Cavity type piezoelectric single crystal acoustic resonator and preparation method thereof

A piezoelectric single crystal and acoustic wave resonator technology, applied in the direction of electrical components, impedance networks, etc., can solve problems such as limitations, incompatibility, and etching process difficulties, and achieve the effects of avoiding crystal defects, stable mechanical properties, and reducing the difficulty of preparation

Pending Publication Date: 2022-04-08
苏州达波新材科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the chemical properties of piezoelectric single crystals such as lithium tantalate and lithium niobate are stable, which makes their etching process difficult. At the same time, it is difficult to be compatible with the complementary metal oxide semiconductor (CMOS) process in the current semiconductor field, which limits their advantages. to play

Method used

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  • Cavity type piezoelectric single crystal acoustic resonator and preparation method thereof
  • Cavity type piezoelectric single crystal acoustic resonator and preparation method thereof
  • Cavity type piezoelectric single crystal acoustic resonator and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0071] Example 1 see figure 1 A cavity-type piezoelectric single crystal acoustic resonator provided in this embodiment includes a wafer substrate 1 (ie, a wafer-level substrate, referred to as the substrate hereinafter) and a piezoelectric single crystal thin film 2 . The lower end surface (defined as the first surface) of the piezoelectric single crystal thin film is provided with a lower electrode film 4 (defined as the first electrode), and the upper end surface is provided with an upper electrode film 5 (defined as the second electrode). The lower end face of the piezoelectric single crystal thin film is bonded to the substrate surface, and the substrate surface forms exhaust channels 7 and air cavities 6 that cross each other vertically and horizontally. The air cavity 6 is located at the intersection node of the exhaust channels 7, and The exhaust channels 7 communicate with each other, the lower electrode film 4 is arranged in the corresponding air cavity 6, and the ex...

Embodiment 2

[0085] Embodiment 2 The structure of a cavity-type piezoelectric single crystal acoustic resonator provided in this embodiment is similar to that of Embodiment 1, except that a buffer layer 8 is formed on the substrate.

[0086] The preparation method of a cavity-type piezoelectric single crystal acoustic resonator in this embodiment is also similar to that of Embodiment 1, specifically including the following steps:

[0087] (1) Please refer to Figure 7, Obtain a 4-inch high-resistance (100) silicon wafer with a thickness of 500 μm, sequentially undergo ultrasonic cleaning with acetone, alcohol, deionized water, and alcohol, and then dry it with a nitrogen gun. A silicon dioxide layer was prepared as a buffer layer with a thickness of 300 nm by using a plasma enhanced chemical vapor deposition method. Using photolithography and etching technology to form a patterned wafer substrate, the specific steps are: first, perform photolithography process, including baking, coating a...

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Abstract

The invention discloses a cavity type piezoelectric single crystal acoustic resonator and a preparation method thereof. The cavity type piezoelectric single crystal acoustic resonator comprises a substrate and a piezoelectric single crystal film, the piezoelectric single crystal film is provided with a first surface and a second surface which are opposite to each other, the first surface and the second surface are respectively provided with a first electrode and a second electrode, the first surface is combined with the surface of the substrate, and the second surface is combined with the surface of the substrate. Air cavities and exhaust channels which are communicated with each other are formed in the surface of the substrate, the first electrodes are arranged in the corresponding air cavities, and the exhaust channels are communicated with openings formed in the surfaces of the acoustic resonators. Compared with the prior art, the method has the advantages that the piezoelectric single crystal film with stable chemical properties is prevented from being directly etched, the preparation difficulty of the cavity type piezoelectric single crystal acoustic resonator is reduced, meanwhile, the exhaust channel is arranged to assist the bonding process, the bubble defect in the bonding process can be reduced, and the practicability is very high.

Description

technical field [0001] The invention relates to an acoustic wave resonator, in particular to a cavity type piezoelectric single crystal acoustic wave resonator and a preparation method thereof, belonging to the field of electronic information materials. Background technique [0002] With the rapid development of wireless communication technology, the world is ushering in the 5G era. Traditional communication devices with single functions and large volumes have been gradually eliminated and replaced by new communication products with small size, full functions and stable performance. As the core component of the RF front-end, the filter is also evolving towards high frequency, large bandwidth, and high power tolerance. With its high quality factor (Q) and easy access to frequencies above 2.5 GHz, bulk acoustic wave filters gradually compete with traditional surface acoustic wave filters and become the best solution for frequency control in the field of high-frequency informat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/17
Inventor 潘峰
Owner 苏州达波新材科技有限公司
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