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Preparation method of photoresist resin monomer containing hydroxyl structure

A technology of resin monomer and structured light, applied in the field of photoresist, can solve the problem of low preparation purity, and achieve the effects of high purity, high yield and simple post-processing

Pending Publication Date: 2022-04-08
XUZHOU B&C CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The purity of the existing hydroxyl-containing structure photoresist resin monomers is relatively low

Method used

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  • Preparation method of photoresist resin monomer containing hydroxyl structure
  • Preparation method of photoresist resin monomer containing hydroxyl structure
  • Preparation method of photoresist resin monomer containing hydroxyl structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] first step

[0045] Reaction equation:

[0046]

[0047] Material ratio

[0048]

[0049] Operation process:

[0050] Under nitrogen protection, sodium methacrylate (108.1g, 1mol), epichlorohydrin (541g, 5.85mol), triethylbenzyl ammonium chloride (1.9g, 0.01mol), potassium iodide (1.7g, 0.01mol) ), phenothiazine (2.0g) were added into a 1L four-necked reaction flask, the stirring was started, the temperature was raised to 110°C, and the reaction was continued at 110-120°C for 6 hours.

[0051] After the reaction was completed, the temperature was lowered to 20-30° C., and the solids were removed by filtration. After the filtrate decompressed to recover epichlorohydrin, the distillation was continued to obtain 86.7 g of colorless liquid glycidol methacrylate (purity GC=97.1%, yield Rate y = 61%)

[0052] In this example, sodium methacrylate is directly used for the reaction. Compared with methacrylic acid+alkali, the reactivity is better, the aftertreatment is si...

Embodiment 2

[0063] first step:

[0064] operation process

[0065] Under nitrogen protection, sodium methacrylate (108.1g, 1mol), epichlorohydrin (541g, 5.85mol), tetrabutylammonium bromide (3.36g, 0.01mol), potassium iodide (1.7g, 0.01mol), Phenothiazine (2.0 g) was added into a 1 L four-necked reaction flask, stirring was started, the temperature was raised to 120°C, and the reaction was continued at 110-120°C for 10 hours.

[0066] After the reaction was completed, the temperature was lowered to 20-30° C., the solids were removed by filtration, and the filtrate was decompressed to recover epichlorohydrin, and then continued to distill to obtain 85.8 g of colorless liquid glycidol methacrylate (purity GC=97.3%, yield rate y = 60.4%)

[0067] Step two:

[0068] Operation process:

[0069] Under nitrogen protection, glycidyl methacrylate (71.1g, 0.5mol), dioxane (300g), N,N-dimethylethylenediamine (0.44g, 0.005mol), antioxidant Add 264 (0.7g) into a 1L four-necked reaction flask, sta...

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Abstract

The invention relates to a preparation method of a photoresist resin monomer containing a hydroxyl structure. The preparation method comprises the following synthetic route: R1 and R2 are respectively and independently selected from hydrogen atoms or C1-C6 alkyl groups; the preparation method comprises the following steps: a) mixing a compound as shown in a formula III, epoxy chloropropane, a first catalyst, a second catalyst and a polymerization inhibitor, stirring, heating, reacting and purifying to obtain a compound as shown in a formula II; and b) dissolving the compound in the formula II, organic alkali and a polymerization inhibitor in an organic solvent, then adding alkyl acrylic acid, reacting and purifying to obtain the compound in the formula I. According to the method, the alkyl sodium acrylate compound is directly used, compared with the combination of alkyl methacrylic acid and alkali, the reaction activity is better, post-treatment is simple, epichlorohydrin is easy to recover, by-products are easy to remove in post-treatment, the method is more suitable for industrial production, and the obtained product is high in purity and high in yield.

Description

technical field [0001] The invention relates to the technical field of photoresist, in particular to a preparation method of a photoresist resin monomer containing a hydroxyl group structure. Background technique [0002] Chemically amplified photoresist is a photoresist based on the principle of chemical amplification, and its main components are polymer resin, photo acid generator (photo acid generator, PAG), and corresponding additives (additives) and solvents. Among them, the polymer resin is formed by the copolymerization of resin monomers with different side chain structures. The side chain structure is the key component that endows the polymer resin with the required functions, and usually provides polar groups and acid-sensitive groups for the polymer resin. group. Polar groups can balance the hydrophilicity and hydrophobicity of the resin, improve the adhesion between the resin and the substrate, and provide developability for the host resin. The acid-sensitive gr...

Claims

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Application Information

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IPC IPC(8): C07C67/26C07C69/54
Inventor 傅志伟潘新刚余文卿薛富奎刘司飞邵严亮
Owner XUZHOU B&C CHEM CO LTD
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