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Manufacturing process of PERC battery piece

A production process and cell technology, applied in the field of PERC cell production technology, can solve problems such as unfavorable cell production, unfavorable cell optical absorption, and reduced cell conversion efficiency.

Pending Publication Date: 2022-03-29
TONGWEI SOLAR ENERGY CHENGDU CO LID
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the thinning of the silicon wafer, it is not conducive to the optical absorption of the cell, and the proportion of debris will increase during the production process, which is not conducive to the production of the cell
In the PERC battery manufacturing process, the thickness of the silicon wafer has an absolute impact on the performance of the battery. The thinning of the silicon wafer will reduce the optical absorption capacity of the battery. conversion efficiency; and the thinned silicon wafers are more fragile. In the production process, especially in processes such as laser grooving that will damage the silicon wafers, the proportion of fragments will increase, which is not conducive to production costs. control

Method used

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  • Manufacturing process of PERC battery piece
  • Manufacturing process of PERC battery piece
  • Manufacturing process of PERC battery piece

Examples

Experimental program
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Effect test

Embodiment 1

[0047] The embodiment of this application provides a PERC solar cell, which uses a single crystal P-type silicon wafer with a thickness of 170 μm as the silicon substrate, and is manufactured according to the following process:

[0048] (1) Texturing: Clean the P-type silicon wafer, and at the same time use KOH to perform texturing on the front side of the P-type silicon wafer to form a pyramid textured surface with a height of 2 μm.

[0049] (2) Diffusion: The P-type silicon wafer after texturing is placed in a diffusion furnace, and diffused for 40 minutes at a diffusion temperature of 800 ° C, so that phosphorus oxychloride is deposited on the front side of the P-type silicon wafer and thermally diffused. A phosphorus-doped N+ emitter junction layer with a thickness of 0.3 μm is obtained to form a PN junction.

[0050] (3) SE laser doping: the selective emitter is on the lightly doped P-type silicon wafer, and the doping and diffusion of the local area is carried out on the...

Embodiment 2

[0060] This embodiment provides a PERC solar cell, which uses a single crystal P-type silicon wafer with a thickness of 160 μm as a silicon substrate, and the rest of the manufacturing process is the same as that of Embodiment 1.

Embodiment 3

[0062] This embodiment provides a PERC solar cell, which uses a single crystal P-type silicon wafer with a thickness of 150 μm as a silicon substrate, and the rest of the manufacturing process is the same as that of Embodiment 1.

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Abstract

The embodiment of the invention provides a manufacturing process of a PERC battery piece, and relates to the technical field of photovoltaic product preparation. The manufacturing process of the PERC battery piece comprises the steps of texturing, diffusion, SE laser doping, thermal oxidation, polishing, annealing, back surface coating, front surface coating, laser grooving, screen printing and sintering which are sequentially carried out on a P-type silicon wafer, during thermal oxidation, nitrogen and oxygen carrying a phosphorus source are firstly introduced for thermal treatment, and then nitrogen and oxygen are introduced for oxidation; and during SE laser doping and laser grooving, light spots generated by laser processing are controlled to be arranged at intervals, and the distance between every two adjacent light spots ranges from 15 micrometers to 30 micrometers. The manufacturing process of the PERC battery piece is particularly suitable for manufacturing a thin-sheet battery, the conversion efficiency of the thin-sheet battery is guaranteed, and meanwhile the proportion of defective fragments is reduced.

Description

technical field [0001] The present application relates to the technical field of photovoltaic product preparation, and in particular, to a manufacturing process of PERC cells. Background technique [0002] At present, with the vigorous development of the photovoltaic industry, each module of the industrial chain reduces the cost according to its own situation, so as to bring more profits. Among them, PERC cells (Passivated Emitter and Rear Cell) are obtained due to their high conversion efficiency. Due to widespread concern in the industry, the demand for silicon wafers in PERC cell manufacturing continues to increase. [0003] In order to reduce the cost of photovoltaic products, silicon wafer thinning is an inevitable trend. However, as the silicon wafer becomes thinner, it is not conducive to the optical absorption of the cell, and the proportion of debris will increase during the production process, which is not conducive to the production of the cell. In the PERC batt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/1804H01L31/186H01L31/068Y02E10/547Y02P70/50
Inventor 戴睿哲郑清吉王玉浩高柳眭山芮亚豪
Owner TONGWEI SOLAR ENERGY CHENGDU CO LID
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