatic chuck provided in this embodiment is an improvement made on the basis of the above-mentioned first embodiment, specifically, as Figure 4 As shown, the electrostatic chuck also includes a protection ring 23 made of corrosion-resistant material, the protection ring 23 is arranged on the base 11, and surrounds the seal ring 21, and the protection ring 23 covers the side of the seal ring 21, absorbs The sides of the layer 14 and at least part of the sides of the base 11 . Specifically, the base 11 has a boss, and the protection ring 23 sequentially covers the side of the boss of the base 11 , the side of the sealing ring 21 and the side of the adsorption layer 14 from bottom to top. By means of the above-mentioned protective ring 23 , in combination with the sealing ring 21 , possible particle contamination due to the adhesive layer on the sides of the heating layer 12 can be completely eliminated.

[0065] In some optional embodiments, the corrosion-res...

no. 3 example

[0070] The electrostatic chuck provided in this embodiment is an improvement made on the basis of one of the above-mentioned first and second embodiments, specifically, as Figure 5 As shown, the edge region 111 of the base 11 for carrying the sealing ring 21' is lower than the central region 112 of the base 11 for carrying the heating layer 12.

[0071] The above-mentioned edge area 111 and central area 112 form an annular step, which not only facilitates the installation and positioning of the sealing ring 21', but also increases the axial height relative to the sealing ring 21 in the previous embodiment, and the increase in size is beneficial to Machining and installation of sealing rings.

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Abstract

The invention provides an electrostatic chuck and a preparation method thereof.The electrostatic chuck comprises a base, a heating layer arranged on the base and used for heating a wafer and an adsorption layer arranged on the heating layer and used for adsorbing the wafer, and bonding layers are arranged between the heating layer and the base, between the heating layer and the adsorption layer and on the side face of the heating layer; the heating device is characterized by further comprising a sealing ring made of a corrosion-resistant material, a plurality of through holes penetrating through the inner side face and the outer side face of the sealing ring are formed in the sealing ring, and the sealing ring is arranged on the base, surrounds the periphery of the heating layer and is used for sealing the bonding layer located on the inner side of the sealing ring. According to the electrostatic chuck and the preparation method thereof provided by the invention, the possibility and danger that the bonding layer is polluted by particles generated by etching can be remarkably reduced, so that the stability of a plasma etching process can be improved, and the yield of chip products can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an electrostatic chuck and a preparation method thereof. Background technique [0002] With the rapid innovation and development of modern chip processing technology, chip production capacity continues to increase, while the structure size continues to decrease, which makes it necessary to strictly control the particle contamination falling on the wafer during the plasma etching process of the chip. Because tiny particles larger than, for example, 5 nanometers may cause short-circuit connections between different etched trenches or holes, resulting in chip units on the wafer being unusable and scrapped, thereby reducing the yield of products. [0003] figure 1 It is a structural schematic diagram of an existing electrostatic chuck. see figure 1 , the existing electrostatic chuck includes a base 11 and a heating layer 12 and an adsorption layer 14 arranged sequentiall...

Claims

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Application Information

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IPC IPC(8): H01L21/683
CPCH01L21/6831H01L21/6833
Inventor 贺小明
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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