Preparation method of Co3O4/WO3/BiVO4 photo-anode

A photoanode and muffle furnace technology, applied in the direction of electrodes, electrolysis process, electrolysis components, etc., can solve the problems of weak surface kinetics, poor catalytic oxidation water cracking ability, high recombination rate of photogenerated carriers, etc., to achieve high efficiency Effects of water oxidation reaction, improvement of catalytic activity, enhancement of photoelectric stability

Active Publication Date: 2022-04-12
LIAONING UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, BiVO 4 The semiconductor itself has limitations such as high recombination rate of photogenerated carriers, weak surface kinetics, and poor ability to catalyze oxidized water splitting, which makes it of little research value as a photoanode cell alone.

Method used

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  • Preparation method of Co3O4/WO3/BiVO4 photo-anode
  • Preparation method of Co3O4/WO3/BiVO4 photo-anode
  • Preparation method of Co3O4/WO3/BiVO4 photo-anode

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Embodiment 1

[0025] Example 1 One CO 3 O 4 / Wo 3 / BIVO 4 Preparation of light anode

[0026] 1) 9.963G Ki and 2.916G Bi (NO 3 ) 3 · 5h 2 O Slowly poured into 150 ml of pH = 1.7 nitric acid solution, stirred vigorously until completely dissolved until it gradually became an orange red solution, and 1.491 g was dissolved in 60 ml of benzoquinone in 60 ml of anhydrous ethanol, then mixed with orange red solution Ultrasound until the solution becomes dark red, that is, plating solution;

[0027] 2) Connect the electrochemical workstation CHI 660, the electroplated liquid surface of 1 cm × 2 cm FTO length is performed in the electroplated liquid surface as the working electrode, and the PT wire is the counter electrode, and the Ag / AGCL is the reference electrode, three The electrode system is -0.1vvs.ag / AGCl as input voltage, 300 seconds, made of thin and uniform BiOi glass sheet, weighing 0.106 g of acetylacetonate vanadium is dissolved in 1.0 ml of DMSO, mixed with mixing, 20.0 μl uniform dro...

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Abstract

The invention relates to a preparation method of a Co3O4/WO3/BiVO4 photo-anode. Comprising the following steps: firstly, dissolving KI and Bi (NO3) 3.5 H2O in a nitric acid solution, mixing with a p-benzoquinone ethanol solution to form an electroplating solution, immersing half of FTO into the electroplating solution, electroplating to prepare a BiOI glass plate, dropwise coating vanadyl acetylacetonate, heating at a high temperature to prepare a BiVO4 photo-anode, then immobilizing powdery WO3 onto the BiVO4 photo-anode by a high-temperature calcination method to prepare a WO3/BiVO4 photo-anode, and finally preparing the WO3/BiVO4 photo-anode. And finally, soaking the WO3/BiVO4 photo-anode in a reaction solution of Co (NO3) 3.6 H2O and urea, and heating at a high temperature to prepare the Co3O4/WO3/BiVO4 photo-anode. The Co3O4/WO3/BiVO4 photo-anode prepared by the preparation method disclosed by the invention has very excellent light stability and catalytic activity of photoelectrocatalytic cracking of water.

Description

Technical field [0001] The present invention belongs to the field of photode-element preparation, and it is specifically involved in a CO. 3 O 4 / Wo 3 / BIVO 4 The preparation method of the male anode. Background technique [0002] It is an effective means to solve energy crisis issues with solar light driving decomposition. Bismuth (Bivo) 4 ) There are many advantages, such as narrow band gaps, low production costs, non-toxic, high-gloss stability, etc., have a large application future in the field of photocatalytic. However, BIVO 4 The repetition rate of the semiconductor itself is large, the surface dynamics is weak, and the catalytic oxidation of hydraulic solution is poor, resulting in a limited value of the photode battery in the photode battery. Therefore, with BIVO 4 The semiconductor is a substrate, and a certain amount of modification is prepared, and the composite electrode is an effective strategy, and the powder-shaped trihydrate (WO) by high temperature calcination...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/04C25B1/04C25B1/55
CPCY02E60/36
Inventor 夏立新金磊姜毅
Owner LIAONING UNIVERSITY
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