Film layer, bipolar plate and preparation method
A bipolar plate, titanium alloy bipolar plate technology, applied in coating, metal material coating process, ion implantation plating and other directions, can solve problems such as pitting corrosion on the surface of titanium alloy bipolar plate, so as to delay the surface pitting corrosion , It is not easy to penetrate, and the effect of prolonging the service life
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0048] The application also provides a method for preparing a bipolar plate, comprising the steps of:
[0049] S1. Pretreatment: Clean oxides and impurities on the surface of the titanium alloy substrate 5 by using ion beam etching technology, and set aside. Specifically, the titanium alloy substrate is first cleaned and dried with an ultrasonic cleaning line, placed in an unbalanced closed-field magnetron sputtering coating furnace chamber, and vacuumed to 4×10 -5 mBar, turn on the ion source, pass in 1000 sccm Ar gas to generate Ar ions, apply a 200V bias voltage to the titanium alloy substrate 5, etch for 20 minutes, and remove the oxide insulating layer on the surface of the titanium alloy substrate 5 . The purpose of the pretreatment is to improve the electrical conductivity of the titanium alloy substrate 5 and the ability to combine with the layered structure.
[0050] S2. Deposited film layer 100: place the pretreated titanium alloy substrate 5 in an unbalanced closed...
Embodiment 1
[0063] The TC4 titanium alloy substrate was cleaned with an ultrasonic cleaning line, dried, and placed in an unbalanced closed-field magnetron sputtering coating furnace chamber. Vacuum down to 4×10 -5 mBar, turn on the ion source, pass in 1000 sccm Ar gas to generate Ar ions, apply a 200V bias voltage to the TC4 titanium alloy substrate, etch for 20min, and remove the oxide insulating layer on the surface of the TC4 titanium alloy substrate. Using Ar gas to adjust the pressure in the unbalanced closed-field magnetron sputtering coating chamber to 3×10 -3 mBar, turn on the Ti target, sputtering power is 10KW, titanium alloy substrate bias is 100V, sputter deposit a 0.1μm thick pure Ti layer, turn off the Ti target; feed 200sccm nitrogen, turn on the Ti 0.75 Si 0.25 For the target material, the sputtering power is 10KW, the bias voltage of the titanium alloy substrate is 50V, and a TiSiN layer 3 with a thickness of 1.0 μm is deposited; the graphite target is turned on, and t...
Embodiment 2
[0065] The TC4 titanium alloy substrate was cleaned with an ultrasonic cleaning line, dried, and placed in an unbalanced closed-field magnetron sputtering coating furnace chamber. Vacuum down to 4×10 -5 mBar, turn on the ion source, pass in 1000 sccm Ar gas to generate Ar ions, apply a 200V bias voltage to the TC4 titanium alloy substrate, etch for 20min, and remove the oxide insulating layer on the surface of the TC4 titanium alloy substrate. Using Ar gas to adjust the pressure in the unbalanced closed-field magnetron sputtering coating chamber to 3×10 -3 mBar, open the sputtering Ti target, the sputtering power is 10KW, the bias voltage of the titanium alloy substrate is 100V, and a 0.2μm thick pure Ti layer is deposited; 200sccm nitrogen gas is introduced, and the Si target is opened at the same time. The power ratio of the Ti target and the Si target is 10:3, titanium alloy substrate bias 50V, deposit 1.0μm thick TiSiN coating; turn on the graphite target, sputter and dep...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 


