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SnSe nanorod array heterojunction device with room-temperature ultrafast infrared response and preparation method of SnSe nanorod array heterojunction device

A nanorod array and infrared response technology, which is applied in nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve problems such as the inability to realize photoelectric detection in the infrared band, and achieve high yield and simple process method , The effect of low manufacturing cost

Pending Publication Date: 2022-04-08
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, the optoelectronic devices disclosed above can only have a photoresponse function to visible light, and cannot realize photoelectric detection in the infrared band range.

Method used

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  • SnSe nanorod array heterojunction device with room-temperature ultrafast infrared response and preparation method of SnSe nanorod array heterojunction device
  • SnSe nanorod array heterojunction device with room-temperature ultrafast infrared response and preparation method of SnSe nanorod array heterojunction device
  • SnSe nanorod array heterojunction device with room-temperature ultrafast infrared response and preparation method of SnSe nanorod array heterojunction device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0075] (1) Select double-sided polished single crystal Si semiconductor substrate;

[0076] (2) Ultrasonic cleaning in alcohol, acetone and deionized water for 180 s in sequence. After taking it out, dry it with dry nitrogen;

[0077] (3) Load the cleaned Si substrate into a tray and put it into a vacuum chamber;

[0078] (4) Use a vacuum pump to pump the vacuum of the vacuum chamber to 3×10 -4 Pa, maintaining the temperature of the Si substrate at the first temperature of 20°C;

[0079] (5) Adjust the working argon gas pressure to 0.5 Pa, and use the DC magnetron sputtering method to bombard the metal Al target with ionized argon ions. Deposit a layer of metal Al layer as the lower electrode layer;

[0080] (6) The above-mentioned substrate deposited with the Al electrode layer is loaded into the tray, and the surface of the substrate without the metal layer is outward, and put into the vacuum chamber again;

[0081] (7) Pump the vacuum chamber to 5×10 -4 Pa, adjust the...

Embodiment 2

[0086] In Example 1, the second temperature of the substrate is set to 100°C;

[0087] All the other are the same as in Example 1.

[0088] After testing, the prepared SnSe heterojunction device has a weak response to infrared light with a wavelength of 1550nm: the responsivity is 0.3V / W, and the response time is 203μs.

Embodiment 3

[0090] In Example 1, the second temperature of the substrate is set to 200°C;

[0091] All the other are the same as in Example 1.

[0092] After testing, the prepared SnSe heterojunction device has a weak response to infrared light with a wavelength of 1550nm: the responsivity is 1.8V / W, and the response time is 158μs.

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Abstract

The invention discloses a SnSe nanorod array heterojunction device with room-temperature ultrafast infrared response and a preparation method of the SnSe nanorod array heterojunction device. The method comprises the following steps: selecting a double-sided polished single crystal Si substrate; depositing a SnSe nanorod array thin film layer on the upper surface of the substrate by using a magnetron sputtering technology; depositing a transparent electrode layer on the surface of the film layer and depositing a metal electrode layer on the lower surface of the substrate. Based on the light-heat-electricity conversion principle of enhanced heterogeneous interfaces in the device, the device has obvious response performance to infrared light under the room temperature condition, and the response speed of the device is ultra-high. The infrared photoelectric detector has the advantages of being low in energy consumption, high in infrared responsivity and infrared detection rate, high in performance stability and the like. The preparation process is simple, high in yield, non-toxic, pollution-free and suitable for large-scale industrial production.

Description

technical field [0001] The invention relates to a heterojunction device and a preparation method thereof, in particular to a SnSe nanorod array heterojunction photodetection device and a preparation method thereof, belonging to the field of semiconductor optoelectronic devices. Background technique [0002] In recent years, with the development of infrared imaging technology, the development of photodetector devices with infrared response under uncooled conditions has attracted extensive attention from many researchers at home and abroad. The main reason is that infrared light signals can be detected at room temperature. The identification and monitoring of the device can effectively avoid complex cooling devices, significantly increase the pixel unit and integration density of the device, and greatly enhance the resolution and accuracy of infrared imaging. [0003] In the prior art, uncooled infrared photodetection devices mainly use heat-sensitive semiconductor materials s...

Claims

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Application Information

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IPC IPC(8): H01L31/109H01L31/18B82Y30/00B82Y40/00C23C14/06C23C14/08C23C14/16C23C14/35
CPCY02P70/50
Inventor 郝兰众刘英明武玉鹏赵世荣刘冠初韩治德刘云杰
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)