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Film layer, bipolar plate and preparation method

A bipolar plate, titanium alloy bipolar plate technology, applied in coating, metal material coating process, ion implantation plating and other directions, can solve problems such as pitting corrosion on the surface of titanium alloy bipolar plate, so as to delay the surface pitting corrosion , It is not easy to penetrate, and the effect of prolonging the service life

Pending Publication Date: 2022-03-22
ARISON SURFACE TECH SUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is mainly to solve the technical problem that the surface of the current titanium alloy bipolar plate is prone to pitting corrosion

Method used

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  • Film layer, bipolar plate and preparation method
  • Film layer, bipolar plate and preparation method
  • Film layer, bipolar plate and preparation method

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preparation example Construction

[0048] The application also provides a method for preparing a bipolar plate, comprising the steps of:

[0049] S1. Pretreatment: Clean oxides and impurities on the surface of the titanium alloy substrate 5 by using ion beam etching technology, and set aside. Specifically, the titanium alloy substrate is first cleaned and dried with an ultrasonic cleaning line, placed in an unbalanced closed-field magnetron sputtering coating furnace chamber, and vacuumed to 4×10 -5 mBar, turn on the ion source, pass in 1000 sccm Ar gas to generate Ar ions, apply a 200V bias voltage to the titanium alloy substrate 5, etch for 20 minutes, and remove the oxide insulating layer on the surface of the titanium alloy substrate 5 . The purpose of the pretreatment is to improve the electrical conductivity of the titanium alloy substrate 5 and the ability to combine with the layered structure.

[0050] S2. Deposited film layer 100: place the pretreated titanium alloy substrate 5 in an unbalanced closed...

Embodiment 1

[0063] The TC4 titanium alloy substrate was cleaned with an ultrasonic cleaning line, dried, and placed in an unbalanced closed-field magnetron sputtering coating furnace chamber. Vacuum down to 4×10 -5 mBar, turn on the ion source, pass in 1000 sccm Ar gas to generate Ar ions, apply a 200V bias voltage to the TC4 titanium alloy substrate, etch for 20min, and remove the oxide insulating layer on the surface of the TC4 titanium alloy substrate. Using Ar gas to adjust the pressure in the unbalanced closed-field magnetron sputtering coating chamber to 3×10 -3 mBar, turn on the Ti target, sputtering power is 10KW, titanium alloy substrate bias is 100V, sputter deposit a 0.1μm thick pure Ti layer, turn off the Ti target; feed 200sccm nitrogen, turn on the Ti 0.75 Si 0.25 For the target material, the sputtering power is 10KW, the bias voltage of the titanium alloy substrate is 50V, and a TiSiN layer 3 with a thickness of 1.0 μm is deposited; the graphite target is turned on, and t...

Embodiment 2

[0065] The TC4 titanium alloy substrate was cleaned with an ultrasonic cleaning line, dried, and placed in an unbalanced closed-field magnetron sputtering coating furnace chamber. Vacuum down to 4×10 -5 mBar, turn on the ion source, pass in 1000 sccm Ar gas to generate Ar ions, apply a 200V bias voltage to the TC4 titanium alloy substrate, etch for 20min, and remove the oxide insulating layer on the surface of the TC4 titanium alloy substrate. Using Ar gas to adjust the pressure in the unbalanced closed-field magnetron sputtering coating chamber to 3×10 -3 mBar, open the sputtering Ti target, the sputtering power is 10KW, the bias voltage of the titanium alloy substrate is 100V, and a 0.2μm thick pure Ti layer is deposited; 200sccm nitrogen gas is introduced, and the Si target is opened at the same time. The power ratio of the Ti target and the Si target is 10:3, titanium alloy substrate bias 50V, deposit 1.0μm thick TiSiN coating; turn on the graphite target, sputter and dep...

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Abstract

The invention relates to a film layer. The film layer comprises a Ti bonding layer, a TiSiN layer, a TiSiN / graphite transition layer and a graphite layer which are sequentially arranged upwards from the surface of a titanium alloy substrate. Si3N4 of an amorphous structure is formed in the TiSiN layer through a specific process, a certain wrapping effect can be formed on TiN crystal grains, the effect of refining the TiN crystal grains is achieved, finally, the TiSiN layer is of a fine grain crystal structure, crystal gaps are reduced, pinhole defects of the whole film layer are reduced due to the arrangement of the fine grain crystal structure layer, and the film layer is more uniform in thickness. And meanwhile, due to the structural design of the Ti binding layer and the TiSiN / graphite transition layer, the film-substrate binding force between the film layer and the titanium alloy substrate and the film-substrate binding force between plating layers of the film layer are greatly improved. The titanium alloy bipolar plate modified by the film layer has the characteristics of excellent conductivity, corrosion resistance, low through-hole rate and the like, a corrosive medium is not easy to penetrate through the titanium alloy bipolar plate, and the pitting phenomenon on the surface of the titanium alloy bipolar plate is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of fuel cells, in particular to a membrane layer applied to a bipolar plate of a fuel cell, a bipolar plate and a preparation method. Background technique [0002] Titanium alloy has the characteristics of high specific strength and easy processing, and has become an ideal material for the preparation of metal bipolar plates. However, the conductivity and durability of titanium alloy bipolar plates are affected by the surface morphology and structure. In harsh working environments, titanium alloy bipolar plates are prone to surface corrosion and produce passivation films, which change the bipolar The surface morphology of the plate and the diffusion layer leads to an increase in the interface contact resistance, which will reduce the output power, and the interface contact resistance increases with the increase of the passivation film thickness. Moreover, in addition to being prone to corrosion and passivat...

Claims

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Application Information

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IPC IPC(8): H01M8/0228H01M8/0213H01M8/0206H01M8/0208C23C14/02C23C14/06C23C14/35
CPCH01M8/0228H01M8/0213H01M8/0206H01M8/0208C23C14/025C23C14/0641C23C14/0605C23C14/352Y02E60/50
Inventor 毛昌海祖全先帅小锋
Owner ARISON SURFACE TECH SUZHOU